Reactivation Noise Suppression With Sleep Signal Slew Rate Modulation in MTCMOS Circuits

Under the Guidance of Y.Baba Salauddin,M.Tech Asst.professor.

Presented By A.Reddeiah, (11741D5713)

OBJECTIVE

Multi-threshold CMOS(MTCMOS) is commonly used for supressing leakage currents in idle intregated circuits. Power and ground distribution network noise produced during sleep to active mode in MTCMOS circuits. Sleep signal slew rate modulation techniques for suppressing mode-transition noise are explored in this project.

INTRODUCTION
Multi-threshold CMOS (MTCMOS) also known as power/ground gating is most commonly used for leakage power reduction .

With more frequent transitions between ACTIVE and SLEEP modes operation to achieve more effective leakage power savings, reactivation noise has become an important concern in modern ICs.

EXISTED SYSTEM
The sub threshold leakage currents currently dominate the overall power consumption. When the MTCMOS technique is directly applied to the sequential circuit, the data in the elements is lost during the sleep mode. Single-phase sleep signal slew rate modulation and Stepwise Vgs MTCMOS techniques are gives Less performance and high power consumption.

PROPOSED SYSTYEM
The single phase sleep signal slew rate modulation technique is not suitable for fast and energy efficient power/ground gating in high performance integrated circuits. In this proposed system, Digital triple phase sleep signal slew rate modulation is used. This technique is commonly aimed to reduce power consumption, increases speed and reduces noise in MTCMOS circuits.

Sleep signal slew rate modulator techniques Three types of techniques are using to supress the noise in the MTCMOS circuits. 1.Single-phase sleep signal slew rate modulator 2.Stepwise Vgs MTCMOS. 3.Triple-phase sleep signal slew rate modulator

SINGLE-PHASE SLEEP SIGNAL SLEW RATE MODULATION

 When the voltage level of the sleep signal is lower than the threshold voltage ,the sleep transistor operates in weak inversion region. The noise induced on the ground distribution network is negligible for Vgs<Vth-sleep. After sleep signal rises above the threshold voltage of the sleep transistor, the VGND is discharged faster. Therefore noise on the real ground is increased.

Stepwise Vgs MTCMOS

 A stepwise Vgs MTCMOS circuit is activated in two steps as follows. The sleep signal transitions from 0V to an intermediate voltage level Vx (0v < Vx < Vdd) during the first step of a reactivation event. The sleep transistor is weakly activated with a low gate voltage (Vx).

Triple phase sleep signal slew rate modulation

An alternative triple-phase sleep signal slew rate modulation (TPS) technique is to suppress the reactivation noise while accelerating the reactivation process in MTCMOS circuits.

sleep transistor produces negligible noise in the weak inversion region of operation (when Vgs < Vth_sleep).

 The sleep signal is preferred to rise faster from 0 V to the threshold voltage of sleep transistor in order to reduce the overall reactivation time without producing significant noise.
The sleep signal should be therefore subsequently decelerated as the gate voltage level reaches the threshold voltage of sleep transistor.

RESULTS

Applications
Power, Energy & Industry applications. Robotics & Control Systems.

CONCLUSION
Sleep signal slew rate modulation techniques are used to reducing mode transition noise in MTCMOS circuits.
A Digital triple-phase sleep signal slew rate modulation technique is mainly preferred. The overall reactivation time ,energy consumption is lower compared to stepwise vgs and single phase techniques.

FUTURE SCOPE
We can implement Multi threshold technique for Silicon On Insulator (SOI) and Fully Differential Silicon On insulator (FD SOI).

THANK U