ECE 32B/32F: Electronic

Circuit Analysis & Design

Lab Manual

November 2014

ECE 32B: Electronic Circuit Analysis

& Design Lab

Bipolar Junction Transistor

Bipolar junction transistor(BJT) is a type
oftransistorthat relies on the contact of two
types ofsemiconductor for its operation.
Naming of BJT: Bipolartransistorsare so
named because their operation involves
bothelectronsandholes.
Charge Carriers: These two kinds of charge
carriers are characteristic of two kinds of doped
semiconductor material;
- Electrons are majority charge carriers in ntype semiconductors,
- Holes are majority
charge carriers in p-type
ECE 32B: Electronic Circuit Analysis
& Design Lab
semiconductors.

November 2014

NPN Transistor Amplifier

November 2014

ECE 32B: Electronic Circuit Analysis

& Design Lab

Output Characteristics
Output Characteristic Curve relates output
collector current, (Ic) collector voltage, (Vce) for
different values of base current, (Ib).
Load Line:

At this point,
transistor current is maximum and
voltage across collector is minimum,
for a givenload .
Load line shows all possible
operating points when different
values of base current are applied. It
is necessary to set the initial value
ofVcecorrectly to allow the output
voltage to vary both up and down
when amplifying AC input signals.
Operating Point, or Quiescent
Point, Q-point: This isECE
called
setting
of Analysis
32B: Electronic
Circuit
November 2014
& Design Lab
the operating point orQuiescent

Load Line

November 2014

ECE 32B: Electronic Circuit Analysis

& Design Lab

Experiment# 1 Frequency
Response of an Amplifier
Frequency Response: Relationship between GAIN
and FREQUENCY
20 log10

(Gain)dB =
10 log10

VOUT
VIN
POUT
PIN

Semi-log
paper

Gai
n

Frequency
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ECE 32B: Electronic Circuit Analysis

& Design Lab

Practical Frequency
Response

November 2014

ECE 32B: Electronic Circuit Analysis

& Design Lab

Frequency Range
Frequency Range:
- LOW Frequencies: At low frequencies,
capacitive reactance XC is large and series
capacitors develop voltage drop and reduces
gain.
- HIGH frequencies: At high frequencies,
capacitive reactance XC is small, and parallel
capacitors short out transistor and load.
- MID frequencies: This is a region between the
high and low frequencies. The gain is generally
constant and is at a maximum for the circuit.
November 2014

ECE 32B: Electronic Circuit Analysis

& Design Lab

Bandwidth/Roll-off of
Amplifier
Break Points: The points at which the gain drops
to 3 dB below the mid-frequency gain are called
the break-points.
Bandwidth: The difference between the
breakpoint frequencies is the bandwidth of the
amplifier.
Break
points

November 2014

ECE 32B: Electronic Circuit Analysis

& Design Lab

Roll-off Rate
Roll-off Rate: Rate at which gain decreases from
the mid-frequency value. The steeper the drop,
the greater the roll-off.
dB/decade: Gain decrease where the two
frequencies differ by a factor of TEN.
dB/octave: Gain decrease where the two
frequencies differ by a factor of TWO.

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ECE 32B: Electronic Circuit Analysis

& Design Lab

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Frequency Response Factors

Factors Affecting Frequency
Response:
- Capacitance in circuit
- Gain of circuit
- Transistor characteristics itself
. Transfer characteristic ICE/IBE
. Input characteristic IBE/VBE
. Output characteristic VCE/IEE
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ECE 32B: Electronic Circuit Analysis

& Design Lab

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