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THYRISTOR
Thyristor, a three terminal, four layers solid state
semiconductor device, each layer consisting of
alternately N-type or P-type material, i.e; P-N-P-N,
that can handle high currents and high voltages, with
better switching speed and improved breakdown
voltage .
Name thyristor, is derived by a combination of the
capital letters from THYRatron and transISTOR.
Thyristor has characteristics similar to a thyratron
tube which is a type of gas filled tube used as a high
energy electrical switch and controlled rectifier.
But from the construction view point, a thyristor
(pnpn device) belongs to transistor (pnp or npn
device) family.
This means that thyristor is a solid state device like a
transistor and has characteristics similar to that of a
thyratron tube.
THYRISTORS
Thyristor (famous as Silicon Control Rectifier-SCR)
can handle high currents and high voltages.
Typical rating are 1.5kA & 10kV which responds to
15MW power handling capacity.
This power can be controlled by a gate current of
about 1A only.
Thyristor a three terminal (Anode, Cathode and
Gate), three junctions and four layers solid-state
semiconductor device, with silicon doped alternate
material with P-N-P-N structure.
Thyristor act as bistable switches.
It conducts when gate receives a current pulse,
and continue to conduct as long as forward
biased (till device voltage is not reversed).
They stay ON once they are triggered, and will go
OFF only if current is too low or when triggered
off.
Thyristor Schematic
Representation
Two-Transistor Model of
Thyristors
Thyristor Internal
constructional view
Thyristor- Operation
Principle
Thyristor has three p-n
junctions (J1, J2, J3 from the anode).
Characteristics of
Thyristors
Gate Triggering
Turning ON of thyristors by gate triggering is simple and efficient method
of firing the forward biased SCRs.
In Gate Triggering, thyristor with forward breakover voltage (VBO),
higher than the normal working voltage is chosen.
This means that thyristor will remain in forward blocking state with
normal working voltage across anode and cathode with gate open.
Whenever thyristors turn-ON is required, a positive gate voltage b/w
gate and cathode is applied.
With gate current established, charges are injected into the inner p layer
and voltage at which forward breakover occurs is reduced.
Forward voltage at which device switches to on-state depends upon the
magnitude of gate current.
Higher the gate current, lower is the forward breakover voltage .
When positive gate current is applied, gate P layer is flooded with
electrons from cathode, as cathode N layer is heavily doped as compared
to gate P layer.
As the thyristor is forward biased, some of these electrons reach junction
J2.
As a result, width of depletion layer around junction J2 is reduced.
This causes junction J2 to breakdown at an applied voltage lower than
forward breakover voltage VB0.
If magnitude of gate current is increased, more electrons will reach
junction J2, thus thyristor will get turned ON at a much lower forward
applied voltage.
R
Triggering
v
O
LO A D
vS= V
s in t
RC Triggering
v
LO A D
+
R
v S= V
s in t
V
dv/dt triggering
With forward voltage across anode & cathode of a
thyristor, two outer junctions (A & C) are forward biased
but the inner junction (J2) is reverse biased.
The reversed biased junction J2 behaves like a capacitor
because of the space-charge present there.
As p-n junction has capacitance, so larger the junction
area the larger the capacitance.
If a voltage ramp is applied across the anode-tocathode, a current will flow in the device to charge the
device capacitance according to the relation:
Temperature Triggering
During forward blocking, most of the applied
voltage appears across reverse biased junction
J2.
This voltage across junction J2 associated with
leakage current may raise the temperature of
this junction.
With increase in temperature, leakage current
through junction J2 further increases.
This cumulative process may turn on the SCR at
some high temperature.
High temperature triggering may cause Thermal
runaway and is generally avoided.
Light Triggering
In this method light particles (photons) are
made to strike the reverse biased junction,
which causes an increase in the number of
electron hole pairs and triggering of the
thyristor.
For light-triggered SCRs, a slot (niche) is
made in the inner p-layer.
When it is irradiated, free charge carriers are
generated just like when gate signal is
applied b/w gate and cathode.
Pulse light of appropriate wavelength is
guided by optical fibers for irradiation.
If the intensity of this light thrown on the
recess exceeds a certain value, forwardbiased SCR is turned on. Such a thyristor is
known as light-activated SCR (LASCR).
Light-triggered thyristors is mostly used in
high-voltage
direct
current
(HVDC)
transmission systems.
Thyristor Commutation
Commutation: Process of turning off a conducting
thyristor
Current Commutation
Voltage Commutation
A thyristor can be turned ON by applying a positive
voltage of about a volt or a current of a few tens of
milliamps at the gate-cathode terminals.
But SCR cannot be turned OFF via the gate terminal.
It will turn-off only after the anode current is negated
either naturally or using forced commutation techniques.
These methods of turn-off do not refer to those cases
where the anode current is gradually reduced below
Holding Current level manually or through a slow
process.
Once the SCR is turned ON, it remains ON even after
removal of the gate signal, as long as a minimum
current, the Holding Current (IH), is maintained in the
main or rectifier circuit.
Thyristor Commutation
Classification
Forced Commutation
Applied to d.c circuits.
If a thyristor is used in a DC circuit, when first turned on, it will stay
on until the current goes to zero. To turn off the thyristor it is
possible to use a Forced commutation circuit. The circuit creates a
reverse voltage over the thyristor (and a small reverse current) for a
short time, but long enough to turn off the thyristor.
A simple circuit consist of a precharged capacitor and a switch (e.g.
another thyristor) parallel to the thyristor. When the switch is closed,
the current is supplied by the capacitor for a short while. This cause
a reversed voltage over the thyristor, and the thyristor is turned off.
Commutation is achieved by reverse biasing thyristor or reducing
the thysristor current below the holding current value.
Commutating elements such as inductor, capacitors are used for
commutation purpose.
Force commutation is applied to choppers and inverters.
Force Commutation methods
Class A- Resonant Load
Class B- Self commutation
Class C- Auxiliary commutation
Class D- Complimentary commutation
Class E- External pulse commutation
THYRISTOR SWITCHING
CHARACTERISTICS
di/dt protection
When a thyristor is forward biased and is turned on by a gate
pulse, conduction of anode current begins in the immediate
neighbourhood of the gate-cathode junction.
Thereafter, the current spreads across the whole area of junction.
The thyristor design permits the spread of conduction to the
whole junction area as rapidly as possible.
However, if the rate of rise of anode current, i.e. di/dt, is large as
compared to the spread velocity of carriers, local hot spots will be
formed near the gate connection on account of high current
density.
This localized heating may destroy the thyristor. Therefore, the
rate of rise of anode current at the time of turn-on must be kept
below the specified limiting value.
The value of di/dt can be maintained below acceptable limit by
using a small inductor, called di/dt inductor, in series with the
anode circuit. Typical di/dt limit values of SCRs are 20-500 A/
sec.
Local spot heating can also be avoided by ensuring that the
conduction spreads to the whole area as rapidly as possible.
This can be achieved by applying a gate current nearer to (but
never greater than) the maximum specified gate current.
di/dt Protection
dv/dt protection
With forward voltage across the anode & cathode of a thyristor, the two outer
junctions (A & C) are forward biased but the inner junction (J2) is reverse
biased.
The reversed biased junction J2 behaves like a capacitor because of the spacecharge present there.
Let the capacitance of this junction be Cj. For any capacitor, i = C dv/dt.
In case it is assumed that entire forward voltage va appears across reverse
biased junction J2 then charging current across the junction is given by
i = dQ/dt =d(Cj Va )/dt
i=Cj (d Va /dt) + Va(d Cj /dt)
i = Cj dva /dt
This charging or displacement current across junction J2 is collector currents of
Q2 and Q1 Currents IC2, IC1 will induce emitter current in Q2, Q1.
In case rate of rise of anode voltage is large, the emitter currents will be large
and as a result, 1+ 2 will approach unity leading to eventual switching
action of the thyristor.
If the rate of rise of forward voltage dVa/dt is high, the charging current i will
be more. This charging current plays the role of gate current and turns on the
SCR even when gate signal is zero.
Such phenomena of turning-on a thyristor, called dv/dt turn-on must be
avoided as it leads to false operation of the thyristor circuit.
For controllable operation of the thyristor, the rate of rise of forward anode to
cathode voltage dVa/dt must be kept below the specified rated limit.
Typical values of dv/dt are 20 500 V/sec. False turn-on of a thyristor by large
dv/dt can be prevented by using a snubber circuit in parallel with the device.
Snubber circuit
A snubber circuit consists of a series combination of resistance Rs and
capacitance Cs in parallel with the thyristor as shown in Fig.
Strictly speaking, a capacitor Cs in parallel with the device is sufficient to
prevent unwanted dv/dt triggering of the SCR.
When switch S is closed, a sudden voltage appears across the circuit.
Capacitor Cs behaves like a short circuit, therefore voltage across SCR is
zero.
With the passage of time, voltage across Cs builds up at a slow rate such
that dv/dt across Cs and therefore across SCR is less than the specified
maximum dv/dt rating of the device.
Here the question arises that if Cs is enough to prevent accidental turn-on
of the device by dv/dt, what is the need of putting Rs in series with Cs ?
The answer to this is as under.
heater
control applications.
One of the most common applications
is to use it in ac circuits to control a dc
motor or appliance because the SCR
can both rectify and control.
The SCR is triggered on the positive
cycle and turns off on the negative
cycle.
A circuit like this is useful for speed
control for fans or power tools and
other related applications.
Triac operation
GTOs Schematic
representation
Thyristor Summary
Summary: Thyristors
The thyristor family:
double injection yields lowest forward voltage drop in high
voltage devices.
More difficult to parallel than MOSFETs and IGBTs
The SCR:
highest voltage and current ratings, low cost, passive turnoff transition
The GTO:
intermediate ratings (less than SCR, somewhat more than
IGBT). Slower than IGBT.
Slower than MCT.
Difficult to drive.
The MCT:
So far, ratings lower than IGBT.
Slower than IGBT.
Easy to drive.
Still emerging devices?
Thyristor (SCR)
I
A (Anode)
Ia
Ig
G (Gate)
+
Vak
_
K (Cathode)
Thyristor: Symbol
Vr
Ih
Ibo
Ig>0
Ig=0
Vbo
v-i characteristics
Vak
Thyristor Conduction
ia
+
vs
_
ig
+
vo
_
vo
t
ig
Types of thyristors
Phase controlled
rectifying line frequency voltage and current for ac and dc
motor drives
large voltage (up to 7kV) and current (up to 4kA) capability
low on-state voltage drop (1.5 to 3V)
Inverter grade
used in inverter and chopper
Quite fast. Can be turned-on using force-commutation
method.
Light activated
Similar to phase controlled, but triggered by pulse of light.
Normally very high power ratings
TRIAC
Dual polarity thyristors