Beruflich Dokumente
Kultur Dokumente
Intro
1. intro Overview of the lesson 2. Learning objective present learning objective of the lesson 3. Table of Content structure of the topics and subtopics in the lesson
Study 4. Lecture (75-90 minutes) present the lecture in detailed topics that covers all the learning objectives of the lesson. - each topics should be divided into subtopics (5-15 min in length is recommended) - if a subtopic goes over 15 minutes divide the subtopic into series of subtopics.
Assessment
Review
Class end
Course
Lesson # Title
SME
Intro The basic of electronic system is semiconductor device. The most famous and commonly used active devices are BJTs (Bipolar Junction Transistors) and FET (Field Effect Transistor). BJT can be use as amplifier and logic switches. Pre-required knowledge: structure and operation of diode
Learning Objectives At the end of this chapter, the students shoul be able to: Understand the basic transistor operation & configuration Discuss transistor parameters and characteristics
Table of Content Operating point Bias circuit Design Operations Transistor switching network PNP Transistors Bias Stabilization
Operating Point
IC (MA) ICMAX 25 80 A 70 A 60 A 20 50 A PCmax
15 Saturation 10 B
40 A
Bias Circuit
Fixed bias Circuit Emitter stabilized bias Circuit Voltage - divider bias Circuit DC Bias with Voltage Feedback Miscellaneous bias configuration
Fixed-bias Circuit
Vcc RB RB IB C1 RC C IC IB RC
Vcc
Vcc
IC
B+ _ VBE E
+ _
C2
C B+ _ E VBE
+ _
Fixed-bias Circuit
Forward Bias of Base-Emitter
+ RB
Collector-Emitter loop
+ IC
RC _
+
Vcc
Vcc
IB
+ VBE _
VCE _
Collector-Emitter loop = + = 0 =
Fixed-bias Circuit
Load Line Analysis
IC (MA) 50 A 40 A 30 A
20 A 10 A IB = 0 A 5 10 15 VCE (V)
RB
RC
+
IC
Vcc
+
VCE IB
(V)
**
Fixed-bias Circuit
Fixed-bias Circuit
Fixed-bias Circuit
(V)
=15.51 A ICQ=IB =(120)(15.51 A) = 1.86 mA VCEQ =VCC - ICRC = 20V (1.86Ma)(4.7k) = 11.26V VB =VBE=0.7 V VC =VCE=11.26 V VE =0 V VBC=VB VC=0.7 V - 11.26 V =-10.56 V
Substituting values yields 20;0.7 IB=240:(91)(2) =240:182=422 = 45.73 A IC= IB = (90)(45.73A) = 4.12 mA
19.3 19.3
Applying Kirchhoffs voltage law to the output circuit, we have -VEE + IERE+ VCE =0 But IE =(+1)IB And VCEQ = VEE (+1)IBRE =20 V (91)(45.73 A)(2k) =11.68 V IE =4.16 mA
Substituting values, we obtain 4 ;0.7 IE= = 2.75 mA 1.2 Applying Kirchhoffs voltage law to the output circuit gives -VCB + ICRC VCC = 0 And VCB = VCC ICRCwith IC IE =10 V (2.75 mA)(2.4k) =3.4 V IB =
2.75 = 60
= 45.8 A
Design Operations
Design of a Bias Circuit with an Emitte Feedback Resistor
Design Operations
Determine the resistor values for the network for the indicated operating point and supply voltage
Design Operations
VE = 10VCC =
RE = RC = IB = RB =
20V 10
= 2V
= 2mA= 1k =
20V;10V;2V 2mA
2V
;CE ;
= 4k
2mA 150
= 13.33A =
20;0.7;2 13.33
;BE ;
= 1.3M
Design Operations
Design of Current-Gain-Stabilized (Beta-Independent) Circuit
Design Operations
Determine the levels of RC, RE, R1, and R2, for the network of this Figure for the operating point indicated VCC = 20V
R1
= 10
RC + _
C2 AC output 10F
AC input
C1 10F R2
= 8
RE
CE
100F
Design Operations
VCC = 20V
1 20V 10
VE = 10VCC = RE =
= 2V
= 10mA= 200
2V
R1 C1 AC input 10F R2
= 10
RC
+
_
AC 10F output
C2
RC =
;CE ;
20V;8V;2V 10mA
= 1k
= 8
RE
CE
100F
Vi 5V RB RC 0.82
VC
5V
0V
68
= 125
0V
t
6.1
= 5
VC 10V 10V RB 0V
VCC = 5V RC VC 10V
= 250
0V 0V
ICsat=
10mA 250
= 40A
We obtain: RB=
155k
Choose RB = 150k, which is a standard value. Then V ;0.7V 10V;0.7V IB = i R = 150k = 62A
IB = 62A
= 40A
RB= 150k, RC = 1k
PNP Transistor
-IERE +VBE - IBRB +VCC = 0 _ + + IB VCE _ _ _ RE + IE
_
RC + IB = R IC
VCC :VBE :(:1)R
PNP Transistor
Example: Determine VCE for the voltage-divider bias configuration of this Figure 18 2.4 47 10F Vi B C + VBE _ E 10F
10 1.1
PNP Transistor
Testing the condition: Results in: RE 10R2 (120)(1.1k) 10(10 k) 132 k 100 k (sastified) Solving for VB, we have:
CC VB = R 2:R = 1 2
R V
10 k (;18 V) 47 k:10 k
= 3.16V
Note the similarity in format of the equation with the resulting negative voltage for VB. Applying Kirchhoffs voltage law around the base-emitter loop yields: VB - VBE VE = 0 and Substituting values, we obtain VE= -3.16 V (-0.7 V) = -3.16 V + 0.7 V = -2.46 V VE = VB VBE
PNP Transistor
Bias stabilization
: : 7.5 ( ) : 10
Bias stabilization
Bias stabilization
=
= =
1 + / = ( + 1) + 1 + / / ( + 1): = + 1
= ( + 1) = + ( + 1) 1 (1 + / ) = = 1 (1 + 2 + / )
1 + / + 1 + /
1 + / = ( + 1) + 1 + /
Bias stabilization
Example
Calculate the stability factor and the change in IC from 25oC to 100oC for the transistor defined by the Table for the following emitter-bias arrangements. (a) RB/RE = 250 ( RB = 250 RE) (b) RB/RE = 10 ( RB = 10 RE) (c) RB/RE = 0.01 ( RE = 100 RB)
Bias stabilization
Bias stabilization
Determine the stability factor S(VBE) and the change in IC from 25oC to 100oC for the transistor defined by the Table for the following bias arrangements. (a) Fixed-bias with RB = 240k and = 100. (b) Emitter-bias with RB=240k, RE=1k, and =100. (c) Emitter-bias with RB=47k, RE=4.7k, and =100.
Bias stabilization
Bias stabilization
Determine the stability factor S(VBE) and the change in IC from 25oC to 100oC for the transistor defined by the Table for the following bias arrangements. (a) Fixed-bias with RB = 240k and = 100. (b) Emitter-bias with RB=240k, RE=1k, and =100. (c) Emitter-bias with RB=47k, RE=4.7k, and =100.
Assessment
Quiz 1
Assessment
Quiz 2
Assessment
Quiz 3
Assessment
Quiz 4
Assessment
Quiz 5
Determine the following for the network of the above figure (a) S(ICO) (b) S(VBE) (c) S() using T1 as the temperature at which the parameter values are specified at (T2) as 25% more than (T1). (d) Determine the net change in IC if a change in operating conditions results in ICO increasing from 0.2 to 10A, VBE drops from 0.7 to 0.5V, and increases 25%.
Review Summary: this chapter provide Operating point, Bias circuits, Transistor switching network, Bias Stabilization. Main Bias circuits are: Fixed bias Circuit , Emitter stabilized bias Circuit, Voltage - divider bias Circuit