BSIM1

WHY?

Industry switched to BSIM models

� Berkeley Short channel Igfet Model
� About 10 years ago industry quit using
MOS level 1
� Was a big impact on students at first
job(conversion form one level to another)
To make hand calculation easy extract
some parameter.
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 How?
All parameters have Length and width modifiers
Using equation,

Where P’ is BSIM electrical parameter.

L-DL is effective channel length
W-DW is effective channel width
LP is length modifier
WP is width modifier
all above are electrical parameter assoi with P’

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BSIM DC equation

Threshold voltage
 The drain current
 The subthresod current

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The Thresold voltage

Remember that this equation is calculated using,

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 Much worse than the old threshold Equation
Not constant for a given device size
Not easily worked by hand
Simplified equation,

By neglecting the effect of device and lower

drain induced barrier resulting from non zero
VDS

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BSIM DC equation

Threshold voltage

The drain current

The subthresod current

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 Drain current

Cut off : VGS < VTHN (ID = 0, neglecting STC)

Linear : VDS < VGS-VTHN > 0

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U0Z’ and U1z’ accounts for mobility degradation effect

X2UO, sens. of trans. field mobility degrad. eff. subs. bias LX2UO, WX2UO
X2U1 sens. of velocity saturation effect to substrate bias LX2U1, WX2U1
X3U1 sens. of vel. sat. eff. on drain bias at Vds=VddL LX3U1, WX3U1
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Saturated Current model

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This equation does not depend on VDS

(are we wrong?)

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channel length modulation

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MUO , neglecting length and width dependence by
using linear interpolation between the mobility at
VDS=0(MUZ) and VDS=VDD(MUS)

Output resistance of MOS is given by,

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Parameter λm is called mobility modulation
parameter.

Thus change in ro

MUS( VDS=VDD) < MUZ(VDS=0)

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For short channel length λc

For long channel length λm

In digital application we assume both to

be zero

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BSIM DC equation

Threshold voltage
The drain current

The subthresod current

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 Subthresold current VGS< VTHN

 The transistor doesn’t turn off suddenly

 As Vgs nears Vth, it turns on gradually
 Two current components

Weak Inversion
The current we have ignored
Strong Inversion
The part we said was 0 before

This current is due to diffusion between drain and source

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Iweak

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 Small currents, used in low power
operation
 Sensitive to Vgs, exponentially

�Sensitive to Temperature
 Gradual change

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 If Iexp << Ilimit
Intersection of slopes of current curves
VA (Early Voltage…)

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The output resistance of a MOSFET, subthresold and SI region ,

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Increases by 10X every 60-100mV change in
VGS-VTHN Increase VGS or lower VTHN !!!!

S = n(kT/q)ln(10)

depends on n and T

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Thanks

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