Beruflich Dokumente
Kultur Dokumente
Etienne Sicard
Insa
etienne.sicard@insa-tlse.fr
http://intrage.insa-tlse.fr/~etienne
E. Sicard - ultra deep
Summary
Ultra-deep submicron technology
Specific features
Embedded Memory
Magnetic RAM
SOI
conclusion
Micron Sub-micron
80286
1.0
80386
Ultra
Deep-sub
micron
Deep-sub
micron
486
pentium
pentium II
0.3
0.2
Pentium IV
Itanium
0.1
0.05
0.03
83
86
89
92
95
98
01
Year
E. Sicard - ultra deep
04
07
Nano
2. Specific features
Multiple metal layers
Stacked vias
Low K dielectric to
reduce couplings
Copper to speed up
signal transport
High K dielectric to
reduce leakage
Improved
tretch isolation
Multiple MOS
options
2. Specific features
High Speed: normal MOS
Very high speed: critical
path
Low leakage: for low power
3-6 MOS
options
2. Specific features
Ultra High Speed
Low Leakage
EEProm
High Voltage
RF
High Speed
Application-oriented MOS device
Same basic mechanism
New physical properties in EEPROM and MRam
MRam
2. Specific features
1.2V
2.5V
1.2V
1.2V
1.2V
High Speed
Low leakage
1.2V
2.5V
High Voltage
2.5V
1.8V
Example in 0.12m technology
2. Specific features
Option layer
Option layer
properties
2. Specific features
Low leakage
High speed
High voltage
2. Specific features
Small Ion
reduction
Ioff ~10nA
Ioff ~100pA
Low leakage
High speed
2. Specific features
0.1m process (TSMC+ST+IBM+)
Type of MOS
Effective
Oxide
channel length
thickness
Ioff
Ion
Very
Very
high
high
(m)
Ultra-high
0.07
16
speed
High speed
0.09
16
High
High
Low leakage
0.09
24
Low
Medium
High voltage
0.2
50
Low
Low
3. Embedded Memory
80% of a system-on-chip
Bottleneck for bandwidth
Non volatile
Volatile
eDRAM
SRAM
ROM
EEPROM
FRAM
3. Embedded Memory
CS
CB
3. Embedded Memory
Double-Gate MOS
2nd Poly
Floating Poly
3. Embedded Memory
Double-Gate MOS
Ids
Ids
Single gate
Single gate
Double gate
Vds
Vds
Gate discharged
Gate charged
3. Embedded Memory
Double-Gate MOS: write/erase by tunneling
0V
12V
Hot
electron
Tunneling
Vdd
Cold
electron
Tunneling
12V
Accelerate
erase
write
Dense but slow
4. Magnetic RAM
Dense, fast, non-volatile: universal memory
Silicium, Cobalt et Nikel
equal to
I=5mA
4. Magnetic RAM
Column
i/2
i/2
Line
i/4
i/4
i/2
i/2
Write
Erase
Principles:
Principles:
Write:
Write: i/2
i/2on
onthe
theline,
line,i/2
i/2on
onthe
thecolumn
columngives
givesaacurrent
current
high
highenough
enoughto
tochange
changethe
thestate
state
Read:
Read: i/4
i/4on
onthe
theline,
line,i/4
i/4on
onthe
thecolumn
columnand
andmonitor
monitorthe
the
attenuation
attenuationof
ofcurrent
currentdue
dueto
tomagnetic
magneticstate
state
Read
5. Silicon-On-insulator
The next major evolution?
CMOS compatible
Less distance between nMOS
and pMOS
Less capacitance
Less leakage
>50%
faster
circuits
Kink effect
6. Conclusion
The ultra-deep submicron technologies introduce new features
Low leakage MOS targeted for low power
High voltage MOS introduced for I/O interfacing
Double-poly MOS for EPROM/Flash memories
Embedded memory are key components for System-on-chip
Magnetic RAM to become the universal memory
SOI has many promising features, some design issues pending