Chapter 3:

Bipolar Junction Transistors

TransistorConstruction
There are two types of transistors:
pnp
npn

pnp

The terminals are labeled:

E - Emitter
B - Base
C - Collector

npn

TransistorOperation
With the external sources, VEE and VCC, connected as shown
below:

The emitter-base junction is forward biased

The base-collector junction is reverse biased

CurrentsinaTransistor

Emitter current is the sum of the collector and

base currents:
IE IC IB

The collector current is comprised of two

currents:
I C I Cmajority I COminority

CommonBaseConfiguration

The base is common to both input (emitterbase) and

output (collectorbase) of the transistor.

Common-Base Amplifier

Input Characteristics
This curve shows the relationship
between of input current (IE) to input
voltage (VBE) for various levels of
output voltage (VCB).

Common-Base Amplifier

Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).

OperatingRegions

ActiveOperating range of the

amplifier.

CutoffThe amplifier is basically off.

There is voltage, but little current.

SaturationThe amplifier is full on.

There is current, but little voltage.

Approximations

Emitter and collector currents:

IC IE

Base-emitter voltage:
VBE 0.7

Alpha( )

Alpha () relates the DC currents IC and IE :

dc

IC
IE

Ideally: = 1
In reality: is between 0.9 and 0.998
Alpha () in the AC mode:
mode
ac

I C
I E

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TransistorAmplification

Currents and Voltages:

Voltage Gain:
VL
50V
Av

250
Vi
200mV

Vi
200mV
IE Ii

10mA
Ri
20
IC IE
I L I i 10 mA
VL I L R (10 ma )( 5 k ) 50 V
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CommonEmitterConfiguration

Theemitteriscommontobothinput
(baseemitter)andoutput(collector
emitter).
Theinputisonthebaseandtheoutputis
onthecollector.

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CommonEmitterCharacteristics

Collector Characteristics

Base Characteristics

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CommonEmitterAmplifierCurrents
Ideal Currents
IE = IC + IB
Actual Currents
IC = IE + ICBO

IC = IE

where ICBO = minority collector

current
This is usually so small that it can be
ignored, except in high power
transistors and in high temperature
environments.

When IB = 0 A the transistor is in cutoff, but there is some minority

current flowing called ICEO.

I
I CEO CBO I B 0 A
1

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Beta( )
represents the amplification factor of a transistor. ( is sometimes
referred to as hfe, a term used in transistor modeling calculations)

In DC mode:

I
dc C
IB
In AC mode:

ac

IC
V cons tan t
IB CE

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Beta( )
Determining from a Graph

(3.2 mA 2.2 mA)

(30 A 20 A)
1 mA

V 7.5
10 A CE

AC

100

2.7 mA
VCE 7.5
25 A
108

DC

Note: AC = DC

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Beta( )

Relationship between amplification factors and

Relationship Between Currents

I C I B

I E ( 1)I B

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CommonCollectorConfiguration

The input is on the base

and the output is on the
emitter.

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CommonCollectorConfiguration

The characteristics are similar

to those of the commonemitter configuration, except
the vertical axis is IE.

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LimitationsofOperationforEachConfiguration

VCE is at maximum and IC is at

minimum (ICmax= ICEO) in the cutoff
region.
IC is at maximum and VCE is at
minimum (VCE max = VCEsat = VCEO) in
the saturation region.
The transistor operates in the active
region between saturation and cutoff.

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PowerDissipation
Common-base:

PCmax VCB I C
Common-emitter:

PCmax VCE I C
Common-collector:

PCmax VCE I E

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TransistorSpecificationSheet

more
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TransistorTesting

Curve Tracer
Provides a graph of the characteristic curves.

DMM
Some DMMs measure bDC or hfe.

Ohmmeter

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Transistor Terminal Identification

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