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332:479 Concepts in VLSI

Design

Lecture 14
Logic Gate Families and Layout

XOR gates
Critical Paths
Logic Layouts
Transmission Gate Layouts
Clocked CMOS Logic
Pass Transistor Logic
Standard Cells and Gate Arrays
Summary
Michael L. Bushnell -- CAIP Center and WINLAB
ECE Dept.,
RutgersinU.,
Piscataway,
NJ
April 9, 2015
Concepts
VLSI
Des

Material from: Principles of CMOS VLSI Design


By Neil E. Weste and Kamran Eshraghian

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Concepts in VLSI Des

XOR Gates
nMOS XNOR gate:

CMOS XOR gate:


B
OUT

A
OUT

A
B

Complement A, B, or OUT to get an equivalence gate


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Concepts in VLSI Des

Causes of Incorrect Gate


Operation

Insufficient or noisy power lines


Gate input noise
Faulty transistors
Faulty transistor connections
Incorrect transistor ratios
Charge sharing or bad clocking of dynamic gates
Ratioed and dynamic gates not used in application specific
integrated circuits (ASICs)
Used in microprocessors
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Concepts in VLSI Des

Critical Paths
Slowest timing paths that limit a chips speed
Affect critical paths at these levels:

Architecture
RTL/Logic gate levels
Circuit level
Layout level

RTL/logic level pipelining, gate types, fanin & fanouts


Circuit level resize transistors to speed up
Layout level speed up by changing physical layout
False paths appear to be critical paths, but cannot propagate
transitions due to Boolean value conflicts
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New Gate Notation

Bubble on transistor closest to gate output


Stage ratio increase in transistor size in successive
logic stages
Use gates with # series inputs of 2-5 for best speed
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Example

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Worst-Case Rise Delay for mInput NAND

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Reformulation

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New Delay Model

tdr = tinternal-r + k toutput-r


tinternal-r = Rp Cg m r

toutput-r = Rp Cg 1 + q (k)
n
k
tf equation is similar
Assume equal-sized n & p transistors

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Different Delay Model

tr = t f
NAND gate: Rp = m Rn
Wp = W n

m
NOR gate: Rn = m Rp
Wn = W p
m
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Delay of 1-3 Input Gates

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Delay of 4-8 Input Gates

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NAND/NOR Delays Measured


with SPICE

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Effective Channel Resistances

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Choice of Fastest Gate


Implementation

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Comparison Results for Different


8-Input AND Gates

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Logic Design Guidelines

Avoid long resistive charging / discharging paths in CMOS


Use NANDs wherever possible
Place inverters at high fanout nodes
Avoid NORs in high-speed circuits
With fanin > 4 and large fanout

Keep fanout below 5-10


Use minimum-sized gates on high fanout nodes to keep CL down
Keep rising (falling) edges sharp
When power or area is a constraint, use large fanin static gates
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CMOS Inverter Layouts

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High Drive Inverters

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NAND Gate Layout Guidelines


Use metal3 or highest metal layer for power and
ground
Place transistors in complex gates:

Horizontal channels in diffusion


Vertical poly gates
Use line of diffusion rule for gate layout

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NAND Gate Layouts

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NOR Gate Layouts

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Complex Logic Gate Layout

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XNOR Layouts

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Full-Custom Density
Improvement
1.
2.
3.
4.

Route wires over cells


Use merged source/drain connections
Use white space in sparse gates
Use smaller, optimal device sizes

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Reducing CL

Use better physical design

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Inferior Gate Layout

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Superior Gate Layout


Less C on output node

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Transmission Gate Layouts

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Two-Input MUX

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Two-Input MUX

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Standard (Sandia) Cells

Fixed height (pitch)


Width varies with gate function
Automatically placed in rows and wires routed by
Cadence Envisia tool

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Example Standard Cell

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More Standard Cell Layouts

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More Standard Cell Layouts

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Gate Array (Sea of Gates) Layout

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Sea of Gates Layout

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Gate Array Layouts


Isolate gates from each other with vertical poly strips
tied to VSS (VDD)

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Clocked CMOS Dynamic Logic


C2MOS Used to:
Interface with dynamic CMOS logic
Same input C as static CMOS longer tr & tf
Faster if clocking transistors at center
Better for hot e-- problems if clock transistor is next to
ground
CLOCK is last input to change
However, this defeats the isolation purpose of C2MOS
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Clocked CMOS Logic

CLK
CLK

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Summary

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XOR gates
Critical Paths
Logic Layouts
Transmission Gate Layouts
Clocked CMOS Logic
Pass Transistor Logic
Standard Cells and Gate Arrays

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