Beruflich Dokumente
Kultur Dokumente
Jerry Kao
jckao@umich.edu
Electrical Engineering & Computer Science Department The University of Michigan, Ann Arbor
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FRAM Structure
Motives for FRAM: short programming time and low power consumption. Easily integration in a SoC.
FRAM Comparison
Target application: contactless smart card, and digital camera Also hoping to be part of the mobile device market.
This paper focused on the six innovative circuit techniques.
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Read access consists of a write access followed by sensing. Writing the wrong data will induce a large current. write the data stored in sense amp back to cell after write access.
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Name was adopted to convey similarity in the hysteresis loop. Key concept: spontaneous polarization: a displacement that is
Popular matieral is lead zirconate titanate (PZT), perovskites. At 0V, the cell has two possible states.
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Pulse-Sensing Approach
pulse PL before sense amp. has a smaller common mode
voltage.
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comparison. V0 and V1 are not exact and are process and time dependent. Two type of ferroelectric imperfections: Relaxation: a partial loss of remanent charge in a s if cap is not access
for a period of time. V1 or V0
Imprint: the tendency of a cell to prefer one state over the other if it stay
in that state for a long period of time. shift in V1, V0, and VREF.
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(1C/BL). CREF is sized larger than CFE so that VREF is midway between V0 and V1. When WL0 and RWL0 or WL1 and RWL1 are turned on at the same time, and the sense amp amplify the difference between BL and /BL. Reset transistor are added to reduce a voltage build up in the CREF. VREF tuning achieves using adjustable CREF, adjustable RPL, or adjustable voltage reference generator.
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also called (2C/2BL). CREF1 = CREF0 = CFE BL1 has V1 and BL2 has V0 before EQ
turn ON. After EQ turn ON, VBL1=VBL2=(V0+V1)/2 At the end, a 0 and 1 must be restored in CREF0 and CREF1 by pulsing RPL thru transistor driven by RP.
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also called (2T-2C) Two CFEs store opposite values. twice the voltage difference between BL
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Summary
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2T-2C is the most robust, but has density issue. among 1T-1C, 2C/2BL and 2C/WL schemes have superior
sensing complexity and fatigue immunity, respectively.
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Wordline-Parallel Plateline
also called (WL//PL) PL is parallel to WL a row of cells are access at the
same time. If PL is shared between two row, un-accessed row can be disturbed. When disturbed, 0 is reinforced, and 1 might be flipped.
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Bitline-Parallel Plateline
also called (BL//PL) only a single cell can be selected. absorb the y-decoder and reduce the
power significantly. PL activation can disturb all the cells in the column.
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Segmented Plateline
also called (Segmented PL) Break the PL into local segments.
faster PL than WL//PL no disturbance to non-selected cell
compared to BL//PL.
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BLn=0V and BLn+1=VDD ML1 and ML2 set to VDD, forcing 0 into C1. ML1 pulled down to ground, leaving 0 in C1, and forcing 1 into C2. ML1 pull to VDD and ML2 are pull to ground forcing 1 into C1 if BLn were at VDD.
write access
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BL1=BL2=0V activate WL VDD/2 used to switch the cap storing 1. Good for SrBi2Ta2O9 Sense amp restore the value by holding BL1=BL2.
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Bitline-Driven Architecture
PL=0V full VDD when read, and no refresh on
VDD/2
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Shaded circuit precharge BL and /BL to VDD or 0V before activating the WL. PL is only pulsed after sensing. This reduce the read access time, but not read cycle time. Performance can be improved if combined with segmented PL.
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Transpolarizer-Based Architectures
two CFE connected in opposite
direction. Simpler reference voltage since (V1+V0)/2 always equal to VDD/2. Although it is a 1T-2C structure, the C is smaller than 1T-1C to get small signal level on BL. Read operation with t4 and t5 doing write back.
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Architecture Summary
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Future Trends
Progress in density, access time, and SoC integration can be
assumed.
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62kb and 256kb has been achieved with 1Mb expected. Access time hasnt improved, but can be through circuit innovation. It is easier to integrate FRAM to SoC compare to EEPROM.
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Motivation
What is the most energy-efficient storage platform for the
sensor networks, and what is the implication on sensor network design?
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Background
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NOR flash is less dense than NAND and uses more energy for
erase and programming, but provides random read access time less than 100ns. NAND flash has significantly higher starting latency, but can stream subsequently read bytes at high speed since it is always page-oriented. Writes are one-way. Need to erase before the next write. A microcontroller is used to translate the disk like operation to NAND interface, which also increase power consumption. This takes care of erasure, page remapping, ECC, and wear leveling.
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energy overhead compared to write operation. having a write buffer can amortizes the fix cost over a larger number of data bytes.
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Idle Current
NOR and NAND device are smaller between 2A and 5A,
which is smaller than mote CPUs 5A and 15A or self discharge current of AA battery of 10A.
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NOR and NAND device has idle current that is 17X smaller than MMC.
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Summary
parallel NAND flash is the most energy efficient storage for
sensor network. A desired device would have the performance of a parallel NAND and the pin count of a serial NAND flash. ECC is better handle using the microcontroller during idle cycle.
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radio transmission of a byte is 200X over write access, and 500X over read access. Suggested that storage energy should be part of the trade-off. Applications that benefit In-network Query Process. Use of History Network-level compression Custody Transfer
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greater than 128 bytes. In 1% duty cycles, it achieves 3.8 times less energy/byte with batch size of 512 bytes and 58 times improvement for a batch size of 65kbytes. The 7.5% duty cycle has smaller preamble resulting in less fix energy cost per packet.
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use a benchmark wavelet compression scheme optimized for floating pointless operation with computation complexity of 60N. Conclude that 10X energy consumption saving for using of data aggregation.
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Conclusion
parallel NAND flash has 100 fold more energy efficient than
serial NOR flash. This observation has implication for sensor network design. Data shows that communication and data aggregation achieves at least an order of magnitude energy reduction.
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Operation
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