EXPERIMENT NO-3

AIM OF THE EXPERIMENT

VI characteristics of a PN junction diode for forward and reverse biasing . Determination of D.C and A.C resistance.

OBJECTIVE
Plot the graph V vs. I for forward bias and reverse bias. Find the DC and AC resistance for forward bias.

APPARATUS REQUIRED
SL . NO 1 2 3 4 COMPONENT/EQUIPMENT Micro lab kit DC power supply Multi meter Diode IN4007 0-30 volt SPECIFICATION QUANTITY 1 2 2 1

5
6 7

Zener diode
Resistor Connecting wires

6.7 V
1 K

1
1 As required

THEORY
SEMICONDUCTOR DIODE:
Diode is a two terminal electronic component with asymmetric conductance, it has low resistance to current flow in one direction . There are two types of semiconductor diode:i) P TYPE ii) N -TYPE
TYPES OF BIASING A. No biasing B. Forward biasing C. Reverse biasing

DIODES

FORWARD BIASING(VD<0v)
I. A forward bias condition is established by applying the +ve potential to the p-type material and ve potential to the n-type material. II. The application of VD will pressure the electrons in the n-type and holes in the p-type material to recombine with the ions near the boundary and reduce the depletion layer. III. As the applied bias increases the depletion region will continue to reduce in width until a flood of electrons will pass through the junction. IV. As a result an exponential rise in current occurs.

FORWARD BIASING OF P-N JUNCTION

REVERSE BIASING(Vd<0v)
I. For reverse biasing +ve and ve terminals are connected to the n-type and p-type materials respectively. II. As a result the no. of uncovered +ve ions in depletion region of the n-type material will increase due to the large no. of free electrons drawn to the +ve potential of the applied voltage. III. Similarly the no. of uncovered ve ions will increase in the p-type material.Hence the width of the depletion region increases leading to behave like a barrier for majority carriers. IV. When reaches its max level the saturation comes and at this level there occur the significant change even if with the increase of reverse of the reverse bias potential.

REVERSE BIASING OF P-N JUNCTION

Shockleys equation

Where, Is = reverse saturation current

VD= forward bias voltage applied across the

n = ideality factor

diode

VT =KT/q
K = Boltzmann's constant T= absolute temperature q = magnitude of electronic charge

MODEL GRAPH

CIRCUIT DIAGRAM OF FORWARD BIAS OF DIODE

CIRCUIT DIAGRAM OF REVERSE BIAS OF ZENER DIODE:

PROCEDURE
FORWARD BIASING
I. II. Connect the circuit as per the circuit diagram. Vary the power supply voltage(Vi) 0-5 in such a way that the readings are taken in step of 0.2 V.

III. Note down the forward voltage (V f) to the corresponding

forward current(If). IV. Plot the graph V vs. I. V. Find the dynamic resistance and static resistance from the graph.

REVERSE BIASING:
I. II. Connect the circuit as per the circuit diagram. Vary the power supply voltage(Vi) 0-15 in steps of 1 volt.

III. Note down the reverse voltage (Vr) to the corresponding

reverse current (Ir). IV. Plot the graph V vs. I.

CHARACTERISTIC CURVE FOR FORWARD BIAS OF DIODE

CHARACTERISTIC CURVE FOR REVERSE BIAS OF ZENER DIODE

OBSERVATION
FORWARD BIASING
SL NO I/P VOLTAGE (Vi) Forward voltage ( Vr) Forward current (If)

REVERSE BIASING
SL NO I/P VOLTAGE(V i) Reverse voltage ( Vr) Reverse current( Ir)

CALCULATION:
Dynamic resistance

Static resistance

r = V/I = (V1-V2)/(I1-I2) R = V/I

PRECAUTION
I. II. Short circuit should be avoided. Handle the materials carefully.

CONCLUSION

EXPERIMENT NO- 4
AIM OF THE EXPERIMENT
Diode as half wave and full wave rectifier. Calculation of D.C current and ripple factor for resistive load and capacitive load.

OBJECTIVES:
I. II. Find out the average value, RMS value and Ripple factor. Trace the I/O wave forms for half wave and full wave rectifier.

APPARATUS REQUIRED
S L NO 1 2 3 4 5 6 7 COMPONENT/EQUIPMENT Micro lab kit CRO CRO probes Diode Resistor Capacitors Connecting wires IN4007 1K 470F 20 MHZ SPECIFICATION QUANTITY 1 1 2 4 1 1 As per requirement

THEORY
RECTIFIER:
When a diode is employed in the rectification process it is termed as a rectifier. The power gain is more as compared to the diodes used in the other purposes. Generally the sinusoidal and square wave signals are applied to it. There are two types of rectifires i) HALF WAVE RECTIFIER ii) FULL WAVE RECTIFIER

HALF WAVE RECTIFIER

I. During the interval 0-T/2 the polarity of the applied voltage Vi is much more than the polarity of the diode and pressures the diode to turn ON. II. So the o/p waveform in this time interval is an exact replica of i/p waveform. III. During the interval T/2-T the polarity of the i/p Vi is reversed and the polarity across the diode produces an OFF state with an open circuit equivalent. Vd.c = 0.318 Vm The process of removing one half of the i/p signal to establish a dc level is called half wave rectifier. PIV rating >=Vm

FULL WAVE BRIDGE TYPE RECTIFIER

I. Full wave rectification is a process by which 100% of d.c level can be obtained from a sinusoidal input. II. During the period 0-T/2 the diode D2 and D3 are conducting where are D1 and D4 are in OFF state. III. Since the diodes are ideal ,the load voltage Vo =Vi IV. For the ve region of the i/p the conducting diodes are D1 and D4 ,where as D2 and D3 are in OFF state. Here also Vo =Vi Vd.c =2(0.318 Vm) =0.636 Vm PIV >== Vm

FULLWAVE CENTER TAPPED RECTIFIER

I. Here an i/p signal is applied across each section of the secondary of the transformer of center type. II. During the +ve half cycle, the D1 is short circuited and D2 is open circuited and a o/p voltage is applied. III. Similarly during the ve half cycle D1 is open circuited and D2 is short circuited but maintain the same polarity for the voltage across the resistor R. PIV>=2Vm

CIRCUIT DIAGRAM
CIRCUIT DIAGRAM OF HALF WAVE RECTIFIER

CIRCUIT DIAGRAM OF FULL WAVE BRIDGE RECTIFIER

CIRCUIT DIAGRAM OF FULL WAVE CENTER TAP RECTIFIER

PROCEDURE
I. II. Connect the circuit as per the circuit diagram. Observe the I/O signal of the CRO.

III. Measure the input voltage and the average and r.m.s value of output voltage for half wave and full wave rectifier. IV. Calculate the ripple factor. V. Trace the output wave forms with and without capacitor

filter.

WAVE FORMS

INPUT AND OUTPUT OF FULL WAVE CT RECTIFIER

INPUT AND OUTPUT OF FULLWAVE BRIDGE RECTIFIER

OBSERVATION
PARAMETERS H /W RECTIFIER F/W RECTIFIER(CT) F/W RECTIFIER (BRIDGE)

Vm

Vavg

Vrms

RIPPLE FACTOR

CALCULATION

PRECAUTION:
Short circuit should be avoided. Handle the materials carefully.

CONCLUSION