Introduction to programming technologies

One of the first technique that allowed users to program their own devices was- and still is known as fusible-link technology. In this case the device manufactured with all of the links in place, where each link is referred to as a fuse.

Fusible Link technologies

A simple programmable function Every Programmable function is implemented using Potential links Pull up resistors Input and output terminals

Un programmable fusible links

In Un programmable fusible links uses the fuses are similar to the fuses you find in household products like a television. If anything untoward occurs such that the television starts consuming too much power its fuse will burn out. This results in an open circuit

Programmable Fusible Links

Here programming is done by selectively removing the undesired fuses by applying pulses of relatively high voltage

and current to the devices inputs.

 The process of selectively removing the fuses is known as programming( but it may also referred to as burning or blowing)

Drawback
Devices based on the fusible link technologies are said to be one-time programmable(OTP), because once a fuse have been blown it cant be and no going

back..

Antifuse technology
This Antifuse technology is an alternative to the fusible technology

In which each configurable path has an associated link called Antifuse. In its unprogrammmed state Antifuse has high resistance that is considered to be an open circuit.

Programming an antifuse
Antifuses can be selectively grown(programmed) by applying
proper high voltages and currents to the device's inputs

The Polysilicon via converts insulation to conduction

 These antifuses are also OTP devices

MASK PROGRAMMABLE DEVICES

Electronic systems in general and computers in particularmake use of two major classes of memory devices: read-only memory (ROM) and random-access memory(RAM) ROM: 1.nonvolatile .2.Other components in the system can read data from ROM devices, but they cant write data into them.

RAM:1. Volatile
2.By comparison data can be both written into and read out of RAM devices which are said to be volatile .

ROM
Basic ROMs are mask programmed Their construction by means of photo masking. Photo masking is used to create transistors and metal tracks

The problems of Mask devices

Creating the masks are very expensive They are useless, unless producing the extremely large quantities To overcome the above problem they invented programmable ROMs PROM, EPROM,EEP[ROM

PROM

Thses are used as memory devices Used to implement simple logics Cheap They designed using fusible and anti fusible technoilogies

EPROM
Theses are also called as reprogrammable devices Being introduced by Intel in 1971 Its structure is same as standard MOS transistor but with the addition of second polysilicon floating gate isolated by layers of oxide.

 In its unprogrammed state , the floating gate uncharged and doesnt affect the

normal operation of the control gate.

Inorder to program the transistor , a

relatively high voltage is applied b/w drain

and gate

 This 12V causes the transistor to be truned on

and energetic electrons force their way through

the oxide into the floating gate in a process known as hot (high enery ) electronic injection. When the programming signal is removed a negative charge remains on the floating gate and it is stable and will not dissipate more than one decade under normal operations.

 An EPROM is erased by discharging the electrons on that cells floating gate. The energy required to discharge the electrons by a source of ultraviolet (UV) radiation
If the area smaller amd then density increases, a larger percentage of the surface of the die is covered by metal. This makes it difficult for the EPROM cells to absorb the UV light and increase the time.

EEPROM

 The E2PROM transistor is same as EPROMtransistor in that it contains a floating gate , but the insulating oxide layers surroung this gate are very much thinner. The second transistor used to erase the data.

FLASH based technologies

A deThe name FLASH was originally coined to reflect this technologies rapid erasure times compared to EPROM It has two types of architectures .

 In the first architecture using a single floating gate transistor cell with the same area as an EPRM and thinner oxide like layer like EEPROM. SO theses devices can clearing large portions of the data. The other architecture uses two-transistor cell similar to EEPROM cell to erase word by word,.

SRAM based technology

RAMs are two types SRAM and DRAM DRAMs : In the case of DRAMs , each cell is formed from a transistor-capacitor pair that consumes very little silicon material . The dynamic qualifier is used because the capacitor loses its charge over time, so each cell must be periodically rechraged periodically to retain its data.

The output of the SRAM IS CONTROLED BY A CONTROL TRANSISTOR

 Dis Advantage: 1. It Uses significant amount of silicon because each cell comprises of four to six transistors 2. When power is removed the configured data will be lost. Advantage: Thhey can be programmed quickly and repeateadly as required.