ELECTRONICS DEVICE

Instructor

Source

:
:
:
:

Prof. Dr. Ir. Djoko Hartanto, M.Sc.

Arief Udhiarto, S.T, M.T
Dr. Ratno Nuryadi, M.Eng.
Professor Nathan Cheung, U.C. Berkeley

Schedule
Lectures:

K.108

Tue. 13:00-14.50 AM

Electrical Engineering Department

University of Indonesia

Relation to Other Courses

Prerequisite:
Simple

pn-junction, BJT and MOSFET theory;

BJT and MOSFET circuit applications.
Familiarity with the Bohr atomic model
Relation

to other courses:

Electronics

Engineering

Electrical Engineering Department

University of Indonesia

Reading Material
Primary Text
:
Semiconductor Device Fundamentals : R. F. Pierret
(Addison Wesley, 1996)
Semiconductor Integrated Circuit Processing
Technology : Runyan, Bean (Addison Wesley,
1996)
References Text:
Solid State Electronic Devices 4th Edition: B. G.
Stretman, S. Banerjee (Prentice Hall, 2000)
Device Electronics for Integrated Circuits 3rd
Edition: R. Muller, T. Kamins (Wiley & Sons, 2003)
Electrical Engineering Department
University of Indonesia

Electronic Device Team

1. Course
2. Course Code
3. Instructor
4. Class System

: Electronics Device
: EES210804 SKS: 4 Semester: 6
: Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH)
Arief Udhiarto, S.T, M.T (AU)
Dr. Ratno Nuryadi, M.Eng. (RN)
: Single

5. Courses Objective : mastering in basic concept of integratedcircuit operation devices specially in siliconintegrated circuits and its Processing
Technology
6. Grading(%)

Electrical Engineering Department

University of Indonesia

Pre Test
1.
2.

3.

What do you know about insulator,

conductor, semiconductor?
What is the different between unipolar
device and bipolar device?
What do you know about MOSFET?

10 Minutes Only
Electrical Engineering Department
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Course Organization

Semiconductor Physics;
Metal-Semiconductor Contact

PN-Junction

Bipolar Junction Transistor

IC Processing

MOSFET
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Overview of IC Devices and

Semiconductor Fundamentals
Reading Assignment : Pierret Chap 1, Chap 2

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Applications of Semiconductor
Devices

MOSFET
source

Semiconductor
Devices

gate
drain

n+

n+
p - Si

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Evolution of Bipolar Junction Transistors

Point Contact BJT

1947
SiGe BJT
2000

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Si Nanowire BJT
2003

10

Today and Tomorrow

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11

State-of-the-art Transistor Size

1m = 10-6m = 10-4 cm = 1000 nm
1 nm =10

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12

Advantages of Technology Scaling

More dies per wafer, lower cost
Higher-speed devices and circuits

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13

Roadmap of Transistor

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Electrical Engineering Department

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Electrical Engineering Department

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Moore Law (Gordon Moore 1965)

The number of transistors in a

chip will be doubled every 18
months

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Bulk Si Wafer to IC Chip

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CZ (Czochralski) Crystal Growth

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Electrical Engineering Department

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History

1904 Vacuum Tube

1925 Concept of Field Effect Transistor
1947 Bipolar Transistor
1958 Bipolar IC
1959 MOS Transistor
1961 IC-MOS Technology
1972 MOS Microprocessor

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Conductivity in Solid
1018

Resistivity
108
Glass
Pure
Diamond

[ cm]
10-3
Ag

Si

Cu

GaAs

Al

Quartz

10-18

10-8

10-8
Conductivity

Insulators

103
[ cm] -1

Semiconductors

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108
Conductors

22

Semiconductors
Elemental

Semiconductor

Si, Ge

Compound

Semiconductor

GaAs - Gallium arsenide

GaP - Gallium phosphide
AlAs - Aluminum arsenide
AlP - Aluminum phosphide
InP - Indium Phosphide
ZnO Zinc Oxide
CdSe Cadmium selenide
Etc.

Alloys
Si1-xGex, AlxGa1-xAs
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Electrical Engineering Department

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Important Unit Cells

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25

Crystallographic Planes and Si

Wafers

Silicon wafers are usually cut along the (100)

plane with a flat or notch to orient the wafer
during IC fabrication

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Miller Indices
Crystallographic Notation

h: inverse x-intercept
k: inverse y-intercept
l: inverse z-intercept

(Intercept values are in multiples of the lattice constant;

h, k and l are reduced to 3 integers having the same
ratio.)
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Crystallographic Planes

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Si (100)

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Si (111)

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Si (100) and Si (110)

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Si (100) and Si (110)

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Silicon Atom
1s, 2s, 2p orbitals filled by 10
electrons
3s, 3p orbitals filled by 4
electrons
The Si Atom

4 nearest neighbors
unit cell length = 5.43
5 1022 atoms/cm3

The Si Crystal

diamond cubic structure

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Bohr Model

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Electrical Engineering Department

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Conduction Band and Valence Band

Electron
Potential
Energy

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The Simplified Energy Band

Diagram

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Semiconductors, Insulators, and

Conductors

Totally filled band and totally empty bands do not allow

current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
Metal conduction band is half-filled
Semiconductors have lower Egs than insulators and
can be doped
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Density of States

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Density of States at Conduction Band:

The Greek Theater Analogy

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Concept of a hole
An unoccupied electronic state in
the valence band is called a hole
Treat as positively charge mobile particle in the semiconductors

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Bond Model of Electrons and Holes

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Electrons and Holes

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