SHREE SWAMINARAYAN INSTITUTE OF TECHNOLOGY

Gandhinagar (Bhat)
DEPARTMENT OF ELECTRICAL ENGINEERING
Power Electronics Laboratory
POWER SEMICONDUCTOR DEVICES
Power electronics is the application of solid-state electronics to the control
and conversion of electric power. It also refers to a subject of research in
electronic and electrical engineering which deals with the design, control,
computation and integration of nonlinear, time-varying energy-processing
electronic systems with fast dynamics.
SCR
LASCR
Power Semiconductor

Diode ASCR
GTO
SITH
Devices

Thyrist MCT SC RCT GT TRIA

ors R O C
TRIAC
BJT
Transis MOSFET
tor SIT
BJT MOSF IGBT
IGBT
ET MODULE
S.N DEVIC NAME CIRCUIT VOLTAGE/ OPERATI APPLICATION
O E SYMBOL CURRENT NG
RATINGS FREQUEN
CY
1 Diode Diode 5000V/5000A 1kHz Rectification
2 SCR Silicon Controlled 7000V/5000A 1kHZ Simple Power
Rectifier Control
circuits
3 LASCR Light Activated 6000V/3000A 1kHZ Low power
Silicon Controlled applications
Rectifier
4 RCT Reverse 2500V/400A 2kHZ Reverse
Conducting conduction
Thyristor
5 GTO Gate Turn Off 5000V/3000A 2kHZ HVDC, Low
Thyristor switching
frequency
6 MCT MOS Conducting 1200V/40A 20kHZ High power
Thyristor conversions,
UPS
8 TRIAC Triode for 1200V/1000A 0.5kHZ Voltage
Alternating regulators
Current
9 BJT Bipolar Junction 1400V/400A 10kHZ Switch-
Thyristor open,closed
10 MOSF Metal Oxide 1000V/50A 100kHZ Signal
ET Semiconductor amplifier,
Field effect electronic