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Table of Contents
The Bipolar Junction Transistor_______________________________slide 3 BJT Relationships Equations________________________________slide 4 DC and DC _____________________________________________slides 5 BJT Example_______________________________________________slide 6 BJT Transconductance Curve_________________________________slide 7 Modes of Operation_________________________________________slide 8 Three Types of BJT Biasing__________________________________slide 9 Common Base______________________slide 10-11
Common Emitter_____________________slide 12 Common Collector___________________slide 13 Eber-Moll Model__________________________________________slides 14-15 Small Signal BJT Equivalent Circuit__________________________slides 16 The Early Effect___________________________________________slide 17 Early Effect Example_______________________________________slide 18 Breakdown Voltage________________________________________slide 19 Sources__________________________________________________slide 20
Kristin Ackerson, Virginia Tech EE Spring 2002
p C
Cross Section
Cross Section
B B
Schematic Symbol
Collector doping is usually ~ 106 Base doping is slightly higher ~ 107 108 Emitter doping is much higher ~ 1015
npn
IE = IB + IC
pnp
IE = IB + IC
Note: The equations seen above are for the transistor, not the circuit.
Kristin Ackerson, Virginia Tech EE Spring 2002
DC and DC
= Common-emitter current gain = Common-base current gain = IC = IC
IB
IE
+1
1-
Note: and are sometimes referred to as dc and dc because the relationships being dealt with in the BJT are DC.
Kristin Ackerson, Virginia Tech EE Spring 2002
BJT Example
Using Common-Base NPN Circuit Configuration C Given: IB = 50 A , IC = 1 mA
VCB B VBE
+ _ + _
IC IB
Find:
IE , , and
= IC / IB = 1 mA / 0.05 mA = 20
= IC / IE = 1 mA / 1.05 mA = 0.95238 could also be calculated using the value of with the formula from the previous slide. = = 20 = 0.95238 +1 21
Kristin Ackerson, Virginia Tech EE Spring 2002
IC = IES eVBE/VT
Transconductance: (slope of the curve)
6 mA
gm = IC / VBE
IES = The reverse saturation current of the B-E Junction. VT = kT/q = 26 mV (@ T=300K)
4 mA
2 mA
VBE
Kristin Ackerson, Virginia Tech EE Spring 2002
Modes of Operation
Active:
Most important mode of operation Central to amplifier operation The region where current curves are practically flat
Cutoff:
* Note: There is also a mode of operation called inverse active, but it is rarely used.
input
= VEB & IE
Common-Base
Although the Common-Base configuration is not the most common biasing type, it is often helpful in the understanding of how the BJT works. Emitter-Current Curves IC Saturation Region Active Region IE
Cutoff IE = 0
VCB
Kristin Ackerson, Virginia Tech EE Spring 2002
Common-Base
Circuit Diagram: NPN Transistor C IC
VCE
IE
VCB The Table Below lists assumptions that can be made for the attributes of the common-base biased circuit in the different regions of operation. Given for a Silicon NPN transistor. Region of Operation IC VCE VBE IB
+ _
VBE
VCB
VCB
VBE
C-B Bias E-B Bias
Active Saturation
Cutoff
IB Max
~0
0V
Rev. Fwd.
=VBE+VCE 0V
+ _
Common-Emitter
Circuit Diagram VCE IC
Collector-Current Curves IC
VC
C
+ _
IB
Active Region
Region of Description Operation Active Small base current controls a large collector current
IB
VCE
Saturation Region Cutoff Region IB = 0
Common-Collector
Emitter-Current Curves The CommonCollector biasing circuit is basically equivalent to the common-emitter biased circuit except instead of looking at IC as a function of VCE and IB we are looking at IE. Also, since ~ 1, and = IC/IE that means IC~IE
IE
Active Region
IB
VCE
Saturation Region Cutoff Region IB = 0
Kristin Ackerson, Virginia Tech EE Spring 2002
IE
IC
RIC
RIE
IF IB B
IR
IC = FIF IR IE = IF - RIR
IB = IE - IC
IF = IES [exp(qVBE/kT) 1]
IR = IC [exp(qVBC/kT) 1]
If IES & ICS are not given, they can be determined using various BJT parameters.
Kristin Ackerson, Virginia Tech EE Spring 2002
r = ( + 1) * VT IE
@ = 1 and T = 25C
iE
E
Recall:
r = ( + 1) * 0.026 IE
= IC / IB
IC
IB
VCE
IB
b)
IC = IC
VCE + 1 VA
= 2.5x10-3
15 + 1 80
= 2.96 mA
IC = 2.96 mA
Kristin Ackerson, Virginia Tech EE Spring 2002
Breakdown Voltage
The maximum voltage that the BJT can withstand.
BVCEO =
The breakdown voltage for a common-emitter biased circuit. This breakdown voltage usually ranges from ~20-1000 Volts. The breakdown voltage for a common-base biased circuit. This breakdown voltage is usually much higher than BVCEO and has a minimum value of ~60 Volts. Breakdown Voltage is Determined By: The Base Width Material Being Used Doping Levels Biasing Voltage
Kristin Ackerson, Virginia Tech EE Spring 2002
BVCBO =
Sources
Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated. Prentice Hall, New Jersey: 2001. (pp 84-153)
1
Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and Simulation. Plenum Press, New York: 1998. Neamen, Donald. Semiconductor Physics & Devices. Basic Principles. McGraw-Hill, Boston: 1997. (pp 351-409)
Web Sites
http://www.infoplease.com/ce6/sci/A0861609.html