04 Seebacher MOS-AK Helsinki

HV MOSFET Modeling with HiSIM_HV
Benchmarks and New Developments

Ehrenfried Seebacher, Mitiko Muira Matausch, Kund Molnar
2011-09-16
Hiroshima University
2011 austriamicrosystems
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

2
HV Transistor
Compact Modeling Requirements
HV transistor sub-circuit modeling (the reference)
State of the art HV Transistor Compact Models
HiSIM_HV 1.x and 2.x
Benchmarking: DC, AC
Summary
Presentation Overview
Hiroshima University &
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

FOMs for HV Transistor Modeling

RON (On Resistor) (high vgs, low vds, and temp.)
IDSAT (Saturation Current) ?
VT long & short
Cgg & Cgd Miller Cap
Analog parameter for long channel length
RF Parameter FT, FMAX ?

3
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

HV CMOS Transistor Types
4
Small on-resistance and high BV are contrary effects.
The optimization of the tradeoff between
both quantities is of major interest.
The gate length is extended beyond the body-drain
well junction, which increases the junction BV.
The gate acts as a field plate to bends the electric field.
RESURFeffect
Quasi-Saturation Effect.
Increased junction breakdown voltage (BV)
of the drain diffusion is achieved
by using a deep drain well
PWELL
PWELL
NWELL
Nwell
Nwell
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Sub-circuit Modeling
5
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Sub-circuit Model Features and Limitations
HV MOS Transistor Model Features:
Basic geometrical and process-related aspects
such as oxide thickness, junction depth, effective
channel length and width
RON modeling
Quasi saturation region and the saturation
region
Geometry scaling, Short-channel effects
1/f and thermal noise equation
Temperature Modeling for RON, VT, IDSAT
High Voltage Parasitic Models
Bulk (Substrate) current
Effects of doping profiles, substrate effect
Modeling of weak, moderate and strong
inversion behavior
Parasitic bipolar junction transistor (BJT).

Model Limitations:
RF modeling
SH modeling
Cgd, Cgg
Graded channel
Impact ionization in the drift region
High-side switch (sub-circuit extension needed).

6
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

State of the Art HV Compact Models and new Developments
EKV HV Transistor
Under development within the EU Project COMON
A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET Antonios Bazigos, Franois Krummenacher, Jean-Michel
Sallese, Matthias Bucher, Ehrenfried Seebacher, Werner Posch, Kund Molnr, and Mingchun Tang
PSP HV Transistor Model
In development based on PSP surface potential model
MM20
asymmetrical, surface-potential-based LDMOS model, developed by
NXP Research
HiSIM_HV
CMC Standard model version 1.1.2 and 1.2.1
Version 2.0.0 in evaluation

7
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Channel-Length Modulation
Overlap Capacitance
Beyond Gradual-Channel Approximation
Complete Surface-Potential-Based Model
|
S0
: at source edge
|
SL
: at the end of the gradual-channel approx.
|
S(AL)
: at drain edge (calculated from |
SL
)
Extension of Bulk-MOSFET Model HiSIM2
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

HiSIM-HV

(Asymmetric) (Symmetric)
a few hundred volts > Bias Range > a few volts
V
gs,eff
= V
gs
I
ds
x R
s
V
ds,eff
= V
ds
I
ds
x (R
s
+ R
drift
)

V
bs,eff
= V
bs
I
ds
x R
s
potential drop
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Consistent Modeling in Drift Region
11
Y. Oritsuki et al., IEEE TED, 57, p. 2671, 2010.
L
drift
N
drift

V
DDP
Potential drop
in the drift region
V
ds
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

HiSIM reproduces |
S(AL)
calculated by 2D-device simulator.
: potential determining
LDMOS characteristics
|
S(AL)
|
S
(
A
L
)

[
V
]

|
S(AL)
|
S
(
A
L
)

[
V
]

|
S
(
A
L
)

[
V
]

|
S
(
A
L
)

[
V
]

V
gs
[V] V
ds
[V]
Key Potential Values
12
V
DDP
V
DDP
HV HV
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Modeling of R
drift
HiSIM_HV 1.0.0 Series
Bias Dependence is modeled based on principle.
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Quasi-saturation behavior of LDMOS is reproduced.
: 2D-Device Simulation Results
: HiSIM-HV Results
I
d

[
A
]

V
gs
=2.5V
V
gs
=5V
V
gs
=7.5V
V
gs
=10V
g
d

[
S
]

Accuracy Comparison of I
ds
-V
ds
14
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Relatively Low Breakdown Voltage
Relatively High Breakdown Voltage
Current-Voltage Characteristics
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Empirical Model: Issues
Care must be taken when adjusting critical parameters describing the Vgs dependence.
Ids - Vgs
Gm vs. Vgs
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

17
Model Benchmark Output Characteristic
H
i
S
I
M
_
H
V

1
.
1
.
2

v
.

B
S
I
M
3
v
3

S
u
b
c
i
r
c
u
i
t

A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Capacitance-Voltage Characteristics

C
a
p
a
c
i
t
a
n
c
e

[
f
F
]

V
gs
[V]
-4 -2 0 2 4
2.0
1.8
1.2
0.8
0.4
V
gs
[V]
C
a
p
a
c
i
t
a
n
c
e

[
f
F
]

C
gb
C
gg
C
gd
C
gs
V
ds
=0V
Asymmetrical LDMOS
Symmetrical HVMOS
Normal MOSFET
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

19
AC Modeling: Cgg
BSIM3+JFETS Subckt. HiSIM_HV
Subcircuit: bad fitting quality, especially in accumulation.
HiSIM_HV: good fitting quality in all regions.
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Self-Heating Effect for DC Analysis

A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

RC-Network:
Self-Heating Effect for AC Analysis

A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

22
Modeling R
drift
HiSIM_HV 2.0.0 Series
MOSFET + Resistor
MOSFET Resistor
DP
Channel
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Node potential V
ddp
is solved iteratively.
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Velocity saturation affects strongly on I-V characteristics.
2D-Device Simulation
24
V
DDP
I
d
d
p

I-V Characteristics of Resistor

A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

W
0

W
junc

W
dep

x
ov
L
over

D
junc
x
dep

x
junc

=
ddp
ddp drift ov
V
I W n x q
L
drift
| |
=
|
|
\ .
0 0
0
junc
- +
over
ov
W W
W A W W
D L
x
dep junc
= +
2 2
0 junc
W L D
over
x
junc
x
dep

D
junc

A

: junction depth
: current exude coefficient into
depletion region
V
ddp

ddp
I
25
Modeling Current-Flow in Overlap Region

A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

I
d

[
m
A
]

V
ds
[V]
x
ov
improvements
V
gs
= 3~9V, 15V, 30V
V
gs
[V]
2D-Device Sim.
HiSIM_HV

I
d

[
m
A
]

V
ds
[V]
V
ds
= 0.5V, 2V, 5V, 10~30V
V
gs
[V]
I
d

[
m
A
]

(L
ch
= 1m , L
over
= 1m, D
junc
= 2m)
Verification of I-V Characteristics
V
ds
= 0.5V, 2V, 5V, 10~30V
V
gs
= 3~9V, 15V, 30V
I
d

[
m
A
]

The x
ov
model
enables to fit I-V
characteristics
for wide range
of bias
conditions.
27
V
ds
= 0.5V, 2V, 5V, 10~30V
V
gs
= 3~9V, 15V, 30V
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Empirical Model vs. Physical Model: IdVg
Ids - Vgs
Gm vs. Vgs
HiSIM_HV 1.x.x Old Empirical HiSIM_HV 2.x.x New Physical
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Empirical Model vs. Physical Model: IdVd
HiSIM_HV 1.x.x Old Empirical HiSIM_HV 2.x.x New Physical
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

HiSIM_HV Release

A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

The Extreme Case; 120V Transistors
31
HV NMOS output and transfer characteristic of a typical wafer. W/L=40/0.5,
VGS= 2.9, 4.8, 6.7, 8.6, 10.5, 12.4, 14.3, 16.2, 18.1, 20 V, VBS=0 V. &
VBS= 0, -1, -2, -3, -4 V, VDS=0.1 V.
+ = measured, full lines= BSIM3v3 model; dashed lines = HiSIM_HV 1.2.1
HiSIM_HV 1.2.1 v. BSIM3 sub-circuit
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

32
Isolated HVMOS: High-Side Switch Modeling
- HVMOS used on the low-side of a load:
Source and Substrate hold at the same potential
- HVMOS used on the high-side of a load:
Both Source and Drain can be placed at high potential
=> Ron is changing with V
sub-s

Vsub=0
Vsub=-120V
Transfer Characteristics
Vd=0.1V, Vs=Vb=0
HiSIM_HV 1.2.1: Vsub modulates the effective depth of the drift region: Rdrift(V
sub,s
)
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

HiSIM_HV
The following effects are also included:
Depletion effect of the gate polycrystalline
silicon (poly-Si).
Quantum mechanical
CLM
Narrow channel
STI
Leakage currents
(gate, substrate and gate-induced drain
leakage (GIDL) currents).
Source/bulk and drain/bulk diode models.
Noise models (1/f, thermal noise, induced
gate noise).
Non-quasi static (NQS) model.

33
Complete Surface potential-based:
HiSIM_HV solves the Poisson equation along the MOSFET
channel iteratively,
including the resistance effect in the drift region.
high flexibility
20 model flags
scales with the gate width,
the gate length,
the number of gate fingers
and the drift region length.
In addition, HiSIM_HV is capable of modeling
symmetric and asymmetric HV devices.
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

Summary
Decision for HV Model depends very much on the application
Sub-circuit approach is very flexible and usable for switching
applications and for analog applications using large transistors
sizes.
HiSIM_HV 1.1.2 and 1.2.1 shows high accuracy for all benchmarks.
Detailed know how in parameter extraction needed
Extensive measurements necessary.
HiSIM_HV 2.x
First Version New physical drift region model is under evaluation
and shows excellent benchmark results.
34
A
l
l

r
i
g
h
t
s

r
e
s
e
r
v
e
d
.

2
0
1
1

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

A
G
.

M
a
t
e
r
i
a
l

m
a
y

n
o
t

b
e

r
e
p
r
o
d
u
c
e
d

w
i
t
h
o
u
t

w
r
i
t
t
e
n

a
p
p
r
o
v
a
l

o
f

a
u
s
t
r
i
a
m
i
c
r
o
s
y
s
t
e
m
s

a
n
d

m
a
y

o
n
l
y

b
e

u
s
e
d

f
o
r

n
o
n
c
o
m
m
e
r
c
i
a
l

e
d
u
c
a
t
i
o
n
a
l

p
u
r
p
o
s
e
s

a
t

t
h
e

U
n
i
v
e
r
s
i
t
y

o
f

T
e
c
h
n
o
l
o
g
y

G
r
a
z
.

- analog experts to help you leap ahead

04 Seebacher MOS-AK Helsinki

Hochgeladen von

Dokumentinformationen

Copyright

Verfügbare Formate

Dieses Dokument teilen

Dokument teilen oder einbetten

Freigabeoptionen

Stufen Sie dieses Dokument als nützlich ein?

Sind diese Inhalte unangemessen?

Copyright:

Verfügbare Formate

04 Seebacher MOS-AK Helsinki

Hochgeladen von

Copyright:

Verfügbare Formate

HV MOSFET Modeling with HiSIM_HV

Benchmarks and New Developments

Das könnte Ihnen auch gefallen