EE 359 Electronic Circuits

Field Effect Transistors (FET)

Enhancement/ Depletion Current vs Voltage Characteristics DC/ Small Signal Analysis
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EE 359 Electronic Circuits

HW & Project
Chapter 4, FET Transistors due Sep. 24
4.12,4.46,4.75,4.96 Quiz 1 Sep 28 Quiz 2

Oct 30 Project abstracts due October 9 (Tuesday following Monday schedule)

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EE 359 Electronic Circuits

Field Effect (MOS) Transistor

Typically L = 1 to 10 m, W = 2 to 500 m, and the thickness of the oxide layer is in the range of 0.02 to 0.1 m.

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EE 359 Electronic Circuits

Operation
The enhancement-type NMOS transistor with a positive voltage applied to the gate.

An n channel is induced at the top of the substrate beneath the gate.

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EE 359 Electronic Circuits

Triode Region
vGS > Vt ,small vDS applied.

the channel conductance is proportional to vGS - Vt, and is proportional to (vGS - Vt) vDS.
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Saturation Region
vGS > Vt.
The induced channel acquires a tapered shape and its resistance increases as vDS is increased.

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EE 359 Electronic Circuits

Drain current iD versus vDS

Enhancement-type NMOS transistor operated with vGS > Vt.

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EE 359 Electronic Circuits

Derivation of the iD - vDS characteristic of the NMOS transistor.

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EE 359 Electronic Circuits

Cross section of a CMOS integrated circuit. Note that the PMOS transistor is formed in a separate ntype region, known as an n well. Another arrangement is also possible in which an n-type body is used and the n device is formed in a p well.
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EE 359 Electronic Circuits

n-channel enhancementtype MOSFET with vGS and vDS applied and with the normal directions of current flow

The iD - vDS characteristics for a device with Vt = 1 V and kn(W/L) = 0.5 mA/V2.
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EE 359 Electronic Circuits iD - vGS characteristic for an enhancement-type NMOS transistor in saturation (Vt = 1 V and kn(W/L) = 0.5 mA/V2).

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EE 359 Electronic Circuits

Increasing vDS beyond vDSsat causes the channel pinch-off point to move slightly away from the drain, thus reducing the effective channel length (by L).

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Effect of vDS on iD in the saturation region.

The MOSFET parameter VA is typically in the range of 30 to 200 V.

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EE 359 Electronic Circuits

Large-signal equivalent circuit model

n-channel MOSFET in saturation, incorporating the output resistance ro. The output resistance ro VA/ID.
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EE 359 Electronic Circuits The current-voltage characteristics of a depletion-type n-channel MOSFET for which Vt = -4 V and kn(W/L) = 2 mA/V2

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iD - vDS characteristics

iD - vGS saturation

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EE 359 Electronic Circuits

MOSFET as an amplifier.

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EE 359 Electronic Circuits

Small Signal
Instantaneous voltages vGS and vD

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EE 359 Electronic Circuits

Models for MOSFET

neglecting the dependence of iD on vDS in saturation (channel-length modulation effect)

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EE 359 Electronic Circuits

Model with Output Resistance

Including the effect of channel-length modulation modeled by output resistance ro = |VA|/ID.

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EE 359 Electronic Circuits

T model of the MOSFET

T model of the MOSFET augmented with the drain-tosource resistance ro.

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EE 359 Electronic Circuits

Sample Circuit
Output characteristic of the current MOSFET current mirror.
current mirror Q2 is matched to Q1.

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EE 359 Electronic Circuits

The CMOS common-source amplifier

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EE 359 Electronic Circuits

The CMOS common-gate amplifier

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The source follower

(a) circuit; (b) small-signal equivalent circuit (c) simplified version of the equivalent circuit.
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EE 359 Electronic Circuits

NMOS amplifier with enhancement load

graphical determination of the transfer characteristic

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transfer characteristic.

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The NMOS amplifier with depletion load: (a) circuit; (b) graphical construction to determine the transfer characteristic; and (c) transfer characteristic.

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EE 359 Electronic Circuits

Small-signal equivalent circuit of the depletion-load amplifier

With the body effect of Q2.

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EE 359 Electronic Circuits

The CMOS inverter

Simplified circuit schematic for the inverter.

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EE 359 Electronic Circuits CMOS inverter operation

v1 is high: (a) circuit with v1 = VDD (logic-1 level, or VOH); (b) graphical construction to determine the operating point; and (c) equivalent circuit.

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EE 359 Electronic Circuits CMOS inverter operation

v1 is low: graphical construction to determine the operating point; and (c) equivalent circuit.

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EE 359 Electronic Circuits

Voltage transfer characteristic of the CMOS inverter.

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