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In April 2009, Texas Memory System announced a 5TB RamSan-620. It has a throughput of 3GB/s and a sustained random read/write of 250,000 (IOPS).
On May 4, 2009, DDRdrive LLC introduced th DDRdrive X1. It integrates both 4GB DRAM and 4GB NAND for achieving up to 300,000(IOPS), a power efficiency of 30,000+ IOPS/W.
Cached Flash
gate
No flow of current Positively charged float gate Flow of current
flash internals
An example of SSD
1 die = 4 planes 1 plane = 2048 blocks 1 block = 64 pages 1 page = 4KB Dies can operate independently Reading and programming is performed on a page basis, erasure can only be performed on a block basis.
Offers extremely high inputs / outputs / second (IOPS) Uses less power and less space