Sylhet International University

Welcome to our presentation

Bipolar Junction Transistor (BJT)

Rudela Sourav Chowdhury

Electronics & Communication Engineering (3-1) Sylhet International University. Shamimabad, Sylhet-3100.

Contents
Introduction
Types of Bipolar Junction Transistor (BJT) BJT configurations Common Base Common emitter Common Collector

Transsistor
A transistor consist of two pn junction formed by

sandwiching either p-type or n-type semiconductor between a pair of opposite types 1) BJT 2)FET

Bipolar Junction Transistors (BJT)

Transistor has two PN junction. One junction is forward

biased and other is reverse biased. The forward biased junction has a low resistance path and a reverse biased junction has high resistance path. This transistor transfer a signal from a low resistance to high resistance .

npn

pnp

stors
E
n
Cross Section

C
p B n C p
Cross Section

C
n B p C

B
Schematic Symbol

B
Schematic Symbol

BJT Configurations
Common Base Common emitter Common Collector

Common Base configuration

The base is common to both input (emitter base) and output (collector base) of the transistor.

Common Base Configuration

Input Characteristics for a Common-Base Amplifier
The following points may be

noted from this characteristics 1) The emitter current IE increases rapidly with small increase in emitter base voltage VBE . It means that input resistance is very small. 2) The emitter current is almost independent to collector base voltage VCB .

Output Characteristics for a CommonBase Amplifier

IC Active Region Saturation Region IE

Cutoff IE = 0
VCB

Common Base Configuration Three regions of operation

Active

Operating range of the amplifier. Cutoff The amplifier is basically off. There is voltage but little current. Saturation The amplifier is full on. There is little voltage but lots of current.

COMMON-EMITTER CONFIGURATION
In the common-emitter configuration , the emitter is common or reference to both the input and output terminals (in this case common to both the base and collector terminals).

Common Emitter Configuration

Input Characteristics for a Common-Emitter Amplifier
The following points may be noted from this characteristics 1) The characteristics resembles that of a forward biased diode curve. This is expected since the the base emitter section of transistor is a diode and it is forward biased. 2) As compared to CB arrangement, IB increases less rapidly with VBE. Therefore input resistance of a CE circuit is higher than that of CB circuit.

Output Characteristics for a CommonEmitter Amplifier

Output Characteristics for a CommonEmitter Amplifier cont.

In the active region of a common-emitter

amplifier the collector-base junction is reversebiased, while the base-emitter junction is forwardbiased. For linear (least distortion) amplification purposes, cutoff for the common emitter Configuration will be defined by IC =ICEO.

Common Collector Configuration

The collector is common to both input (base - collector) and output (emitter collector) of the transistor.

Common Collector Transistor Characteristics

Cut-off region: VCE is at

maximum and IC is at minimum (IC max=ICEO). Saturation region: IC is at maximum and VCE is at minimum (VCE max = VCE sat = VCEO). Active region: The transistor operates between saturation and cutoff.

Thanks to all of you