Beruflich Dokumente
Kultur Dokumente
ELECTRICAL CONDUCTION
12.2 Ohm's Law:
V = I R in most cases V = V = V2 V1
resistance (Ohms)
current (amps)
e-
(cross
sect.
area)
I
V
L
V I
L
A
L
L
R
A A
resistivity
(Ohm-m)
J: current density
conductivity
c12f01
c12f02
c12f03
c12f04
An intrinsic semiconductor has a band gap or barrier for the electrons to get
into the conduction band
This barrier need a photon excitation, an external bias potential
Usually RT cannot excite the electron to the conduction band.
For instance, a photon of light ~4eV
c12f06
J = E
d
e=
E
c12f07
II. SEMICONDUCTIVITY
Conductivity of semiconducting materials is lower than from metals
Sensitive to minute concentrations of impurities
Intrinsic: pure material
Extrinsic: doped with impurity atoms
c12f13
ne e
c12f14
p e h
c12f15
c12f16
n-type silicon
1021/m3
c12f17
1
RH
ne
e
e RH
ne
c12f20
RH I x Bz
VH
d
c12f21
Results:
c12f22
c12f23
c12f24
c12f25
The MOSFET
c12f26
Dielectric material
Electric dipole structure
Charge separation
Q
C
V
Do = oE
A
C o
l
o= permittivity of vacuum
= 8.85x10-12 F/m
Do = oE + P
A
C
l
r
o
Dielectric Behavior
c12tf05
p = qd
Surface charge density or
dielectric displacement (C/m2)
Do = oE
D= E
Do = oE + P
P= o(r 1)E
Electronic Polarization
c12f32
Ionic polarization
Orientation polarization
Air
Quartz
Strontium titanate
Neoprene rubber
12
Nylon
14
Pyrex glass
14
Silicone oil
15
Paper
16
Bakelite
24
Polystyrene
24
Teflon
60
c12f34
SUMMARY
Electrical conductivity and resistivity are:
--material parameters.
--geometry independent but not at small scale (nano)
Electrical resistance is:
--reducing deformation
--reducing imperfections
--decreasing temperature.
For pure semiconductors, conductivity is increased by
--increasing temperature
--doping (e.g., adding B to Si (p-type) or P to Si (n-type).
15