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1. Intrinsic Semiconductor.
2. Extrinsic Semiconductor.
a. n-type Semiconductors.
b. p-type Semiconductors.
Semiconductor in pure
form is known as Intrinsic
Semiconductor.
Si Si Si
FREE ELECTRON Ex. Pure Germanium, Pure
Silicon.
Si Si Si
HOLE At room temp. no of
electrons equal to no. of
holes.
Si Si Si
Fig 1.
Conduction Band
FERMI
Energy in ev
LEVEL
Valence Band
Fig 2.
Fermi level lies in the middle
RAMADHURAI AP/ECE GSBT 3
Extrinsic
Semiconductor
N-type P-type
Pentavalent impurities Trivalent impurities are
are added. added.
Majority carriers are Majority carriers are
electrons. holes.
Minority carriers are Minority carriers are
holes. electrons.
Fermi level is near the
Fermi level is near the
valence band.
conduction band.
Pure
N-type
As si
Si
Fig 1.
Pure
P-type
Ga si
Si
Fig 2.
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P-type Semiconductor
- - - + + + +
-
- + + + +
- - -
- + + +
- -
Fig 3.
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Comparison of semiconductors
1. Drift Process.
2. Diffusion Process.
A B
CB
VB
Fig 4. V
X=a
Fig 5.
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P and N type Semiconductors
- - - + + + +
-
- + + + +
- - -
- + + +
- -
Fig 1.
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Formation of pn diode
Depletion Region
P N
- - - + + + +
-
- + + + +
- - -
- + + +
- -
Fig 2.
Potential barrier
Vb
RAMADHURAI AP/ECE GSBT 19
Formation of pn diode
A K
Fig 3.
Arrow head indicates the direction of
conventional current flow.
P N
Potential barrier
Fig. 2 Working of P-N junction
RAMADHURAI AP/ECE GSBT 26
Forward Bias
An ext. Battery applied with +ve on p-side, ve on n-
side.
P N
Potential barrier
Fig 1.
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JUNCTION PROPERTIES
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(Contd..)
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V-I Characteristics of P-N Junction Diode
Fig 2.
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(Contd)
IF(mA)
Forward bias
Breakdown voltage
VR(V) VF(V)
Cutin voltage
Reverse Bias
IR(uA) Fig 3.
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Diode Current
I I 0 (e 1)
nVt
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Resistance calculation
IF(mA)
Forward bias
Breakdown voltage
V
If
Vr I
VR(V) VF(V)
Vf
Ir Cutin voltage
Reverse Bias
IR(uA) Fig 4.
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Resistance calculation
Forward Resistance
1. Dynamic resistance (rf)= V/ I ..ohms.
Reverse Resistance:
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Diode-Variants
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(contd)
Light Emitting Diodes (LED) :
Display
Light source in Fiber optic comm.
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Semiconductor diodes
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(contd)
Second Standard
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(contd..)
Second Letter: For device type and function
A= Diode.
B= Varactor.
C= AF Low Power Transistor.
D= AF Power Transistor.
E= Tunnel Diode.
F= HF Low Power Transistor.
L= HF Power Transistor.
S= Switching Transistor.
R= Thyristor/Triac.
Y= power device.
Z= Zener.
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(contd..)
Third Letter: Tolerance
A :1%.
B :2%.
C :5%.
D :10%.
Examples:
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Lead Identification:
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Specifications
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Specifications (contd)
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Applications
Invented by C.Zener.
Anode cathode
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PHOTOS OF ZENER DIODES
K K
A A
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PHOTOS OF ZENER DIODES
In forward bias
Rf
Acts as a
closed
switch.
Ideal Practical
Fig 5. Equivalent circuit in forward bias
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EQUIVALENT CIRCUIT
in reverse bias
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EQUIVALENT CIRCUIT
in reverse bias
RZ
For the
voltage Acts as a
above break constant
down voltage voltage
Vz Vz
Vz source
Ideal Practical
Fig 7. Equivalent circuit of zener diode for voltage above Vz
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ZENER BREAK DOWN
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ZENER BREAK DOWN MECHANISM
Depletion Region
P N
- - - - + + + + +
-
- - - + + + + +
+
- - -
+ +
- - - - + +
Depletion Region
P N
- - - - + + + + +
-
- - - + + + + +
+
- - -
+ +
- - - - + +
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ZENER BREAK DOWN
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AVALANCHE BREAK DOWN
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AVALANCHE BREAKDOWN MECHANISM
Depletion Region
P N
- - - + + + +
-
- - - + + + + +
+
- - -
- + +
- - - + +
Depletion Region
P N
- - - + + + +
-
- - - + + + + +
+
- - -
- + +
- - - + +
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AVALANCHE BREAK DOWN
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AVALANCHE BREAK DOWN
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Differences between Zener and Avalanche
break downs.
1. Occurs in heavily doped 1. Occurs in lightly doped
diodes. diodes.
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FORWARD BIAS CHARACTERSTICS
Anode cathode
V
Fig 1. zener diode in forward bias
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FORWARD BIAS
CHARACTERSTICS
IF(mA)
VF(V)
Cutin voltage
Fig2. Forward bias charactersticas of zener diode
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FORWARD BIAS CHARACTERSTICS
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REVERSE BIAS CHARACTERSTICS
Anode cathode
V
Fig 3. Zener diode in Reverse bias
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REVERSE BIAS CHARACTERSTICS
ZenerBreakdown
VR(V)
Vz
Reverse Bias
IR (uA)
Fig 4. Reverse Bias characterstics of zener diode
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REVERSE BIAS CHARACTERSTICS
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VI CHARACTERISTICS
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SPECIFICATIONS OF ZENER DIODE
Specifications of 1n746 zener diode.
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SPECIFICATIONS OF ZENER DIODE
Specifications of 1n746 zener diode.
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