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Diffusion
Before diffusion
After diffusion
Diffusion faster in
- Open crystal structures
Diffusion slower in
- Close-packed structures
- Materials with covalent bonding
- Larger diffusing atoms
- Higher density materials
Examples/applications
Adding dye
Mixing
Homogenization
Time
Diffusion: Examples/Applications
Alloy making
Diffusion Mechanisms
Interstitial mechanism
Vacancy Mechanism
Vacancy diffusion
-
--
--
Vacancy Diffusion
Atomic migration (Diffusion) occurs by a mechanism
of vacancy migration. Note that the overall direction of
material flow (the atom) is opposite to the direction of
vacancy flow
Interstitial Diffusion
Interstitial Diffusion
Position of interstitial
after diffusion
Examples/applications
Diffusion in solids
- Alloy preparation
- Heat treatment (phase transformation,
homogenization)
- Surface treatment
- Material synthesis
Carburization
Surface coating
- Maximum concentration of
a particular diffusing
impurity always at the
surface
Diffusion Flux
The flux of diffusing atoms
Used to quantify how fast diffusion occurs
Defined as
- The number of atoms diffusing through per
unit area per unit time (Atoms/m2-second)
- The mass flux (mass of atoms) diffusing
through unit area per unit time, (kg/m2-sec).
J = M/A.t = 1/A (M/t)
where J: the diffusion flux, M: the mass of atoms
diffusing through the area A during time t
Modes of Diffusion
Steady-State Diffusion
Gas
pressure
PB
PA: constant
Gas
pressure
PA
Direction of
diffusion
Surfae area of
diffusion: A
C/x = (CB-CA)/(XB-XA)
J = -D (dC/dX)
PA >PB
or
2
surface area time
cm s m2s
Fe
plate
Type of bonding
Diffusion mechanism
- Substitutional vs interstitial
Temperature
- Higher diffusivity with increasing temperature
Type of crystal structure of the host lattice
D = Do e(-Q/RT)
D = diffusion coefficient [m2/s]
Do = pre-exponential [m2/s]
Qd = activation energy for diffusion [J/mol or eV/atom]
R = gas constant [8.314 J/mol-K]
T = absolute temperature [K]
Reciprocal Temperature, oC
Diffusion coefficient
Diffusing
species
Host
Metal
Do(m2/s)
Activation energy, Q
kJ/mole
eV/atom
Calculated D values
Temp,oC
D (m2/s)
t1<t2<t3
t3
t1
t2
Distance
D
t x x
in the usual case where D is
independent of Concentration
cx
2 cx
D 2
t
u
Boundary Conditions:
at t = 0, C = Co for 0 x
at t > 0, C = CS for x = 0 (const. surf. conc.)
C = Co for x =
Boundary Conditions
For t = 0, C = Co at 0 < x
For t > 0, C = CS at x = 0
CS = surface concentration
Co = initial uniform bulk concentration
Cx = concentration of element at distance x from
surface at time t
x = distance from surface
D = diffusivity of diffusing species in host lattice
t = time
erf = error function = erf[(x/2(Dt)] is the
Gaussian error function this is like a continuous
probability density function from 0 to x/2(Dt)
Mathematical Solution:
C x ,t Co
x
1 erf
Cs Co
2 Dt
CS
C(x,t)
z
0
y 2
dy
Co
l 10 Dt
The following assumptions are implied for a good solution:
1.
Before diffusion, any of the diffusing solute atoms in the solid are
uniformly distributed with concentration of C0.
2.
3.
The time is taken to be zero the instant before the diffusion process
begins.
Example
The carburization of a steel gear at a temperature of 1000oC in gaseous CO/CO2 mixture,
took 10 hours. How long will take to carburize the steel gear to attain similar
concentration conditions at 1200oC? For C in iron, D = 0.2 exp{ -34000 / 2T} cm2/s
(C) For the problem (B) compute the activation energy for the
diffusion of Cu in Al.
C( x, t ) Co
x
1 erf
Cs Co
2 Dt
Solution (cont.):
C( x ,t ) Co
x
1 erf
Cs Co
2 Dt
t = 49.5 h
Cx = 0.35 wt%
Co = 0.20 wt%
x = 4 x 10-3 m
Cs = 1.0 wt%
C ( x, t ) Co 0.35 0.20
x
1 erf
1 erf ( z )
C s Co
1.0 0.20
2 Dt
0.1875 1 erf ( z )
erf ( z ) 0.8125
erf(z) = 0.8125
Solution (cont.):
We must now determine from Table 5.1 the value of z for which the
error function is 0.8125. An interpolation is necessary as follows
z
erf(z)
0.90
z
0.95
0.7970
0.8125
0.8209
z 0.90
0.8125 0.7970
z 0.93
And now solve for D:
x
z
2 Dt
x2
4z 2t
3
2
x2
(
4
x
10
m)
1h
2.6 x 10 11 m2 /s
4z 2t ( 4)(0.93 )2 ( 49 .5 h) 3600 s
The solution requires the use of the erf function which was
developed to model conduction along a semi-infinite rod
Qd
T
R(lnDo lnD )
142,000 J/mol
T
(8.314 J/mol- K)(ln 2.0x105 ln 2.6x1011 )
142,000 J/mol
142,000 J/mol
T
Following Up:
In industry one may wish to speed up this
process
This can be accomplished by increasing:
Temperature of the process
Surface concentration of the diffusing species
D1260 was 2.6x10-11m2/s at 987C while the process took 49.5 hours
How long will it take if the temperature is increased to 1250 C?
D1250C D0e
QD
142000
RT
2.0 10 e
8.311523
4.8 hr
10
2.68 10
10
m2
D987 C t987 C
D1250C
C1 C1
C2
x1
C2
dC
J D
dx
D is the diffusion coefficient
x2
dC C C2 C1
if Behavior is linear
dx x
x2 x1
Example (cont).
J -D
glove
C1
paint
remover
tb
2
6D
skin
Data:
C2
x1 x2
dC
C C1
D 2
dx
x2 x1
-8
J (110 x 10
cm -s
how long will it take to get 0.5g of M-C onto the hands?
Flux
25cm 2 1.16 10 5 g
cm -s
2.9 104 g
2.9 10 g
1724s 0.48 hr
Example 3 (cont).
Solution assuming linear conc. gradient
glove
2
tb
6D
C1
paint
remover
skin
C2
x1 x2
x2 x1 0.04 cm
tb
(0.04 cm)2
-8
(6)(110 x 10
240 s 4 min
cm /s)
Example: If, at 400oC, the concentration of vacancies in aluminum is 2.3 x 10-5, what is
the excess concentration of vacancies if the aluminum is quenched from 600oC to room
temperature? What is the number of vacancies in one cubic m of quenched aluminum?
Given, Es= 0.62 eV; k = 86.2 x 10-6eV/K, ; rAl= 0.143 nm
rate Ce
Q
RT
where:
C is a constant (rate w/o temperature)
Q is activation energy
T is absolute temperature
(b) versus 1/T based on the data of part (a). The slope of the plot (Ev/k)
indicates that 0.76 eV of energy is required to create a single vacancy in
the aluminum crystal structure. (From P. G. Shewmon, Diffusion in Solids,
McGraw-Hill Book Company, New York, 1963.)