VLSI Design

Device Modeling (2) 20-916

By Prof. Parag P.

 Model development is restricted to nchannel transistor. The same set of rules

will be applied for the p-channel with
the exception of sign changes.

DC MOSFET Model
The experimentally obtained Id-VDS
characteristics as a function of VGS for a
typical MOSFET is as shown in the following
figure.
To contain the mathematical model of
MOSFET which will accurately predict the
experimental characteristics over a wide
range of geometrical and process parameters

 The dc model of the MOSFET is

which was derived for small values of V DS.

Small value of VDS corresponds to ohmic region of
operation.
In this equation, L = channel length, K =
transconductance parameter, VT = threshold voltage.
K and VT are process parameters.
L and W are design parameters (also called as
dimensions of the channel), are under designers
control, only their ratio appears in the device model.
The W/L ratio (aspect ratio) is the only geometrical
design parameter available to the design engineer that
affects the performance of MOS transistors.
VT is somewhat voltage dependent.

 A plot of ID verses VDS is plotted as

under for several values of VGS.

 The region of characteristics where the

equation

Is valid is called ohmic, linear, or active region.

The point where the partial derivative of ID
with respect to VDS is zero is easily found to be
VDS = VGS - VT
This value of VDS causes the channel to pinch
off. For VDS > VGS VT , the current remains
practically constant (independent of V DS) at the
value obtained when the channel first pinches
off. This value is obtained by putting VDS = VGS
VT , we get

 Which is good for VDS > VGS VT and VGS

> VT.
This region of operation is called as
saturation region. These are called as
Ideal equations.
Here ID is independent of VDS.
Saturation region for MOSFET does not
corresponds to saturation region of BJT.
MOSFET is operated in saturation
regions in most of linear applications. It

 But it can be shown both theoretically

and experimentally that the drain
current in the saturation region
increases slightly in approximately in a
linear manner with VDS.
This is physically due to slight
shortening of channel as VDS is
increased in saturation region.
Representing to be the coefficient
that represents linear dependence of ID
over VDS, more accurate expression for
drain current in saturation region is
given by

 The parameters is called as channel length

modulation and is counted as second order
effect of the MOSFET.
These are given as non-ideal equation.
This is unrelated to the parameter which is
used to represent the feature size.
The threshold voltage VT is somewhat
dependent upon the bulk-source voltage.
This approximation can be approximated by
the following equation: