Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

Types of Field Effect Transistors (The Classification) FET

JFET

n-Channel JFET p-Channel JFET

MOSFET (IGFET)

Enhancement MOSFET
n-Channel EMOSFET

Depletion MOSFET
n-Channel DMOSFET p-Channel DMOSFET

p-Channel EMOSFET

enhancement-type: no channel at zero gate voltage

Circuit Symbol (NMOS)

D
ID= IS

G
IG= 0

B
IS

(IB=0, should be reverse biased)

G-Gate D-Drain S-Source B-Substrate or Body

Figure: Circuit symbol for an enhancement-mode n-channel MOSFET.

Types of Field Effect Transistors (The Classification) FET

JFET

n-Channel JFET p-Channel JFET

MOSFET (IGFET)

Enhancement MOSFET
n-Channel EMOSFET

Depletion MOSFET
n-Channel DMOSFET p-Channel DMOSFET

p-Channel EMOSFET

Figure: For vGS < Vto the pn junction between drain and body is reverse biased and i D=0.

Structure: n-channel MOSFET (NMOS)

body (bulk or B substrate) source S
IS

gate: metal or heavily doped poly-Si G drain IG=0 D

ID=IS

metal
oxide

n+ p x L

n+

For this choice of materials, VGS<0

n+pn+ structure ID ~ 0
gate G
- +

body B

source S

drain D

VD=Vs n++
oxide

n+

n+

Flatbands < VGS < VT (Includes VGS=0 here).

n+-depletion-n+ structure ID ~ 0
source S gate G
- +

body B

drain D

VD=Vs

+++ n++
oxide

n+

n+

n+-n-n+ structure inversion

body B source S gate G
- +

VGS > VT

drain D

n+

+++ +++ +++ n++ oxide -----

VD=Vs

n+

Triode Region
A voltage-controlled resistor @small VDS
B S - + +++ +++ metal - oxide - - p B S -+ +++ +++ +++ metal - -oxide - - -p D VGS2>VGS1 G n+ D VGS1>Vt

ID

increasing VGS

n+

n+

n+

cut-off
B
S -+ +++ +++ +++ +++ metal - - -oxide -----p D VGS3>VGS2

VDS 0.1 v

n+

n+

Increasing VGS puts more charge in the channel, allowing more drain current to flow

Figure: As vDS increases, the channel pinches down at the drain end and iD increases more slowly. Finally for vDS> vGS -Vto, iD becomes constant.

Current-Voltage Relationship of n-EMOSFET

Locus of points where

The MOSFET Device and S Model

The S circuit model of the n-channel MOSFET inverter

The transfer characteristic of the inverter

STATIC ANALYSIS USING THE S MODEL

A mapping between logic values and voltage levels corresponding to a static discipline appropriate for the inverter.

THE SR MODEL OF THE MOSFET

STATIC ANALYSIS USING THE SR MODEL

ACTUAL MOSFET CHARACTERISTICS

The MOSFET operates in its triode region

VDS < VGS VT and VGS VT

If

then

Characteristics of the MOS device in the saturation region

SIGNAL AMPLIFICATION

The MOSFET is in saturation when

The drain-to-source current of the MOSFET is given by

the node equation

VO versus VIN curve for the amplifier