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The MOSFET will be symmetrical #so just model out to 0.1um so final transistor will be placed in the middl e #of a 0.2um mesh in x direction. Deposit an oxide on the silicon surface for implanting to prevent channeling deposit oxide thick=0.05 #nwell formation for the body of the pmos transistor. The shallowest implant #will define the threshold voltage so vary to get desired threshold.
The MOSFET will be symmetrical #so just model out to 0.1um so final transistor will be placed in the middl e #of a 0.2um mesh in x direction. Deposit an oxide on the silicon surface for impl…