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Characterization of Silicon
Carbide Thyristor
Power Modules
Presented by,
Sanjay B.R
1 M.Tech
SJEC
Mangalore
CONTENTS
Introduction
Module Fabrication
Conclusions
References
1. Introduction
Advantages
counterparts
SiC is a wide bandgap semiconductor material
which allows it to be used at temperatures above
175C, the maximum operating temperature of Si
devices
Higher thermal conductivity
Higher breakdown electric field strength
Higher Saturation drift velocity
Higher Thermal stability
Higher chemical inertness
Volumetric reduction of SiC-based PE systems
Simpler thermal management systems
Why packaging?
For
Work
3
2. Module Fabrication
A
The
Removal
An
Tooling
An
Fig.1
From
It
Process
Fig.2
As
The
These
The
After
Fig.3
The
The
Fig.5
As
However,
For
Approaches
The
SiC
It
can be seen that thyristor 5 has the lowest onstate voltage and thus highest on-state current
compared to the other 2 thyristors
As
The
Drawback
Series
The
Fig.7
Thermal runaway
Fig.8
4. Conclusions
Thyristor
The
In
This
5. References
[1]
Thank You