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+V
DS
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53
Small-Signal Model of a MOS
Since gate is insulated from
channel by gate-oxide input
resistance of transistor is infinite.
Small-signal parameters are
controlled by the Q-point.
For same operating point, MOSFET
has lower transconductance and
lower output resistance that BJT.
Transconductance:
g
m
= y
21
=
2I
D
V
GS
V
TN
= 2K
n
I
D
Output resistance:
D
o
I y
r
1 1
22
~ =
MOS Transistor
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MOS Transistor
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Small Signal Model: Body Effect
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Drain current depends on threshold voltage which in
turn depends on v
SB
. Back-gate transconductance
is:
0 < q < 1 is called back-gate tranconductance
parameter.
g
mb
=
ci
D
cv
BS
Q point
=
ci
D
cv
SB
Q point
g
mb
=
ci
D
cV
TN
|
\
|
.
|
|
cV
TN
cv
SB
|
\
|
.
|
|
Q point
=(g
m
q)=g
m
q
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Small-Signal Model of a MOS: High Frequency Model
Voltage dependent current source (g
m
V
gs
) models dependence of
drain current on gate-source voltage
Output resistance models dependence of drain current on drain-
source voltage (channel length modulation)
Voltage dependent current source (g
mb
V
bs
) models dependence of
drain current on bulk-source voltage (body effect)
MOS Transistor
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Useful Model
Small Signal:
+
-
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MOS Transistor
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Special Cases
Bias point
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Deep Sub-Micron Technologies
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Low-voltage High-
Speed trade-off
Fixed for the
technology and
fixed L
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Deep Sub-Micron Technologies
Some small geometry effects:
1- Gate leakage
2- Threshold voltage variation
3- Output impedance variation with V
DS
(non-linearity
)
4- Mobility degradation with vertical field
5- Velocity saturation
6- Reliability Effects (GO, Hot Carrier, NBTI, ..)
7- Stress Effects (STI, Well Proximity, ..)
Assignment 1b:
Choose one of those effects and describe it in details
(physical meaning, effect on performance, etc.)
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Deep Sub-Micron Technologies
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What about scaling of V
th
?
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Deep Sub-Micron Technologies Mobility degradation with Vertical Field
Carriers are confined to a narrower region below oxide-
silicon interface leading to more carrier scattering and hence
lower mobility
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Deep Sub-Micron Technologies Velocity Saturation
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Deep Sub-Micron Technologies Velocity Saturation
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MOS Device Models
Level 3 Model
BSIM (Berkeley Short-Channel IGFET Model)