Radiation Effects on Emerging Electronic Materials and Devices

Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics

Team Members
Vanderbilt University
Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller Physics: Len Feldman, Sok Pantelides

Arizona State University

Electrical Engineering: Hugh Barnaby

University of Florida
Electrical and Computer Engineering: Mark Law, Scott Thompson

Georgia Tech
Electrical and Computer Engineering: John Cressler

North Carolina State University

Physics: Gerry Lucovsky

Rutgers University
Chemistry: Eric Garfunkel, Evgeni Gusev

Institute for Space and Defense Electronics

Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: Government and industry radiation-effects resource
Modeling and simulation Design support: rad models, hardening by design Technology support: assessment, characterization

Flexible staffing driven by project needs

Faculty Graduate students Professional, non-tenured engineering staff

Radiation Effects on Emerging Electronic Materials and Devices

More changes in IC technology and materials in past five years than previous forty years
SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices

Future space and defense systems require understanding radiation effects in advanced technologies
Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation

Approach
Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners First-principles quantum mechanical analysis of radiation-induced defects physically based engineering models Development and application of a fundamentally new multi-scale simulation approach Validation of simulation through experiments

Virtual Irradiation
Fundamentally new approach for simulating radiation effects Applicable to all tasks

QuickTime and a TIFF (LZW) decompressor are neede d to see this picture.

Physically Based Simulation of Radiation Events

High energy protons incident on advanced CMOS integrated circuit Interaction with metallization layers dramatically increases energy deposition
Device Description Radiation Events

Hierarchical Multi-Scale Analysis of Radiation Effects

Materials

Device Structure Energy Deposition

IC Design

Defect Models Device Simulation Circuit Response

Current Joint Program of ISDE/VU and CFDRC

Improved Understanding of Space Radiation Effects in Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials
STTR Phase I Project, sponsored by NASA Ames (2005): Program Objectives: Couple Vanderbilt Geant4 and CFDRC NanoTCAD 3D Device Solver Adaptive/dynamic 3D meshing for multiple ion tracks

Statistically meaningful runs on a massively parallel computing cluster

Integrated and automated interface of Geant4 and CFDRC NanoTCAD 3D device simulation

Geant4
- accurate model of radiation event - Adaptive 3D meshing - 3D Nanoscale transport
1.E-03
ion str ike He ion, LET= 1.18, R= 0.02um He ion, P- sub Contact

- Physics based transient response

C ion, LET =5.06, R =0.06um C ion, P- sub Contact

p
Blue = + ions

e-

Drain Curre nt (A) 8.E-04

0.13um NMOS, Vd = 1.2 V, Vg = 0V Tw o differe nt ion strikes Psub Contact / No-Contact

6.E-04

4.E-04

2.E-04

Time (s)

0.E+00 1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

Research Plan
Tasks defined and scheduled

Organization by Task
Radiation response of new materials
NCSU, Rutgers, Vanderbilt

Impact of new device technologies on radiation response

ASU, Florida, Georgia Tech, Vanderbilt

Single-event effects in new technologies and ultrasmall devices

Florida, Georgia Tech, Vanderbilt

Displacement-damage and total-dose effects in ultrasmall devices

ASU, Vanderbilt

Radiation Response of New Materials

HfO2-based dielectrics and emerging high-k materials Metal gates Interface engineering (thickness & composition) Hydrogen and nitrogen at SiON interfaces (NBTI) Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) Defects in nanoscale devices Energy deposition via Radsafe/MRED

Impact of new device technologies on radiation response

SiGe HBTs Strained Si CMOS Ultra-small bulk CMOS Mobility in ultra-thin film SOI MOSFETs TID response in scaled SOI CMOS Multiple gate/FinFET devices Multi-scale hierarchical analysis of single-event effects

Single-event effects in new technologies and ultra-small devices

Development/application of integrated simulation tool suite
Applications in all tasks

Effects of passivation/metallization on SEE Tensor-dependent transport for SEE Extreme event analysis Spatial and energy distribution of e-h pairs Energy deposition in small device volumes

Displacement-damage and totaldose effects in ultra-small devices

Physical models of displacement single events Microdose/displacement SEE in SiGe and CMOS devices Single-transistor defect characterization Link energy deposition to defects through DFT molecular dynamics Multiple-device displacement events Dielectric leakage/rupture
10
2.6 nm (Equiv. Oxide Thick. ) Al2O3 3.3 nm SiO2(15%N) 5.4 nm 3.3 nm (Physical) SiO2 Al2O3

8
VBD (V)

6
2.2 nm SiO2 SiO2 Data From Sexton at al . 1998

'06 '09

'03

'01

'97

VDD from National Technology Roadmaps 0 0

10 Film Thickness (nm)

15

20

Collaborators
IBM
SiGe, CMOS, metal gate, high-k

SRC/Sematech
CMOS, metal gate, high-k, FinFETs

Intel
Strained Si and Ge channels, tri-gate, high-k, metal gate

Sandia Labs
Alternative dielectrics, thermally stimulated current

Texas Instruments
CMOS

NASA/DTRA
Radiation-effects testing

Freescale
BiCMOS and SOI

Oak Ridge National Laboratory

Atomic-scale imaging

Jazz
SiGe

CFDRC
Software development

National
SiGe