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Haiying Zhao
Gate
Source
Drain
3D view of FinFET
Ideal scaling: Reduce W,L by a factor of a Reduce the threshold voltage and supply voltage by a factor of a Increasing all of the doping levels by a (W,L,tox,VDD,VTH, etc, are scaled down by a factor a) For a ideal square-law device, Id is reduced by a, but gm and intrinsic gain Gm* ro remain the same. As scaling into submicron region, Short Channel effects prevent further scaling.
Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form pn junction with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to increase depletion width
Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form pn junction with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to increase depletion width
Conclusion
To reduce short channel effects, we need to reduce Xd(channel depletion layer thickness), Xj( Junction depletion width),Xox (oxide layer thickness under gate).
High doping density results in: Lower carrier mobility; high tunneling effect which increases off-state currents; Larger depletion capacitors leading to high subthreshold swing which increases off-state currents; Larger parasitic capacitance, Cgd, Cds.
Dealing with Short Channel Effects in Fully depleted Silicon on Insulator (SOI)
Use ultra-thin film (tsi is small) as the conducting body, depletion layer is confined in the film.( Xd<= tsi).
Eliminate the junction parasitic capacitors. Cuff off the leakage current path from drain to substrate.
FinFet characteristics
Lg = 30nm
Square law? One way is using nth power law to computer the FinFet current.
rs
Source
2. 3.
Applications
1. Low power design in digital circuit, such as RAM, because of its low off-state current. 2. Power amplifier or other application in analog area which requires good linearity.