Beruflich Dokumente
Kultur Dokumente
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics1
CurrentFlowandConductivity
Area = A
=qnAx=qnAvt
CurrentdensityJ=(Q/t)A-1
=qnv
= 107 mhos-cm
SemiconductorPhysics2
ThermalIonization
broken bond
Siatomshave
thermalvibrations
aboutequilibrium
point.
ionized
silicon
atom
Smallpercentageof
Siatomshavelarge
enoughvibrational
energytobreak
covalentbondand
liberateanelectron.
+
-
free
electron
covalent bond
neutral silicon atom
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics3
ElectronsandHoles
T3>T2>T1
t = T1
Densityoffreeelectrons
=n:Densityoffree
holes=p
p=n=ni(T)=intrinsic
carrierdensity.
ni2(T)=Cexp(qEg/(kT))
=1020cm6at300K
generation of B
t=T
2
T=tempinK
k=1.4x1023joules/K
Eg=energygap=1.1
eV
insilicon
q=1.6x1019coulombs
CopyrightbyJohnWiley&Sons2003
recombination of B
apparent
movement
of "Hole"
t=T
3
SemiconductorPhysics4
DopedSemiconductors
Extrinsic(doped)semiconductors:p=pon= noni
Carrierdensityestimates:
Lawofmassactionnopo=ni2(T)
ChargeneutralityNa+no=Nd+po
PtypesiliconwithNa>>ni:
poNa,noni2/Na
empty
bond
NtypesiliconwithNd>>ni:
noNd,poni2/Nd
extra valance
electron
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics5
NonequilibriumandRecombination
ThermalEquilibriumCarriergeneration=Carrierrecombination
n=noandp=po
Nonequilibriumn>noandp>po
n=no+nandp=no+n;n=excesscarrierdensity
Excessholesandexcesselectronscreatedinequalnumbersbybreakingofcovalent
bonds
Generationmechanismslight(photoelectriceffect),injection,impactionization
Recombinationremovalofexcessholesandelectrons
Mechanismsfreeelectroncapturedbyemptycovalentbond(hole)ortrappedby
impurityorcrystalimperfection
Rateequation:d(n)/dt=n
Solutionn=n(0)et
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics6
CarrierLifetimes
=excesscarrierlifetime
Usuallyassumedtobeconstant.Changesintwoimportantsituations.
increaseswithtemperatureT
decreasesatlargeexcesscarrierdensities;=o/[1+(n/nb)2]
Controlofcarrierlifetimevalues.
Switchingtimeonstatelosstradeoffmandatesgoodlifetimecontrol.
Controlviauseofimpuritiessuchasgoldlifetimekillers.
Controlviaelectronirradiationmoreuniformandbettercontrol.
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics7
CurrentFlow
Drift
Diffusion
p
+
-
Jn
x
+
Jdrift=qnnE+qppE
n=1500cm2/Vsecforsiliconat
roomtemp.andNd<1015cm3
p=500cm2/Vsecforsiliconat
roomtemp.andNa<1015cm3
CopyrightbyJohnWiley&Sons2003
Jdiff=Jn+Jp=qDndn/dxqDpdp/dx
Dn/n=Dp/p=kT/q;Einsteinrelation
D=diffusionconstant,=carriermobility
TotalcurrentdensityJ=Jdrift+Jdiff
SemiconductorPhysics8
PNJunction
metallurgical junction
N
A
N
A
N
A
ND
NA
FormationofSpaceChargeLayer
metallurgical
junction
Diffusingelectronsandholes
leavetheregionnear
metallurgicaljunctiondepleted
offreecarriers(depletion
region).
ionized
acceptors
ionized
donors
+
+
P
-
Exposedionizedimpurities
formspacechargelayer.
Electricfieldduetospace
chargeopposesdiffusion.
Diffusing
electrons
+
+
+
+
N
+
Electric
field
opposing
diffusion
Diffusing
holes
space charge
layer width = W
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics10
QuantitativeDescriptionofSpaceChargeRegion
Assumestepjunction.
d 2
qN
d
-x p
-qN a
xn
c = -
E(x)dx
- xp
qNax p2 + qNdx n2
c = 2
CopyrightbyJohnWiley&Sons2003
xn
SemiconductorPhysics11
Contact(Builtin,Junction)Potential
d
InthermalequilibriumJn=q nn
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics12
ReverseBiasedStepJunction
Starting equations
W(V) = xn(V) + xp(V)
V +
+
+
++
Wo
W(V)
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics13
ForwardBiasedPNJunction
V
++
+
Wo
Forwardbiasfavors
diffusionoverdrift.
W(V)
ni 2
qV
pn(0) =
exp(
)
Nd
kT
ni 2
qV
exp(
) = np(0)
Na
kT
x
pn(x) = pn (0) exp(
)
Lp
n po
Minoritycarrier
diffusionlengths.
no
Qn =
CopyrightbyJohnWiley&Sons2003
Excessminority
carrierinjectioninto
bothpandndrift
regions.
Ln=[Dnn]0.5
Lp=[Dpp]0.5
SemiconductorPhysics14
IdealPNJunctionIVCharacteristics
Excesscarriersindriftregionsrecombinedandthusmoremustbe constantlyinjectedif
thedistributionsnp(x)andpn(x)aretobemaintained.
ConstantinjectionofelectronsandholesresultsinacurrentdensityJgivenby
Qn
J =
v
- J s
v
forward bias
CopyrightbyJohnWiley&Sons2003
reverse
bias
combined
characteristic
v
SemiconductorPhysics15
ReverseSaturationCurrent
Carrierdensitygradient
immediatelyadjacentto
depletionregioncauses
reversesaturationcurrentto
flowviadiffusion.
+
++
Wo
Jsindependentofreverse
voltageVbecausecarrier
densitygradientunaffectedby
appliedvoltage.
W(V)
n po
no
n p(x)
+
p (x)
n
x
Electric field, J
CopyrightbyJohnWiley&Sons2003
Jsextremelytemperature
sensitivitybecauseof
dependenceonni2(T.)
s
SemiconductorPhysics16
ImpactIonization
EEBD;freeelectroncan
acquiresufficientfromthefield
betweenlatticecollisions(tc
1012sec)tobreakcovalentbond.
Energy=0.5mv2=qEg;v=qEBDtc
SolvingforEBD gives
2 Eg m
EBD=
2
q tc
Numericalevaluation
Si
-
Si
-
Electric field E
Si
-
m=1027grams,Eg=1.1eV,tc=1012sec.
EBD=
Experimentalestimatesare23.5x105V/cm
CopyrightbyJohnWiley&Sons2003
SemiconductorPhysics17