Derivation of f

T
And f
MAX
of a MOSFET
Derivation of f
T

(MOSFETs)
The unity current gain frequency* (aka
cutoff frequency)
Defined under the condition that the output
is loaded with an AC short.
f
T
does not depend on R
g
and r
o

Derivation of f
T

(MOSFETs) (Continued)
) ( 2
1
) (
) ( ) (
) (
gd gs
m
T
I
gd gs m
gd gs
m
gd gs
gd m
ins
os
I
gd gs gs ins
gs gd gs m gd gs m os
C C
g
f
A when
j
C C g
C C s
g
C C s
sC g
i
i
A
C C sV i
V sC V g i V g i
+
=
=
+
=
+
~
+

=
+ =
= =
t
e
Assume the zero (sCgd) is smaller compared to gm.
e
e
e j j
C C g
A
T
gd gs m
I
=
+
=
) (
f
T

with Parasitic R
S
and R
D

Derivation of f
T

(MOSFETs) (Continued)
(R
S
and R
D
are included)
Millers
Approximation
| |
| |
) (
) ( 1
2
1
) ( 1
) ( // ) (
D S gd
m
gd gs
m
D S m gd gs
T
D S m gd M
D S m o D S m
gs
d
V
R R C
g
C C
g
R R g C C
f
R R g C C
R R g r R R g
V
V
A
+ +
+
=
+ + +
=

+ + =
+ ~ + = =
t
Derivation of f
MAX

(MOSFETs)

f
MAX
* is the frequency at
which the maximum power
gain =1 (*aka maximum
oscillation frequency)
f
MAX
is defined with
its input and output ports
conjugate-matched for
maximum power transfer
So, we need to know the
input and output impedance
to define the input and
output power as well as
achieve the max power
transfer matching condition.
Derivation of f
MAX

(MOSFETs)

gd gs T
gd m
T
o
gd gs
gd m
o
out
gd gs
gd
t
gs
gs m dg
dg gs m
o
t
t
t
t
out
C C C
C g
C
r
C C
C g
r
Z
C C
C
V
V
V g i Assume
i V g
r
V
i
i
V
Z
+
=
+
+
=
+
~ <<
+ + =

//
1
1
&

g
gs
g in
R
C j
R Z ~ + =
e
1
At high frequency (close to
fmax), we can assume that


So, R
g
is independent of R
L
0
1
~
gs
C je
2
os
o out L
i
i R R = =
For the matching conditions,
g
s
ins in g S
R
V
i i R Z
2
= = =
Derivation of f
MAX

(MOSFETs) (Continued)
Conjugate match at the input: Conjugate match at the output:
Power Gain (Under Conjugate Match)
o
g
g gd T
T
MAX
gd T
o
gd gs
gd m
o
L
g
L
T MAX
p
g
L T
g
L
ins
os
in in
out o
p
r
R
R C f
f
f
C f
r
C C
C g
r
R
R
R
f f f
G when
R
R
f
f
R
R
i
i
R i
R i
G
+
=
+
=
+
+
=
= =
=
|
|
.
|

\
|
|
|
.
|

\
|
=
t
t
2
2
1
2
1
1
1
1
2
1
1
4
1
4
1
2 2
2
2
1
2
2
1

Using the
definition of f
T
Derivation of f
MAX
(MOSFETs)(Continued)
(R
S
and R
D
are included)
s g in
R R Z + =
Hence, replace R
g
by R
g
+R
s
o
s g
s g gd T
T
MAX
r
R R
R R C f
f
f
+
+ +
=
) ( 2
2
1
t
For high frequency condition,
C
gs
short
w/o (R
S
+R
D
) term

w/ (R
S
+R
D
) term

Derivation of f
T
And f
MAX
of a BJT
Derivation of f
T

(Bipolar)
For Bipolar Transistors,

BE
DE
DE
dBC
DE dBE
m
T
o be gs
gd gs
dv
dQ
C
C C
C C C
C C
g
f
r V V
C C C C

=
+
+
=

t
t
t
t

) ( 2
C
DE
is due to minority
carriers caused by FB
Derivation of f
T

(Bipolar) (Continued)
BC BE B E DE
Q Q Q Q Q + + + =
Q
E
= minority holes stored in emitter
Q
B
= minority electrons stored in base

Q
BE
= electrons induced by the current
through the depletion region of BE-junction

Q
BC
= electrons induced by the current
through the depletion region of BC-junction
Derivation of f
T

(Bipolar) (Continued)
F
m
dBC dBE
m
dBC DE dBE
m T
m F
BE
C
F
BE
DE
DE
s
BC
s
BE
B
B
E
E
BC BE B E
C
DE
F
g
C C
g
C C C
g
C C
f
g
dv
di
dv
dQ
C
X X
D
W
D
W
t t t t
di
dQ
t
t
t t
v v q q|
t
t
+
+
=
+ +
=
+
=

= =
+ + + = + + + =
2
1
2 2 2 2
2 2
Width of Neutral Region
Width of
Depletion
Region
1 > q
BE
X
if drift current is considered.
is greater than because of reverse-biasing.
BC
X
Derivation of f
T

(Bipolar)
(R
S
and R
D
are included)
For bipolar, the result is similar.
The only difference is that the term must be
included.

| |
| |
) (
) (
) ( 1
2
1
) ( 1
) (
C E dBC F
m
dBC dBE
C E dBC
m
dBC F m dBE
m
C E m dBC DE dBE
T
C E m dBC M
C E m
be
c
V
R R C
g
C C
R R C
g
C g C
g
R R g C C C
f
R R g C C
R R g
V
V
A
+ + +
+
=
+ +
+ +
=
+ + + +
=

+ + =
+ ~ =
t
t
t


F
t
Derivation of f
MAX

(Bipolar)

b bc
T
o
g
b bc T
T
MAX
R C
f
r
R
R C f
f
f
t
t
8
2
2
1
=
+
=
For bipolar transistors, there is no term.
o
r