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Content
Objectives
What is LED?
4 Main Issues
By the end of this lecture you must be able to
For the LED lectures you need:
Construction of Typical LED
Injection Luminescence in LED
LED Construction
References
3 Lectures on LED
OBJECTIVES:
To learn the basic design principles of LED
To relate properties of semiconductor material to the
principle of LED
To be able select appropriate materials for different types of
LED
To be able to apply knowledge of band gap engineering to
design appropriate materials for a particular LED
To acknowledge other materials that can and have been
used in LED
What is LED?
ct
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n
co g
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m rin
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or alit t!
qu ligh
to
LED are semiconductor p-n junctions that under forward bias conditions can emit
radiation by electroluminescence in the UV, visible or infrared regions of the
electromagnetic spectrum. The qaunta of light energy released is approximately
proportional to the band gap of the semiconductor.
4 Main Issues
1.
2.
3.
4.
Complete
set
of
notes
(3
lecture
presentation and lecture notes)
A photocopy from Kasap (p.139-150)
A photocopy from Wilson (p-141-155)
Some reading materials
Applications of LEDs
excitation
results from the application of an
electric field
In a p-n junction diode injection
electroluminescence occurs resulting in
light emission when the junction is
forward biased
P-n
junction
Recombination
produces light!!
Electrical
Contacts
Injection Luminescence
in LED
Under forward bias majority carriers from both sides of the junction
can cross the depletion region and entering the material at the other
side.
Upon entering, the majority carriers become minority carriers
For example, electrons in n-type (majority carriers) enter the p-type
to become minority carriers
The minority carriers will be larger minority carrier injection
Minority carriers will diffuse and recombine with the majority carrier.
For example, the electrons as minority carriers in the p-region will
recombine with the holes. Holes are the majority carrier in the pregion.
The recombination causes light to be emitted
Such process is termed radiative recombination.
n+
ECEg
EF
EV
(b)
n+
Eg
h =Eg
eVo
Electrons in CB
Holes in VB
Ideal LED will have all injection electrons to take part in the recombination
process
In real device not all electron will recombine with holes to radiate light
Sometimes recombination occurs but no light is being emitted (non-radiative)
Efficiency of the device therefore can be described
Efficiency is the rate of photon emission over the rate of supply electrons
Emission wavelength, g
If the transition take place between states (conduction and valance bands) the
emission wavelength, g = hc/(EC-EV)
EC-EV = Eg
g = hc/Eg
Calculate
Al
SiO2
p
n
Electrica
l
contacts
Substrate
LED Construction
Efficient LED
Direct band
gap
Materials
Requirements
Efficient radiative
pathways must
exist
Material can be
made p and ntype
UV-ED ~0.5-400nm
Eg > 3.25eV
LED - ~450-650nm
Eg = 3.1eV to 1.6eV
IR-ED- ~750nm- 1nm
Eg = 1.65eV
Candidate Materials
Materials with refractive
index that could allow
light to get out
Reference
www.google.com
www.wikipedia.com
www.studymafia.org
www.pptplanet.com
www.pdfclass.com
Thanks