C

E
Dr. D G Borse

The BJT Bipolar Junction Transistor

Note: Normally Emitter layer is heavily doped, Base layer is lightly
doped and Collector layer has Moderate doping.

The Two Types of BJT Transistors:

npn
pnp
E

C
C

Cross Section

C
C

Cross Section

B
B

Schematic
Symbol

Schematic
Symbol

E
Collector doping is usually ~ 109
Base doping is slightly higher ~ 1010 1011
Emitter doping is much higher ~ 1017
Dr. D G Borse

BJT Current & Voltage - Equations

IE
E

IC

VCE +

IE
-

VBE

IB

E
+
VEB

VBC

VEC

IC

C
+

IB

VCB
-

npn

pnp

IE = I B + I C

IE = I B + I C

VCE = -VBC + VBE

VEC = VEB - VCB

Dr. D G Borse

I co

VCB

+
-

Inc
pElectrons
+Holes

+
VBE -

Ipe

Ine

n+

Bulk-recombination
Current

Figure:Currentflow(components)forannpnBJTintheactiveregion.
NOTE:Mostofthecurrentisduetoelectronsmovingfromtheemitterthroughbasetothe
collector.Basecurrentconsistsofholescrossingfromthebaseintotheemitterandofholes
thatrecombinewithelectronsinthebase.
Dr. D G Borse

Physical Structure
Consists of 3 alternate layers of n- and ptype semiconductor called emitter (E),
base (B) and collector (C).
Majority of current enters collector,
crosses base region and exits through
emitter. A small current also enters base
terminal, crosses base-emitter junction
and exits through emitter.
Carrier transport in the active base region
directly beneath the heavily doped (n+)
emitter dominates i-v characteristics of
BJT.

Dr. D G Borse

Ic

C
Recombination

VCB +

- - - - -- n
- - - - - - - - - -

- Electrons

B
+
+
_

- + -

IB
VBE

- - - - + - -p

- - - - - --- - - - - - - - - - - - - - - - - -

Dr. D G Borse

IE

+ Holes

For CB Transistor IE= Ine+ Ipe

Ic= Inc- Ico

Bulkrecombination
current

ICO

Inc

And Ic= - IE + ICo

CB Current Gain, (Ic- Ico) .
(IE- 0)
For CE Trans., IC = Ib + (1+) Ico
where ,
1- is CE Gain

Ipe

Ine

Figure: An npn transistor with variable biasing sources (common-emitter configuration).

Dr. D G Borse

Circuit Diagram
VCE
IC

VCC

+
_

Common-Emitter
Collector-Current Curves
IC
Active
Region

IB

IB

Region of Description
Operation
Active

Small base current

controls a large
collector current

VCE
Saturation Region

Saturation VCE(sat) ~ 0.2V, VCE

increases with IC
Cutoff

Cutoff Region
IB = 0

Achieved by reducing IB
to 0, Ideally, IC will also
be equal to 0.
Dr. D G Borse

BJTs have three regions of operation:

1) Active - BJT acts like an amplifier (most common use)
2) Saturation - BJT acts like a short circuit
BJT is used as a switch by switching
3) Cutoff - BJT acts like an open circuit
between these two regions.
IC(mA)

Saturation Region
IB = 200 A

30

When analyzing a DC
BJT circuit, the BJT
is replaced by one of
the DC circuit models
shown below.

Active Region

IB = 150 A

22.5

B
E

IB = 100 A

15

IB = 50 A

7.5

Cutoff Region

IB = 0

VCE (V)
0

10

15

20

DC Models for a BJT:

C
ICEO

dc IB
rsat
B
B

+
_

IB

+
_

Vo

+
_

RBB
Vo

Vo

E
E

dc IB

Active Region Model #1

Saturat ion Region Model

Dr. D G Borse

E
Active Region Model #2

Ro

DC and DC
= Common-emitter current gain
= Common-base current gain
= IC

= IC

IB

IE

The relationships between the two parameters are:

=

1-

+1

Note: and are sometimes referred to as dc and dc

because the relationships being dealt with in the BJT
are DC.
Dr. D G Borse

Output characteristics: npn BJT (typical)

IC(mA)

dc =
IB = 200 A

30

Note: The PE review text

sometimes uses dc instead of dc.
They are related as follows:

IB = 150 A

22.5

IB = 100 A

15

IB = 50 A

7.5

IB = 0

0
0

10

15

dc =
VCE (V)

20

Input characteristics: npn BJT (typical)

IB(A)
VCE = 0.5 V
200

VCE = 0
VCE > 1 V

150

IC
= h FE
IB

dc
dc + 1

dc

dc
1 - dc

Find the approximate values of

dc and dc from the graph.

The input characteristics look like the characteristics of a

forward-biased diode. Note that VBE varies only slightly,
so we often ignore these characteristics and assume:
Common approximation: VBE = Vo = 0.65 to 0.7V

100

Note: Two key specifications for the BJT are

50

Bdc and Vo (or assume Vo is about 0.7 V)

VBE (V)
0

0.5

1.0

Dr. D G Borse

Figure:Commonemittercharacteristicsdisplayingexaggeratedsecondaryeffects.

Dr. D G Borse

Figure:Commonemittercharacteristicsdisplayingexaggeratedsecondaryeffects.

Dr. D G Borse

Various Regions (Modes) of Operation of BJT

Active:

Most important mode of operation

Central to amplifier operation
The region where current curves are practically flat

Saturation: Barrier potential of the junctions cancel each other out

causing a virtual short (behaves as on state Switch)

Cutoff:

Current reduced to zero

Ideal transistor behaves like an open switch

* Note: There is also a mode of operation called

inverse active mode, but it is rarely used.
Dr. D G Borse

BJT Trans-conductance Curve

For Typical NPN Transistor 1
Collector Current:
IC

IC = IES eVBE/VT
Transconductance:
(slope of the curve)

8 mA

IC /

6 mA

gm =

VBE

4 mA

IES = The reverse saturation current

of the B-E Junction.
VT = kT/q = 26 mV (@ T=300oK)

2 mA

= the emission coefficient and is

0.7 V

VBE

usually ~1

Dr. D G Borse

Three Possible Configurations of BJT

Biasing the transistor refers to applying voltages to the
transistor to achieve certain operating conditions.
1. Common-Base Configuration (CB) :
IE

input = VEB &

output = VCB & IC

2. Common-Emitter Configuration (CE): input = VBE & IB

output= VCE & IC

3. Common-Collector Configuration (CC) :input = VBC & IB

(Also known as Emitter follower)
Dr. D G Borse

output = VEC & IE

Common-Base BJT Configuration

C

Circuit Diagram: NPN Transistor

IC

VCE

VCB
The Table Below lists assumptions
that can be made for the attributes
of the common-base BJT circuit in
the different regions of operation.
Given for a Silicon NPN transistor.

VCB

Region of
Operation

IC

VCE

VCB

Active

IB

=VBE+VCE ~0.7V 0V

Saturation

Max

~0V

Cutoff

~0

=VBE+VCE 0V

VBE

IE

VBE

+
_

+
_

IB
B

VBE
C-B
Bias

E-B
Bias

Rev.

Fwd.

~0.7V -0.7V<VCE<0 Fwd. Fwd.

Dr. D G Borse

0V

Rev.

None
/Rev.

Common-Base (CB) Characteristics

Although the Common-Base configuration is not the most
common configuration, it is often helpful in the understanding
operation of BJT
Vc- Ic (output) Characteristic Curves
IC mA

Breakdown Reg.

Saturation Region

0.8V

Active
Region
IE

4
IE=2mA
2

Cutoff
IE = 0

IE=1mA

2V

4V

6V

Dr. D G Borse

8V

VCB

Common-Collector BJT Characteristics

Emitter-Current Curves
The CommonCollector biasing
circuit is basically
equivalent to the
common-emitter
biased circuit except
instead of looking at
IC as a function of VCE
and IB we are looking
at IE.
Also, since ~ 1, and
= IC/IE that means
IC~IE

IE

Active
Region

IB

VCE
Saturation Region
Cutoff Region
IB = 0
Dr. D G Borse

n p n Transistor: Forward Active Mode Currents

Base current is given by
I

I
co
BE 1
I C
exp
V

IC=

I B=

20

500 is forward common-emitter

current gain
Emitter current is given by

VBE

Forward Collector current is

I I co exp BE 1
V

Ico is reverse saturation current

1018 A I

co

BE 1
I I I
exp
V

E
B
C

I co

IE=

is forward common-

F 1.0
0.95
base current gain
F 1
F

In this forward active operation region,

I

10 9 A

VT = kT/q =25 mV at room temperature

Dr. D G Borse

C
B

I
F

C
E

Various Biasing Circuits used for BJT

Fixed Bias Circuit
Collector to Base Bias Circuit
Potential Divider Bias Circuit

Dr. D G Borse

The Thermal Stability of Operating Point SIco

The Thermal Stability Factor : SIco
SIco = Ic
Ico Vbe,
This equation signifies that Ic Changes SIco times as fast as Ico
Differentiating the equation of Collector Current IC & rearranging
the terms we can write
SIco 1+
1- (Ib/IC)
It may be noted that Lower is the value of SIco better is the stability

Dr. D G Borse

The Fixed Bias Circuit

The Thermal Stability Factor : SIco
15 V

15 V

200 k

1k

RC

Rb

SIco = Ic
Ico

General Equation of SIco Comes out to be

SIco
C

Ib
E

Vbe,

RC

1+
1- (Ib/IC)

Applying KVL through Base Circuit we

can write,
Ib Rb+ Vbe= Vcc
Diff w. r. t. IC, we get

(Ib / Ic) = 0

SIco= (1+) is very large

Indicating high un-stability

Dr. D G Borse

The Collector to Base Bias Circuit

VCC

The General Equation for Thermal

Stability Factor,
SIco = Ic
Ico

RC

Comes out to be

Vbe,

SIco

Ic
RF

Ib

we can write (Ib+ IC) RC + Ib Rb+ Vbe= Vcc

Diff. w. r. t. IC we get

+ V
BE

1+
1- (Ib/IC)
Applying KVL through base circuit

IE

(Ib / Ic) = - RC / (Rb + RC)

Therefore, SIco

(1+ )
1+ [RC/(RC+ Rb)]

Which is less than (1+), signifying better

thermal stability
Dr. D G Borse

The Potential Devider Bias Circuit

VCC

R1

Ib

The General Equation for Thermal Stability

Factor,
SIco
1+

VCC

1- (Ib/IC)

RC

IC

Applying KVL through input base circuit

C
B

we can write IbRTh + IE RE+ Vbe= VTh

E
R2

IC

Diff. w. r. t. IC & rearranging we get

VCC

Thevenin
Equivalent Ckt
Ib

RE

1
RE RTh

This shows that SIco is inversely proportional

to RE and
It is less than (1+), signifying better thermal
stability

C
B

RTh
E
VTh

Thevenins
Equivalent Voltage

(Ib / Ic) = - RE / (RTh + RE)

1
SIco
Therefore,

RC

IC

+
_

Therefore, IbRTh + (IC+ Ib) RE+ VBE= VTh

RE

RE

Self-bias Resistor

Rth = R1*R2 & Vth = Vcc R2

R1+R2
Dr. D G Borse R1+R2

A Practical C E Amplifier Circuit

VCC
Input Signal Source

VCC

R1

RC
C

ii
+
vs
_

Rs

+
vi

Ci
R2

io
Co
+

B
E
RE

_
Common Emitter (CE) Amplifier

Dr. D G Borse

RL
CE

vo
_

BJT Amplifier (continued)

If changes in operating currents and

voltages are small enough, then IC
and VCE waveforms are undistorted
replicas of the input signal.
A small voltage change at the base
causes a large voltage change at the
collector. The voltage gain is given
by:
~
~ vce 1.65180
206180 206
An 8 mV peak change in vBE gives a 5 Av ~
v
0.0080
be
A change in iB and a 0.5 mA change in
iC.
The minus sign indicates a 1800
The 0.5 mA change in iC gives a 1.65 V phase shift between input and
output signals.
change in vCE .
Dr. D G Borse

A Practical BJT Amplifier using Coupling and Bypass

Capacitors
In a practical amplifier design, C1 and C3 are
large coupling capacitors or dc blocking
capacitors, their reactance (XC = |ZC| = 1/C) at
signal frequency is negligible. They are
effective open circuits for the circuit when DC
bias is considered.

C2 is a bypass capacitor. It provides a low

impedance path for ac current from emitter to
ground. It effectively removes RE (required for
good Q-point stability) from the circuit when ac
signals are considered.
AC coupling through capacitors is used to inject an ac input signal
and extract the ac output signal without disturbing the DC Q-point
Capacitors provide negligible impedance at frequencies of interest
and provide open circuits at dc.

Dr. D G Borse

D C Equivalent for the BJT Amplifier (Step1)

DC Equivalent Circuit

All capacitors in the original amplifier circuit are replaced by open

circuits, disconnecting vI, RI, and R3 from the circuit and leaving RE
intact. The the transistor Q will be replaced by its DC model.

Dr. D G Borse

A C Equivalent for the BJT Amplifier (Step 2)

R1IIR2=RB

Ro

Rin

Coupling capacitor CC and Emitter bypass capacitor CE are replaced by short

circuits.
DC voltage supply is replaced with short circuits, which in this case is connected
to ground.
Dr. D G Borse

A C Equivalent for the BJT Amplifier

(continued)
All externally connected capacitors are
assumed as short circuited elements for ac
signal

R R R 10k 30k
B
1 2
R R R 4.3k 100k
C 3
By combining parallel resistors into equivalent RB and R, the equivalent AC
circuit above is constructed. Here, the transistor will be replaced by its
equivalent small-signal AC model (to be developed).

Dr. D G Borse

A C Analysis of CE Amplifier
1) Determine DC operating point and
Step 1

calculate small signal parameters

2) Draw the AC equivalent circuit of Amp.

DC Voltage sources are shorted to ground

DC Current sources are open circuited

Step
2

Large capacitors are short circuits

Large inductors are open circuits
3) Use a Thevenin circuit (sometimes a

Step
3

Norton) where necessary. Ideally the

base should be a single resistor + a single
source. Do not confuse this with the DC
Thevenin you did in step 1.

Step
4

4) Replace transistor with small signal model

5) Simplify the circuit as much as necessary.
Steps to Analyze a Transistor Amplifier
6) Calculate the small signal parameters and
gain etc.

Step
5

Dr. D G Borse

-model
used

Hybrid-Pi Model for the BJT

The hybrid-pi small-signal model is the

intrinsic low-frequency representation of
the BJT.
The small-signal parameters are
controlled by the Q-point and are
independent of the geometry of the BJT.

Transconductance:
I
g m C ,VT KT
q
V
T
Input resistance: Rin
oV
o
T
r

I
gm
C
Output resistance:
V V
ro A CE
I
C
Where, VA is Early Voltage
(VA=100V for npn)

Dr. D G Borse

Hybrid Parameter Model

Ii
Vi

Linear Two
port Device

Io
Vo

Vi h11 I i h12Vo hi I i hrVo

I o h21 I i h22Vo h f I i hoVo
Dr. D G Borse

h-Parameters
Vi
h11
Ii
Io
h21
Ii

Vo 0

Vi
h12
Vo

Ii 0

Vo 0

Io
h22
Vo

Ii 0

h11 = hi = Input Resistance

h12 = hr = Reverse Transfer Voltage Ratio
h21 = hf = Forward Transfer Current Ratio
h22 = ho = Output Admittance
Dr. D G Borse

Three Small signal Models of CE Transistor

The Mid-frequency small-signal models
ib

ic
c

b
hie

+
vbe

+
hrevce

+
_

hfe ib

hoe

vce
_

h-parameter model
ib

ic
c

b
+

vbe

gmv

rd

vce
_

e
hybrid- model

ib

ic
c

+
vbe

+
re

ib

vce
_
e

re model

38.92
IC (Note: Uses DC value of I C )
n
where n = 1 (typical, Si BJT)
1
o = h fe
rd =
h oe

gm =

h re = 0

Alternate names:
h fe = ac = o =

re =

r = h ie =

o
gm

26 mV
(Note: uses DC value of I B )
IB

o = h fe
o re = h ie
h re = 0
h oe = 0, or use rd =

Dr. D G Borse

1
h oe

BJT Mid-frequency Analysis using the hybrid- model:

VCC

VCC

R1

RC

Co

ii
Rs

vs

+
vi

Ci

R2

The mid-frequency circuit is drawn as follows:

the coupling capacitors (Ci and Co) and the

io

A common emitter (CE) amplifier

RL

RE

CE

bypass capacitor (CE) are short circuits

vo

short the DC supply voltage (superposition)

replace the BJT with the hybrid- model
The resulting mid-frequency circuit is shown below

is

ii

RS

+
vs

+
RTh

vi

_
e

io

c
+
r

+
gmv

rrod

RC

RL

_
mid-frequency CE amplifier circuit

A o g R ' , where, R ' r R R ,

v v
m L
L
o L C
i

Dr. D G Borse

i
A o o i A
vs v
v Z R
v v
s
i
s
s
i

A o Z i R r , where, R R R
i
i I
Th
Th
1 2
i
i

An a c Equivalent Circuit

vo
_

o v o
i

Details of Small-Signal Analysis for Gain Av (Using -model)

Rs

v g v R R r
o
m be C 3 o

R

Rs

From input circuit

r R
R , R C R3
o C
3
L

v
o be
A o
v v
v
v
i
i
be
v

v R
r
i
B

be

RS R B r

v I R g v R
m be L
o o L

A g R
v
m L

Dr. D G Borse

r
B

R R r
S B

C-E Amplifier Input Resistance

The input resistance, the total resistance

looking into the amplifier at coupling
capacitor C1, represents the total
resistance presented to the AC source.

v x ix ( R r )
B
vx
R
R r R R r
B
1 2
in i
x
Dr. D G Borse

C-E Amplifier Output Resistance

The output resistance is the total equivalent

resistance looking into the output of the
amplifier at coupling capacitor C3. The input
source is set to 0 and a test source is applied
at the output.
v
v
ix x x gm v
be
R
ro
C
But vbe=0.
v
Rout x R ro R
C
C
ix
since ro is usually >> RC.

Dr. D G Borse

HighFrequencyResponseBJTAmplifiers

Capacitancesthatwillaffectthehighfrequencyresponse:
Cbe,Cbc,Cceinternalcapacitances
Cwi,Cwowiringcapacitances
CS,CCcouplingcapacitors
CEbypasscapacitor
Dr. D G Borse

Frequency Response of Amplifiers

The voltage gain of an amplifier is typically flat over the mid-frequency
range, but drops drastically for low or high frequencies. A typical
frequency response is shown below.
For a CE BJT: (shown on lower right)
low-frequency drop-off is due to CE, Ci and Co
high-frequency drop-off is due to device capacitances Cp and Cm
(combined to form Ctotal)
Each capacitor forms a break point (simple pole or zero) with a break
frequency of the form f=1/(2pREqC), where REq is the resistance seen by
the capacitor
CE usually yields the highest low-frequency break
which establishes fLow.
LM(A vi ) = 20log(v o /vi ) [in dB]

LM Response for a General Amplifier

20log(A vi(mid))

BW

fLOW

Dr. D G Borse

3dB

fHIGH

Amplifier Power Dissipation

Static power dissipation in amplifiers is determined from their DC
equivalent circuits.
Total power dissipated in C-B
and E-B junctions is: PD VCE IC VBE IB
V V V
CE CB BE

Total power supplied is:

where

P V I I , where I I I
S
CC C 2
2 1 B
V
CC
I
and I
1 R R
B
R
1
2

V
EQ

EQ

The difference is the power dissipated by the bias resistors.

Dr. D G Borse

BE
1 R

Dr. D G Borse

Figure4.36aEmitterfollower.

Dr. D G Borse

An Emitter Follower (CC Amplifier) Amplifier

FigureEmitterfollower.
Very high input Resistance
Very low out put Resistance
Unity Voltage gain with no phase shift
High current gain
Can be used for impedance matching or a
circuit for providing electrical isolation

Dr. D G Borse

Figure4.36bEmitterfollower.

Dr. D G Borse

Figure4.36cEmitterfollower.

Dr. D G Borse

Capacitor Selection for the CE Amplifier

Zc

1
1
CapacitiveReactanceXc Z c
where 2f
jC
C

The key objective in design is to make the capacitive reactance

much smaller at the operating frequency f than the associated
resistance that must be coupled or bypassed.

X R r MakeX 0.01 R r for < 1%gainerror.

c1
B
c1
B
X 0MakeX 1for <1%gainerror.
c2
c2

X R MakeX 0.01 R for <1%gainerror.

c3
3
c3
3

Dr. D G Borse

Summary of Two-Port Parameters for

CE/CS, CB/CG, CC/CD

Dr. D G Borse

A Small Signal h-parameter Model of C E - Transistor

= h11
Vce*h12

Dr. D G Borse

A Simple MOSFET Amplifier

The MOSFET is biased in the saturation region by dc voltage sources VGS and
VDS = 10 V. The DC Q-point is set at (VDS, IDS) = (4.8 V, 1.56 mA) with VGS = 3.5
V.
Total gate-source voltage is: vGS VGS vgs
A 1 V p-p change in vGS gives a 1.25 mA p-p change in iDS and a 4 V p-p change
in vDS. Notice the characteristic non-linear I/O relationship compared to the BJT.
Dr. D G Borse

Eber-Moll BJT Model

The Eber-Moll Model for BJTs is fairly complex, but it is
valid in all regions of BJT operation. The circuit diagram
below shows all the components of the Eber-Moll Model:

IE

IC

RIC

RIE

IF

IR

IB

Dr. D G Borse

Eber-Moll BJT Model

R = Common-base current gain (in forward active mode)
F = Common-base current gain (in inverse active mode)
IES = Reverse-Saturation Current of B-E Junction
ICS = Reverse-Saturation Current of B-C Junction

IC = F IF I R

IB = I E - I C

IE = IF - RIR

IF = IES [exp(qVBE/kT) 1] IR = IC [exp (qVBC/kT) 1]

If IES & ICS are not given, they
can be determined using various
Dr. D G Borse

Small Signal BJT Equivalent Circuit

The small-signal model can be used when the BJT is in the active region.
The small-signal active-region model for a CB circuit is shown below:
B

iB

iC
r

iB

r = ( + 1) * VT
IE

@ = 1 and T = 25 C

r = ( + 1) * 0.026
IE

iE
E
Recall:

= IC / I B
Dr. D G Borse

The Early Effect (Early Voltage)

IC

Note: Common-Emitter
Configuration

IB

-VA

VCE
Green = Ideal IC
Orange = Actual IC (IC)

IC = IC

VCE + 1
VA

Dr. D G Borse

Early Effect Example

Given: The common-emitter circuit below with IB = 25 A,
VCC = 15V, = 100 and VA = 80.
Find:

a) The ideal collector current

b) The actual collector current

Circuit Diagram
VCE
IC

= 100 = IC/IB

a)
VCC

+
_

IC = 100 * IB = 100 * (25x10-6 A)

IB

IC = 2.5 mA
b)

IC = IC

VCE + 1
VA

= 2.5x10-3

15 + 1
80

IC = 2.96 mA
Dr. D G Borse

= 2.96 mA

Breakdown Voltage
The maximum voltage that the BJT can withstand.
BVCEO = The breakdown voltage for a common-emitter
biased circuit. This breakdown voltage usually
ranges from ~20-1000 Volts.
BVCBO =

The breakdown voltage for a common-base biased

circuit. This breakdown voltage is usually much
higher than BVCEO and has a minimum value of ~60
Volts.
Breakdown Voltage is Determined By:

The Base Width

Material Being Used

Doping Levels
Biasing Voltage
Dr. D G Borse

Potential-Divider Bias Circuit with Emitter Feedback

Most popular biasing circuit.
Problem: dc can vary over a wide range for BJTs (even with the same part number)
Solution: Adding the feedback resistor RE. How large should RE be? Lets see.
VCC

VCC

VCC

R1

RC

RC
C

C
B

Substituting the active region model into

the circuit to the left and analyzing the
circuit yields the following well known
equation:

RTh
E

E
R2

+_

RE

Voltage divider biasing

circuit with emitter
feedback

IC =

VTh
RE

Replacing the input circuit by a

Thevenin equivalent circuit yields:

R2

R1 + R 2

VTh = VCC

and R Th = R1 R 2

dc VTh - Vo + ICEO R Th + R E
R Th + dc + 1 R E

where ICEO = dc + 1 ICBO

ICEO has little effect and is often

neglected yielding the simpler
relationship:
dc VTh - Vo
IC =
R Th + dc + 1 R E

Test for stability: For a stable Q-point w.r.t. variations in dc choose:

R Th << dc + 1 R E

Why? Because then

dc VTh - Vo
V - Vo
IC =
dc Th
R Th + dc + 1 R E
dc + 1 R E

Dr. D G Borse

VTh

- Vo
RE

(independent of dc )

PE-Electrical Review Course - Class 4 (Transistors)

Example :
15 V

15 V

200 k

1k

Find the Q-point for the biasing circuit shown below.

The BJT has the following specifications:
dc = 100, rsat = 100 (Vo not specified, so assume Vo = 0.7 V)

C
B

Example :

Repeat Example 3 if RC is changed from 1k to 2.2k.

Dr. D G Borse

PE-Electrical Review Course - Class 4 (Transistors)

Example
18 V

18 V

30 k

10 k
C
B

Determine the Q-point for the biasing circuit shown.

The BJT has the following specifications:
dc varies from 50 to 400, Vo = 0.7 V, ICBO = 10 nA
Solution:
Case 1: dc = 50

E
15 k

8k

Case 2: dc = 400 Similar to Case 1 above. Results are: IC = 0.659 mA, VCE =
6.14 V Summary:

Dr. D G Borse

PE-Electrical Review Course - Class 4 (Transistors)

VCC
R1

RC
io

C
Rs

vs

Ci

vi

Using the hybrid- model.

Co

ii
+

BJT Amplifier Configurations

and Relationships:

VCC

R2

RL

RE

CE

_
Common Emitter (CE) Amplifier
E

ii
Rs

io
Co

Ci
B

+
vi

vs

RL

R1

C2

R2

-g m R

R 'L

rd R C R L

Zi

R Th r

vo

Zo

rd R C

VCC

AI
AP

C
ii

vs
_

+
vi

Ci
R2

B
E
RE

'
L

R E r

1
gm

rd R C

Zi
A vi

R s + Zi

Zi

R L

A vi i
R L
A vi A I

A vi

A vi A I

1 + o R 'L
+ 1 + o R 'L

rd R C R L

Zi

R s + Zi

A vi

VCC

R1

Rs

gmR

CC

Common Base (CB) Amplifier

'
L

A vi

A vs
VCC

CB

RC

RE

CE

vo

RE RL
R Th r + 1 + o R 'L
r + R Th R S

RE

1 + o

A vi

Z i

R s + Zi

where R Th = R 1 R 2

io
Co

+
RL

vo
_

Common Collector (CC) Amplifier (also called emitter-follower)

Dr. D G Borse

Zi
RL

A vi

Note: The biasing circuit is

the same for each amplifier.

A vi A I

Figure4.16ThepnpBJT.

Dr. D G Borse

Figure4.17CommonemittercharacteristicsforapnpBJT.

Dr. D G Borse

Figure4.18CommonemitteramplifierforExercise4.8.

Dr. D G Borse

Figure4.19aBJTlargesignalmodels.(Note:Valuesshownareappropriatefortypicalsmallsignalsilicondevicesat
atemperatureof300K.

Dr. D G Borse

Figure4.19bBJTlargesignalmodels.(Note:Valuesshownareappropriatefortypicalsmallsignalsilicondevicesat
atemperatureof300K.

Dr. D G Borse

Figure4.19cBJTlargesignalmodels.(Note:Valuesshownareappropriatefortypicalsmallsignalsilicondevicesat
atemperatureof300K.

Dr. D G Borse

Dr. D G Borse