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PROCESSING
CZOCHRALSKI METHOD
Wafers are cut from ingots of single
crystal silicon
that have been pulled from a crucible
melt of pure molten polycrystalline
silicon.
This is known as the Czochralski
method and is currently the most
common method for producing single
crystal material.
Czochralski method
OXIDATION
Many
of
the
structures
and
manufacturing techniques used to make
silicon integrated circuits rely on the
properties of the oxide of the silicon,
namely, silicon dioxide (SiO2 ).
Therefore the reliable manufacture of
SiO2 is extremely important.
Oxidation of silicon is achieved by
heating silicon wafers in an oxidizing
atmosphere such as oxygen or water
vapor.
SELECTIVE DIFFUSION
To create different types of silicon.
The ability of SiO2 to act as a barrier
against doping impurities is a vital factor
in this process called selective diffusion.
The SiO2 layer may be used as a pattern
mask.