Beruflich Dokumente
Kultur Dokumente
LPCVD
APCVD
Atmospheric Pressure CVD
PECVD
Plasma Enhanced CVD
Customized Surfaces
Epitaxial Layers
Insulator
Silicon dioxide
CV
D
Barriers
Silicon Nitride
Conductors
Polycrystalline
Silicon
Surface Reaction
r
g
rg
Film
Arrival Flow
Rate
Growth Rate
Film Surface
Transport Processes
Turbulent Flow
Molecular Flow
Tube Diameter
Gas Density
Gas Viscosity
R#= D V(
Reynolds Number
Linear Velocity
Growth
1.67
T/ y ) (Z) P)
Boundary Layer
Thickness
0.33
Reagents Gas Phase Coefficient
of Thermal Diffusion
X
1
X
2
Under developed
flow pattern at this
position along
susceptor
Susceptor
X
1
X
2
Under developed
flow pattern at this
position along
susceptor
Trends in Gradients
Velocity Values
Increase Along Susceptor
Increase Above Susceptor
Temperature Values
Increase Along Susceptor
Decrease Above Susceptor
Reactant Concentration Value
Decrease Along Susceptor
Increase Above Susceptor
Thermodynamics
CVD Phase Diagram
Give range of input conditions for CVD that could produce specific
condensed phases.
.
Presented as Function of Temperature or Pressure vs Mole Fraction
1200
1000
0.01 Atm
1.0 Atm
TiB 2 Phase
C
0.6
1400
H/HCl = 0.95
K.E. Spear
7 th Conference on CVD 1979
Electrochemical Society Vol 79
10
BCl 3 /CH
-1
=4
B4 C + B
10
-2
B4 C + C
B
10
1600 0 C
1.0 Atm
-3
B4C
10
-4
Vapor
10
-4
Carbon
10
-3
10
-2
10
-1
10
-0
Bernard Ducarroir
J. Electrochem. Soc. 123 ,136, 1976
1200
1100
1000
900
V5Si3
C
VCl2 + V5Si3
VCl2
0 .6
In p u t R e a c ta n t G a s M o le F ra c tio n
H /H C l = 0 .9 5
P = 0.25 atm
S i /(S i + V )
U s e G r a p h ic fo r E d u c a tio n a l V a lu e O n ly
K .E . S p e a r
7 th C o n fe r e n c e o n C V D 1 9 7 9
E le c tr o c h e m ic a l S o c ie ty V o l 7 9
M ak e a V 5 S i 3 fi lm.
P roced ure:
P rob lem :
P roced ure:
P rob lem :
Reaction Kinetics
10.0
1.0
B/(B + Ti) = 0.66
Cl/(Cl + H) = 0.33
5.0
6.0
7.0
-1
1/T (x 10 / K)
8.0
9.0
Input Gases
TiCl 4
BCl 3
H2
10.0
(f)
(a)
1.0
1/T
Higher Surface Reaction Rates
Use Graphic for Educational Value Only
Arrhenius Isotherms
(f)
10.0
1.0
(a)
Partial Pressure Reactant Gas
Use Graphic for Educational Value Only
rg2
rg1
Current
Growth Rate
1/ T 2
New Operating
Temperature
ln (r
g2
1/T
/r
g1
1/ T1
Current
Operating Temperature
T / T T )
) (q
/ k ) (T
act
2
1
2 1
C) Operational Overviews
Polycrystalline Silicon (Polysilicon)
Si
APCVD
o
575 to 650 C
Si
High Exposure Limit
Pyrophoric
Toxic ( 1 Atm but 90% N 2 )
H H H
LPCVD
o
575 to 650 C
25 PA to 130 PA
100% Silane
Si
25 PA to 130 PA
20% to 30% Silane
Si
Considerations
Temperature
At high temperatures get gas phase reactions that produce rough, loosely
adhering deposits and poor uniformity.
At low temperatures deposition rates are to slow for industrial situations.
Zone heating rear of furnace up to 15 oC hotter. (Better film uniformity)
Pressure (LPCVD)
Four popular ways to alter pressure.
Change gas flow rate but keep pumping speed constant.
Change pumping speed with constant flow rate
Change reacting gas or carrier gas with other held constant
Change both gases but keep there ratio constant.
Silicon dioxide
Si
(Oxidation)
400 - 450 C
SiO2
O2
Silanol (SiOH)
Hydride (SiH)
Or Water
Low Temperature
Loose adhering deposits on side walls of reactor. ( Particles that can
contaminate the film.
At high silane pressures allows for gas phase reactions. ( Promotes
particle contamination and hazy films)
Fair step coverage
Low film density ( 2. 0 g/cm 3 )
Deposition rate complex function of Oxygen concentration
Easy chemical reaction. ( Low activation energy, 0.4 ev (10 kcal/mole) )
Film depends on gas phase transport of material to surface
Low temperature allows production of films that will serve as
insulation between aluminum levels in device.
Medium Temperature
Silane
Tetraethoxysilane
OCH 2CH3
Si
H
H
H
650 to 750 C
NO
SiO 2
Si
O
H
(LPCVD)
CH2CH3
TEOS
H
H
C
650 to 750 C
100 to 1000 std. cc / min
30 PA to 250 PA
SiO 2
High Temperature
D ic h lo r o s ila n e
C l
S i
C l
Nitrous Oxide
8 5 0 to 9 0 0 C
(N 2O )
LPCVD
S iO
Cl
H
Si
Cl
Cl
Cl
Cl
H
H
N
H
H Si
Cl H
Si
H
N
H
Precursor
H
Si
Cl
Cl
Cl
Cl
Cl
First Monolayer
of Silicon Nitride
Pad Silicon Dioxide
Except for epi and parallel plate processes both sides of wafer are coated.
Equipment
Furnace with or without vacuum capability
Plasma Chamber
CVD is Crucial to Fabrication of IC's, Especially MOSFETS
(The Bottom Line)