Beruflich Dokumente
Kultur Dokumente
Lecture-4
Outlines
RF Receiver Component
o RF Limiter
Operation, Characteristics and
Design
Types
Cascade, Narrowband and Wideband
2
RF Limiter
RF Limiter Application
Limiter in RF Receiver
Limiter in Transcevier
RF Limiter
Limiters are used to protect sensitive electronics from
damage due to exposure to high levels of RF signal.
The most common application of limiters is to protect
the Radar receiver from damage from its own
transmitter.
RF energy is transmitted
through
the
Receiver
Protector (RP) during this
turn-on
delay;
this
phenomenon is termed as
spike leakage.
Reduction in spike leakage ---- increases the
receivers
sensitivity.
PIN diode are used extensively in Limiter circuits.
Limiters Operation
Limiters Types
Limiter Characteristics
10
Limiter Design
Var
Eqn
HARMONIC BALANCE
VAR
Pin
RFPower=-80
HarmonicBalance
HB1
Freq[1]=2 GHz
Order[1]=5
SweepVar="RFPower"
Start=-80
Stop=40
Step=1
Pin
Pout
P_1Tone
PORT2
Num=2
Z=50 Ohm
P=dbmtow(RFPower)
Freq=2 GHz
PIN_diode
PinDiode1
C
C2
C=1 pF {t}
Term
Term1
Num=1
Z=50 Ohm
L
L1
L=5 nH {t}
R=
20
0
dBm(Pout[::,1])
C
C1
C=1 pF {t}
m1
-20
-40
-60
m1
RFPower=-20.000
dBm(Pout[::,1])=-20.149
-80
-100
-80
-60
-40
-20
RFPower
20
40
Start=-80
Stop=40
Step=1
Limiter Design
Pin
Pout
PIN_diode
PinDiode1
L
L1
L=5 nH {t}
R=
C
C2
Term
C=1 pF {t}
di_sms_bas125_19930908 Term1
Num=1
D2
Z=50 Ohm
20
dBm(Simple1..Pout[::,1])
dBm(Pout[::,1])
C
C1
P_1Tone C=1 pF {t}
PORT2
Num=2
Z=50 Ohm
P=dbmtow(RFPower)
Freq=2 GHz
cont.
m1
-20
-40
-60
m1
RFPower=-20.000
dBm(Pout[::,1])=-20.149
-80
-100
-80
-60
-40
-20
RFPower
20
40
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RF Limiter Products
13
14
15
Low-Noise Amplifier
First Gain Stage in Receiver
Amplify weak signal
NF frontend NFLNA
NFsubsequent 1
GLNA
Impedance Matching
Efficient power transfer
Better noise performance
Stable circuit
16
LNA Design
Consideration
Noise performance
Power transfer
Impedance matching
Power consumption
Bandwidth
Stability
Linearity
17
Noise Approximation
Noise spectral
density
1/f noise
Thermal noise
dominant
Thermal noise
Band of interest
Frequency
18
Sources of Amplifiers
Noise
e main sources of amplifier noise are:
Thermal Noise
Resistive components
Shot Noise
Semiconductor junctions
Flicker Noise
All components
Thermal noise and shot noise are both white and are irreducible.
Flicker noise is pink and can be controlled.
The noise performance of an amplifier can be quantified by either
its Noise Figure or Noise Temperature.
Thermal Noise
Random motion of electrons in a conductor
(Brownian motion) causes thermal noise.
It is a white Gaussian noise voltage of
magnitude:
vn 4kTRB
k = Boltzmanns constant
T = Temperature [Kelvin]
R = Resistance
B = Bandwidth
White Noise
Shot Noise
Dominates in semiconductor devices when
carriers are diffusing. (In conductors,
thermal noise is usually much bigger)
-
Flicker Noise
Imperfections in the fabrication of a
component cause flicker noise. Unlike
thermal noise and shot noise, flicker noise is
not white; it is pink.
Also, it can be reduced depending on the
quality of the component.
KIB
KI
in
[A rms ] or in
[A rms / Hz ]
f
f
f = frequency,
K = component dependent constant.
Noise power is inversely proportional to
frequency i.e. pink noise.
Noise Figure
Definition
SNRin
Sin N in
NF
As a function of device
N device G N source
NF
G N source
NF in Cascaded Stages
Sin/Nin
Sout/Nout
G1, N1,
NF1
Gi, Ni,
NFi
GK, NK,
NFK
G G1 G2 G3 Gn
NF2 1 NF3 1
NFK 1
NF 1 NF1 1
...
G1
G1G2
G1G2 ...GK 1
Flicker noise
Vg
Id
I d2 ( f ) 4kT g m
Thermal noise
Vi
k
Input-inferred
V 2 ( f ) 4kT
noise
i
gm
WLCox f
27
Power Matching
28
Power Matching
cont.
29
NF and IP3
NF and IP3
cont.
31
S - parameters
32
Stability
Stern stability factor (k)
33
Simulated Results
34
Power Consumption
L2 Rs2
1
P 2 3
0 Ls (1 Lg / Ls )
NF
Technology constant
4 Ls
1
Lg Ls
Standard specification
Rs: source impedance
0: carrier frequency
Circuit parameter
Lg, Ls: gate and source degeneration
inductance
35
Cascode LNA
LL
Vbias
Rs
M2
Vo
Vd1
Lg
M1
Vs
Isolation to improve
S12 @ high frequency
Small range at Vd1
Reduced feedback
effect of Cgd
Ls
Improve noise
performance
36
38
Example
Assume Rs = 50 Ohms, Q = 2, fo = 1.8 GHz, ft = 47.8 GHz,
calculate the parasitic capacitance and inductances , such as
Cgs, Ldeg, Lg.
1
From
2 Rs0C gs
1
1
C gs
442 fF
2 Rs0Q 2(50)2 1.8e9(2)
Ldeg
Rs C gs
gm
Rs
50
0.17 nH
T 2 47.8e9
1
1
Lg 2
Ldeg 17.5nH
( Lg Ldeg )C gs
0 C gs
2
0
39
Types of Narrowband
LNAs
Differential cascade LNA
Differential cascade LNA with tuned
LC tank
Cascade with inter-stage matching
Cascode for low voltage
40
41
Differential LNA
Differential LNA
Value of Ldeg is now much better controlled
Much less sensitivity to noise from other circuits
But:
Twice the power as the single-ended version
Requires differential input at the chip
42
43
44
Folded cascode
Low supply
voltage
Ld reduces or
eliminates
Effect of Cgd1
Good fT
45
Wideband LNAs
46
47
Summary
Sensitive front-end receiver is a commercial
applications, e.g. as Global Positioning Systems
(GPS), need to protect by using limiter circuit
against excessive RF and microwave power levels (
8-10 W).
The limiter circuit can consist of single or multiple
cascaded diodes separated by /4. Adding a directional
coupler and Schottky detector diode to the system can
lower the threshold level.
LNAs useful to reduce the overall NF of Rx, usually two
transistor stages needed for gain and in/out isolation
/e.g. cascode/
Narrowband LNAs are flexible in design to achieve lower NF
due to LC circuits and negative feedback.
Nonlinearities
are
difficult
to
estimate,
circuit
48
Thank you !
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