Chapter 2

Semiconductor Power Switches

Introduction to Modern Power Electronics, 2nd Ed., John Wiley 2010

by
Andrzej M. Trzynadlowski

1
Waveforms of voltage, current, and power loss
in a semiconductor power switch

v
t

tO N T tO FF

p = vi

Fig. 2.1

Chapter 2 2
Power diode: (a) semiconductor structure, (b)
circuit symbol

ANODE A

p
V
n

CATHODE C

(a ) (b )

Fig. 2.2

Chapter 2 3
Static voltage-current characteristic of the
power diode
I

I FM V FM

V RB
V

IRM

Fig. 2.3

Chapter 2 4
Voltage and current waveforms during the
reverse recovery period in a power diode

IF
i
t rr
VF
v t
i rr d i rr VR
I rrM dt
VRM

Fig. 2.4

Chapter 2 5
Chapter 2 6
SCR: (a) semiconductor structure, (b) circuit
symbol

ANO D E

p A

p G ATE
V
n
G
iG
I

CATH O D E C

(a ) (b )
Fig. 2.5

Chapter 2 7
Static voltage-current characteristic of the
SCR
I
IF V TM

iG > 0
IL iG = 0
V RB IH
V
V FB

Fig. 2.6

Chapter 2 8
SCR gate voltage signals: (a) single pulse, (b)
multipulse

0 t

(a)

vG

0 t

(b)

Fig. 2.7

Chapter 2 9
 Anode voltage and current waveforms during
forced commutation of the SCR

IF tOFF
i
t rr VD
VF
v t

VR

Fig. 2.8

Chapter 2 10
Chapter 2 11
Triac: (a) semiconductor structure, (b) circuit
symbol

M A IN T E R M IN A L 2

M T2

n
p

n
V
p G ATE
n n G
iG
I

M A IN T E R M IN A L 1 M T1

(a ) (b )

Fig. 2.9

Chapter 2 12
GTO: (a) semiconductor structure, (b) circuit
symbol

ANO DE

n p G

G ATE

CATHO D E C

(a ) (b )

Fig. 2.10

Chapter 2 13
Circuit symbol of the IGCT

V
G
iG
I

Fig. 2.11

Chapter 2 14
Chapter 2 15
BJT: (a) semiconductor structure, (b) circuit
symbol

C O LLEC TO R

n IC

BASE p
B VCE
n IB

IE

E M IT T E R E

(a ) (b )

Fig. 2.12

Chapter 2 16
 Static voltage-current characteristic of the BJT

IC

H A R D S A T U R A T IO N L IN E
ON
Q U A S I- S A T U R A T IO N L IN E
IB

OFF
VCE

Fig. 2.13

Chapter 2 17
Base current and collector current waveforms
for turn-on and turn-off of a BJT

iB
IB
0 .9 I B

0 .1 I B
t

tON t O FF

iC
IC
0 .9 I C

0 .1 I C
t

Fig. 2.14

Chapter 2 18
 BJT Darlington connections: (a) two-transistor,
(b) three-transistor

E E

(a ) (b )

Fig. 2.15

Chapter 2 19
Power MOSFET: (a) semiconductor structure,
(b) circuit symbol

D R A IN
D
O X ID E

n
ID
M ETAL

G ATE p
V DS
G
n

SO URC E S

(a ) (b )

Fig. 2.16

Chapter 2 20
 Voltage-current characteristics of power
MOSFET

ID

C O N S T A N T R E S IS T A N C E L IN E S O N

VGS

O FF
V DS

Fig. 2.17

Chapter 2 21
Chapter 2 22
 IGBT: (a) equivalent circuit, (b) circuit symbol

IC
G
VCE
G

E E

Fig. 2.18

Chapter 2 23
Voltage-current characteristics of IGBT

IC

O N

VGE

O FF
VCE

Fig. 2.19

Chapter 2 24
Chapter 2 25
 Safe operating area for a power MOSFET

P E A K - C U R R E N T L IM IT
ID
A V E R A G E -C U R R E N T L IM IT

TEM P ER ATU R E
L IM IT

t= 0 .1 m s
O N - S T A T E R E S IS T A N C E L IM IT

t= 1 m s

SO A
t=
P E A K - V O L T A G E L IM IT

V DS

Fig. 2.20

Chapter 2 26
Chapter 2 27
Example diode and SCR modules

(a ) (b )

(c ) (d )

Fig. 2.21

Chapter 2 28
Example power BJT (Darlington) modules

(a ) (b )

(c )

Fig. 2.22

Chapter 2 29
Example power MOSFET modules

(a ) (b )

(c )

Fig. 2.23

Chapter 2 30
IGBT-based modular frequency changer

Fig. 2.24

Chapter 2 31