High Frequency Amplifier Design

The Shunt Peaked Amplifier:

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Shunt Peaking Amplifier Summary

Condition

m=R2C/L

Normalized
Bandwidth

Normalized
Peak
Frequency
Response

Maximum
Bandwidth

1.41

1.85

1.19

|Z|=R @
=1/RC

1.8

1.03

Maximum Flat 2.41

Frequency
Response

1.72

Best Group
Delay

3.1

1.6

No Shunt
Peaking

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A Design Example : 1.5 GHz Wide Band Amplifier

The Shunt Peaked Amplifier:

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Two Port Bandwidth Enhancement

The performance of shunt peaking can be increased by

separating the load capacitance from the output capacitance.

Shunt and series Peaking

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Shunt and double series Peaking

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Design of Low Noise Amplifier (LNA)

LNA is the first component of the wireless receiver and must

provide sufficient gain and Bandwidth at high frequency, low
noise figure and low power consumption.

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Noise in Amplifiers

The sensitivity of communication system is limited by noise.

Simply cascading more amplifiers eventually produces no
further improvement in sensitivity because a fundamental
noise source exist that is amplified along with the signal
Noise is random
Has to be treated statistically cant predict actual
value
Deal with mean (average), variance, spectrum

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Thermal Noise of a Resistor

Origin: Brownian Motion
Thermally agitated particles
e.g. ink in water, electrons in a conductor
Available noise power: PN=KBTf
Because of thermal origin we would expect a dependence
on the absolute temperature. It turns out that thermal noise
power is exactly proportional to T with proportionality
constant of K.
Noise power in bandwidth f delivered to a matched
load
Example: f = 1Hz PN = 4 x 10-21W = -174 dBm
Reference: J.B. Johnson, Thermal Agitation of
Electricity in conductors, Phys. Rev., pp. 97-109, July
1928.

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Resistor Noise Model

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Thermal Noise

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Noise of Passive Networks

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Thermal Noise in MOSFET

Since FETs are essentially voltage-controlled resistors,
they exhibit thermal noise.

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Strong Inversion Noise

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Thermal Noise for Short Channels

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Gate Noise of MOSFET

In addition to drain current noise thermal agitation of channel

charge lead to gate noise.

The fluctuating channel potential couples capacitively into the

gate terminal, leading to noisy gate current

Although this noise is negligible at low frequency, it can

dominate at radio frequency.

Van der Ziel, in Noise in Solid State Devices and Circuits,

John wiley has shown that

Where gate noise coefficient =2=4/3 for long channel device

and the parameter gg is
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Gate Noise of MOSFET

Gate Noise Circuit model of MOSFET

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FET Noise Model

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Flicker Noise (1/f Noise)

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1/f Noise corner freqeuncy

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2-Port Noise Theory

The net effect of all of the different types of noise source can be
represented by just one pair of external sources : a noise voltage
and a noise current.

The noise factor (F) is defined as

F=(total output noise power/ output noise due to input source)

Noisy 2-port Driven by Noisy

source

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Equivalent Noise Model

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Noise Figure

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Cascaded Noisy stage

Derive a formula for the overall noise figure of a cascade of systems,
as shown in Figure below. Here each noise factor F is computed with
respect to the output impedance of the previous stage. Furthermore,
each power gain G is the available power gain that is, the power
available under matched conditions. From your formula what do you
deduce about the relative contributions to noise figure of earlier versus
later stage?

See Bosco Leung pg. 60-61

F= F1 + (F2-1)/G1 + (F3-1)/G1G2+ . (FN-1)/G1G2GN-1
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LNA Topologies : Power Match versus Noise Match

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Single Ended LNA

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Differential LNA

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Differential LNA

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Narrowband LNA : Impedance Matching

See Bosco Leung pg. 89-98

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