Since the development of the transistor, continuous

research in the field of semiconductors has provided many

additional semiconductor devices. Some if these devices have
been adopted to applications that were normally impossible.
These devices, now considered as innovations in military and
commercial equipment, may become as commonplace as the
junction transistor is today. Indications are that development
and applications for solid state devices will continue to expand.
In all cases, where other devices were previously used, the solid
state devices are smaller, more efficient, less expensive, and
more reliable.
Two of these devices, the uni-junction transistor (UJT)
and the silicon controlled rectifier (SCR), will be discussed in
detail during this lesson.
Special Purpose Devices
2 Types; Silicone Controlled Rectifier, [SCR]
Unijunction Transistor, [UJT]
Both are classified in the family of electronic switches called,
Thyristors.
Electronic Switches are; 1. Faster
2. Less Expensive
3. Last Longer
4. Have No Arc or Spark as do
manual switches & relays.
Applications SCR; 1. High Voltage & Current
>2000 V & >1500 A
2. Speed Controls for motors
Applications UJT; 1. Trigger for an SCR
2. Oscillator
Special Purpose Devices
SCR
SCR, Gated ON
G
A
K
P
P
N
N GATE, G
ANODE, A
CATHODE, K
4 Layer PNPN Device, W/3 PN Junctions.
Looks like a diode, acts like a diode, current flows like a diode, W/ an
extra element called a Gate.
A small + DC or + spike applied to the Gate will turn on [Gated On] the
device provided forward biasing is set on the Anode & Cathode. Once
ON, Stays ON.
To Turn OFF, forward biasing must be removed or reversed Biased.
The GATE WILL NOT SHUT DOWN conduction. [Latching Current must be
removed].
Special Purpose Devices
SCR; Silicone Controlled Rectifier.
SCR, Power
G
A
P
P
N
P
N
N
K
P
P
N
P
N
N
Q1
Q2
G
A
K
P
P
N
P
N
N
G
A
K
P
P
N
N
A
G
Q2
Q1
K
1
3
2
+
-
I V
Special Purpose Devices
SCR; Gated On, Latched On.
PC; 52A
Special Purpose Devices
SCR; Efficient Power use.
P = I X E

P
LAMP
= I
LAMP
X E
LAMP

P
LAMP
= 50 ma X 11v

P
LAMP
= 550 mW
P = I X E

P
SCR
= I
SCR
X E
SCR

P
SCR
= 50ma X 1v

P
SCR
= 50 mW
LAMP
SCR
12VDC
Special Purpose Devices
SCR; Control Ckt PC 52A. Operate Mode.
O
N
E
R2
10 K
R1
1K
R3
100K
RESET
OPERATE
S2
C1
1f
1
2
3
4
5
+DC
S1
- 9
VDC
+12
VDC
SCR
+
+
L1
I
Reset
PC 52B
Special Purpose Devices
SCR; Control Ckt PC 52A. Reset Mode.
O
N
E
R2
10 K
R1
1K
R3
100K
OPERATE
RESET
S2
C1
1f
1
2
3
4
5
+DC
S1
- 9
VDC
+12
VDC
SCR1
+
-
L1
I
Closing S2 Grounds the +
plate on Cap C1 causing it
to discharge thus Reverse
Biases SCR1, ceasing
Conduction.
Special Purpose Devices
SCR; Ckt PC 52B. Conducting.
G
SCR1
2N1596
R2
100
R3
100 K
R1
10 K
C1
4.7mfd
1mfd
C2
1
2
4
5
6
7
3
L1
PC 52B, Cutoff
Special Purpose Devices
SCR; Ckt PC 52B. Cutoff.
G
SCR1
2N1596
R2
100
R3
100 K
R1
10 K
C1
4.7mfd
1mfd
C2
1
2
4
5
6
7
3
L1
UJT
Continue UJT
P
N
N
E
B
2

B
1

E
BASE 1
BASE 2
R
B2
R
B1
Base 2
Base 1
Emitter
NITA LESSON;
Per Instructor Discretion.
Special Purpose Devices
UJT; Unijunction Transistor
Continue, UJT Ops
Special Purpose Devices
UJT; Unijunction Transistor
The position of the emitter fusing on the N material determines how
much voltage is required to turn on the UJT @ the Emitter.
E
BASE 2
BASE 1
RB2
RB1
E
R
B2
R
B1
BASE 2
BASE 1
P
N
N
E
B
2

B
1

Emitter to Base 1.
R, V
Emitter to Base 1.
R, V
Current, UJT is
Conducting
Special Purpose Devices
UJT; Oscillator PC 51 . Operation, C1 Charge.
0 V
0 V
0 V
C1
Charges
C1
Discharges
1
3
5
Q1
2N4891
2
4
R3
470
R4
100
R1
18 K
R2
100
K
C1
.0015 F
12
VDC
The RC TC
determines
Charge
Time &
Frequency
+
C1 Discharge
Trouble Shoot
Special Purpose Devices
UJT; Oscillator PC 51 . Operation, C1 Discharge.
Output; + & - Spike. Saw tooth @ TP3.
1
3
5
Q1
2N4891
2
4
R3
470
R4
100
R1
18 K
R2
100
K
C1
.0015 F
12
VDC
The RC TC
determines
Charge
Time &
Frequency
+
0 V
0 V
0 V
C1
Charges
C1
Discharges
+ SPIKE
Output @
TP2
- SPIKE
Output @
TP4
Special Purpose Devices
UJT; Oscillator PC 51, 2 Ckt. What is the Malfunction?
NO Output
R1
R2
C1
R3
R4
5
3
1
.0015f 25f C2
100K
R5
R6
R7
R8
2N4891
Q1 Q2
2N4891
100
470 470

47K

1M
2
4
8
7
9
10
O
5.01 VDC
10.7 VDC
.214 VDC
10.7
VDC
0
VDC
.214
VDC
NO Output
Terms
SCR; Silicon Controlled Rectifier.
Referred to as a Gated Diode.
To Turn ON, F Bias + on Gate Cathode junction.[ Gated On]
To Turn OFF, R Bias Anode/ Cathode thus removes
Latching current.
Latching Current, the minimum amount of current that can flow
through an SCR and hold it in the Break over condition or
conduction.
UJT; Unijunction Transistor.
Referred to as a Double Based Diode.
Location of the emitter joined to the N material [PN Junction]
determines the amount of voltage required @ the emitter to cause
conduction through the Emitter.
3 Waveforms Produced, + & - Spike, Saw tooth.
Main Use, Oscillator & Switching Trigger.
SCR & UJT; Both in the Family called Thyristors, [Electronic Switches].
Special Purpose Devices
SCR & UJT; Terms.
Review Questions
1. One of the main uses of a UJT is as a _________,
__________ .
2. Why is the UJT often used instead of a conventional transistor?
__________________________________________________ .
3. The UJT is also called a _________ _____ ______ .
4. What is the Basic purpose of a SCR? __________ ________ .
5. How is an SCR turned on ? __________________________ .
6. What family of transistors does the SCR & UJT belong to ?
__________ .
7. Draw the schematic symbol for a UJT & SCR.


8. How many PN Junctions does the SCR contain ? ____ .
9. How is an SCR turned Off ? __________ _______
__________.
Special Purpose Devices
Review Questions;
Answers; 1- 9
Answer; 10
Special Purpose Devices
Review Questions;
10. Refer to PC 51; The following DC voltages are present: TP4 = 10.7 VDC,
TP3 = 0 VDC, TP2 = .21 VDC. What is the Malfunction ?
a. C
1
Open
b. R
1
Open
c. R
2
Short
d. Q
1
Open


1
3
5
Q1
2N4891
2
4
R3
470
R4
100
R1
18 K
R2
100
K
C1
.0015 F
12
VDC
PC 51