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S. Kal,
IIT-Kharagpur
S. Kal,
IIT-Kharagpur
Electrons are very obedient, magic particles. The valence electrons in a metal are free. They move freely within the metal boundary, but require some little energy ( called work function ) to come out from metal. Work Function a few eV, [1 eV = 1.602 X 10-19 Joule ] ( energy gained by an electron accelerated by 1 V p.d.)
Electron flow in semiconductors can produce miraculous effectsDiodes, Transistors, LEDs, Lasers, Detectors, Solar cells, Thermistors, SCRs etc., Integrated circuits, Microprocessors
S. Kal, IIT-Kharagpur
Electron flow in high vacuum Can also do a marvel : Vacuum tubes (triodes, pentodes) Cathode Ray Tube ( CRT ) ( TV picture tube, photomultiplier)
Thermionic Emission From a Hot Cathode
Evolution of Electronics
1890 1894 Hertz performs the first experiment on generation of electromagnetic waves. Sir J. C. Bose first showed the propagation of radio waves. Marconi also postulated the theory of radio wave propagation at the same time. H. A. Lorentz postulated the existence of discrete charges, called electron.
1895
1897
1897 1904
1906
De Forest put a third electrode (called grid) into the Fleming valve and invented triode tube, which he called an audion. The audion was the first amplifier. First application of electronics is Radio and birth of IRE (Institute of Radio Engineers) in USA. Black and white TV introduced. Color TV began. Birth of IEEE took place.
Evolution of Transistors
1947 (Dec) Brattain, Bardeen discovered point contact transistor, Shockley discovered junction transistor. All three of them were honoured by Nobel Prize in Physics in 1956 that was first Nobel prize in Engineering devices.
S. Kal, IIT-Kharagpur
Evolution of Transistors
1950 1951 1958 First grown junction transistor. Transistor produced commercially (first germanium and then silicon) Kilby (Texas Instruments, USA) gave monolithic idea and he got Nobel prize in 2001 1961 Fairchild & T.I. produced IC commercially.
Evolution of ICs
1951 1960 1966 Discrete transistor Small Scale Integration (SSI) [<100 components per chip ] Medium Scale Integration (MSI) [ > 100 but < 1000 ]
S. Kal, IIT-Kharagpur
Evolution of ICs
1969 1975 Large Scale Integration (LSI) [ > 1000 but < 10,000] Large Scale Integration (VLSI) [ > 10,000 ]
1980
106 components per chip. Typical VLSI chip size in 1978: 3 x 5 mm2 area, 0.1 mm thick. Total 30,000 components, i.e. 2000 components/mm2.
Ultra large Scale Integration (ULSI), > 10,000 components / mm2. 108 components per chip. Entire computer on single chip (6 mm x 6 mm) area.
1998
Evolution of Computers
1633 1833 1933 Schiokherd in Germany invented mechanical computer. First computing Charles Babbage. system analytical engine made by long
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Evolution of Computers
1946 1948 1954 1959 1965 1970 Electronic calculator by Eckest ( Pensylvania ). (18,000 tubes) General purpose small electronic calculator. First generation computer. ( IBM 650, tube version ) Second generation computer. ( IBM 7090 / 7094 series,transistor version) Third generation computer. ( IBM 360 system, IC version ) Computer with semiconductor memory. vacuum
1978
1980
area.
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Over the last 30 years or so, the semiconductor industry has successfully miniaturised integrated circuit (IC) chips to squeeze huge numbers of transistors on a single thumbnailsize wafer of silicon.
But to allow this we need extremely pure silicon, an exceedingly clean and smooth surface and absence of defects (contaminant, organic residue etc.) It may appear surprising, but the basis of all these high-tech gadgets is just sand (silicon)
S. Kal, IIT-Kharagpur
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Point Contact Transistor invented in 1947 by Bardeen, Brattain, Schockly at Bell Telephone Laboratories
- Nobel prize in 1956
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Moore's Law
Deep UV Litho 90 nm in 2004
100 nm
Every generation Feature size shrinks by 70% Transistor density doubles Wafer cost increases by 20% Chip cost comes down by 40% Generations occur regularly On average every 2.9 years over the past 34 years Recently every 2 years
10 nm
1 nm 1970
1980
1990
2000
2010
2020
Silicon Microelectronics
Currently > 100 M transistors / chip Silicon wafers (~ 4 12 inches)
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Units nm A V V
Ohm m
Cg Cpara Psatic
tD
(NAND)
F/m F/m
W/m
pS
30.24
18.92
12.06
7.47
4.45
2.81
Equivalent Oxide Thickness (EOT) = Td / ( K/Kox) ; using high-K dielectric of thickness Td and relative dielectric constant K. Kox = 3.9 (SiO2) 22
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What Is Nanotechnology?
The Working Definition:
Nanotechnology refers to any application of science that deals with elements between 100 nanometers and a tenth of a nanometer in size, in which size is critical to the applications ultimate purpose
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INNOVATION
CONVERGENCE
SOCIAL TRANSFORMATION
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Home TV
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Texas Instruments has announced the availability of its single-chip technology for cell phone makers in emerging markets Our customers can use this technology to make ultralow-cost handsets affordable in largely untapped consumer markets such as India, China, South America, Eastern Europe and other emerging markets Richard Templeton, CEO, TI
TEXAS INSTRUMENTS DELIVERS INDUSTRY'S FIRST INTEGRATED SINGLECHIP SOLUTION FOR MOBILE PHONES
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More Functions
Higher Revenue
($/in2 of Si)
Functional Blocks
Electronic System
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Transducers
A transducer may be defined as any device that converts energy in one form to other form.
Most of the transducers either convert electrical energy into mechanical displacement and /or convert some non-electrical physical quantity ( such as temperature, light, force, sound etc. ) to an electrical signal.
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Transducer
Classification of Transducers :
Passive transducers they require an external power supply and their output is a measure of some variation in a physical parameter such as pressure, resistance and capacitance etc Self-generating transducers they do not require an external power source. However they provide an electrical output when stimulated by some physical form of energy
S. Kal, IIT-Kharagpur
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2. Thermal
3. Optical
Thermistors, thermocouples
Photoconductor, photodiode, photovoltaic ( solar) cells
7. Biological
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1. Capacitor microphone
3. Pressure gauge
2. Dielectric gauge
S. Kal,
IIT-Kharagpur
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Electronic circuits together with digital displays have made measuring gadgets much more reliable, accurate and easy to handle.
(d) The body is made of polymers which are physically and chemically durable.
(e) The electronics used in this gadget is not complex, and yet, even a child can use this device.
S. Kal, IIT-Kharagpur
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I = V1 / ( R1 + R2 ) V2 = V1R2 / ( R1 + R2 )
2. R-C Filter R2 is replaced by a capacitance, C, the circuit behaves like a low pass filter
ZC 1 / jC , I V1 /( R1 ZC ), V2 ZCV1 /( R1 ZC ) V2 V1 / jC V1 R1 1 / jC 1 jC R1 high, V2 very sm all sm all, V2 high
S. Kal, IIT-Kharagpur
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V2/V1 = 1/[1+j/1]
[1 ( / 1 )2 ; 2
At 1 , | V2 / V1 | 1 /
S. Kal,
IIT-Kharagpur
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3. C-R Filter R1 is replaced by a capacitance, C, the circuit behaves like a high pass filter
ZC 1 / jC , 1 I V1 /( R2 ZC ), ZC jC V2 R2V1 /( R2 ZC ) V2 V1R2 jC R2 V1 R2 1 / jC 1 jC R1
high, V2 very high ( approaches V1) small, V2 very small ( almost zero)
S. Kal, IIT-Kharagpur
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At 2 , | V2 / V1 | 1 /
S. Kal,
IIT-Kharagpur
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S. Kal,
IIT-Kharagpur
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S. Kal,
IIT-Kharagpur
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COMPUTER SYSTEM
S. Kal,
IIT-Kharagpur
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S. Kal,
IIT-Kharagpur
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