Field Effect Transistor

FET

Classification of FET

JFET Schematic Symbols

N-channel JFET

Water Analog for JFET

Operation of n-channel JFET

Cont.

VGS = 0 V; VDS = Vp

VGS = -V; No voltage applied B/w the Drain & Source

VGS = -1V, VDS > 0 V

JFET Working

Operation of n-channel JFET Summary

Operation of n-channel JFET Summary

Drain Characteristics

Drain Characteristics of n channel JFET

Cont.

Important terms
1. Pinch-off Voltage (Vp) 2. Shorted-Gate Drain Current (IDSS) or Drain to Source current with gate shorted 3. Gate Source Cut-off Voltage (Turn off voltage)(VGS (off))

Drain Characteristics
There are 4 important region: 1. Ohmic Region 2. Saturation Region 3. Breakdown Region 4. Cut-off Region

Transfer Characteristics of n-channel JFET

Transfer Characteristics

Amplification Factor ()
It is the ratio of change in drain-source voltage (VDS) to the change in gate-source voltage (VGS) at constant drain current (ID)

Other Formulas

P channel JFET Working

P channel JFET Transfer & Drain Characteristics

Important Relationships (JFET versus BJT)

JFET as Voltage Variable Resistance

JFET as Voltage Variable Resistance

The resistance of the device b/w drain & source for VDS < VP is a function of the applied voltage VGS

Merits & Demerits of JFET

Merits Demerits

Very High Input Resistance Better Thermal Stability Produces less noise Long Life & Small Size Higher power gain Relatively immune to radiation

Low Voltage gain compared to transistor Amplifier Expensive Low gain bandwidth product

JFET
Unipolar device Voltage Controlled Device High Input Resistance (order of M) Doesnt Suffer from minority carrier storage effects (higher switching speeds &
cut off frequencies)

BJT
Bipolar device Current Controlled Device Input Resistance Low Compared to JFET Suffers from minority carrier storage effects (lower switching speeds & cut off
frequencies)

Negative Temperature Coefficient at high Positive Temperature coefficient at high current levels ( prevents from thermal current levels (leads to thermal breakdown)
breakdown). Better thermal Stability

Less noisy than BJT or Vacuum Tube Simpler to Fabricate as an IC & occupies
less space on IC chip than BJT

More Noisy than a JFET Comparatively difficult to Fabricate as an IC and occupies more space on IC chip Cheaper to produce than FETs Performance is degraded by neutron radiation Good Fanout & High Power Consumption

FET are expensive than BJT FET can tolerate a much higher level of radiation Poor Fanout & Low Power consumption

Fan-out Meaning

Application of JFET
Used as a Buffer Amplifier, low noise Amplifier Used as a Voltage Variable Resistor Used in digital Circuits, in Computers Used in Oscillator circuits Used in low frequency amplifiers in hearing aids & inductive transducer

Small Signal Low Frequency JFET Model

Small Signal High Frequency JFET Model

Reference
Electronic Devices & Circuits by S Salivahanan Electronic Devices & Circuit Theory by Robert Boylestad and Louis Nashelsky