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OBJECTIVE
Describe the characteristic of zener diode
and analyze its operation.
Explain how a zener diode is used in voltage
reference, regulation and limiting
applications.
Troubleshoot zener diode regulators.
INTRODUCTION
Zener diode silicon pn-junction device
that is designed for operation in the
reverse-breakdown region.
The basic function of zener diode is to
maintain a nearly constant dc voltage
under proper operating condition.
Typically it is used to provide a stable
reference voltage for use in power
supplies, voltmeter and other equipment.
Zener diode symbol
INTRODUCTION
i) avalanche breakdown
- occurs in both rectifier & zener diodes at high
reverse voltage
- breakdown voltage greater than approximately 5V
CHARACTERISTIC CURVE
BREAKDOWN CHARACTERISTIC
The reverse voltage (VR) is increased the reverse
current (IR) remains extremely small up to the
knee of the curve.
Reverse current called the zener current, IZ.
At that point, breakdown effect begin where zener
impedance (Zz) begin to decrease as IZ increases
rapidly.
At the bottom of the knee- the zener breakdown
voltage (VZ) remains constant although it increase
slightly as the zener current, IZ increase.
IZK min. current required to maintain voltage
regulation
IZM max. amount of current the diode can handle
without being damage/destroyed
IZT the current level at which the VZ rating of
diode is measured (specified on a data sheet)
ZENER EQUIVALENT
CIRCUIT
Zener impedance
VZ 50 mV
ZZ 10
I Z 5mV
The amount and type
of information found on
Datasheets for zener
Diodes.
The temperature coefficient (Tc) can be used to find change in Vz due to change in
Temperature using
VZ VZ
Tc 100% / C
o
T1 To
where, VZ = nominal zener voltage at the reference temperature of 25oC.
TC = temperature coefficient.
T1 = new temperature level.
T0 = reference temperature of 25oC.
The temperature coefficient specifies the percent change in zener voltage for each oC
change in temperature. For example, a 12 V zener diode with a positive temperature
coefficient of 0.01%/oC will exhibit a 1.2 mV increase in VZ when the junction
temperature increases one Celsius degree. VZ = VZ TC T
Where VZ is the nominal zener voltage at 25 oC, TC is the temperature coefficient, and
T is the change in temperature.
Ex 3-3 An 8.2 V zener diode (8.2 V at 25 oC) has a positive temperature coefficient of 0.05
%/oC. What is the zener voltage at 60 oC?
PD I ZVZ
ZENER POWER DERATING
The maximum power dissipation of a zener diode is specified for
temperature at or below a certain value (50oC, for example).
Above the specified temperature, the maximum power dissipation is
reduced according to a derating factor. The derating factor is expressed
in mW/oC.
The maximum derated power can be determined with the following
formula:
VR Izener
For max. ZM R (100
current, ) 22
mA)( 220the V
voltage across
resistor
V is: 22V 10V 32V
IN (max)
Thus
Zener diode can ideally regulate an input voltage from 10.055 V to 32 V and
maintain an approximate 10 V output
VZ
12
R L(min) 490
Step 4: The minimum I L(max) value
24.5 of RL is:
Ex 3-8
Figure below shown a 1N4733 zener regulated
circuit. Given VZ = 10 V at IZT = 10mA,IZK = 5mA,
ZZ = 20 and IZM = 20mA. Determine the
maximum permissible load currents.
First step..
The change in zener voltage,
V Z I Z Z Z
The change in zener current,
I I I ZK @ I ZM I ZT
Z ZT
Zener voltage for min and max values are:
V Z (min) V Z V Z
V Z (max) V Z V Z
undetected
TROUBLESHOOT
Optical Diode
Current Regulator Diode
Schottky Diode
PIN Diode
Step-recovery Diode
Tunnel Diode
Laser Diode
Varactor Diode
Varactor is a type of p-n junction diode that
operates in reverse bias. The capacitance of the
junction is controlled by the amount of reverse bias.
Varactor diodes are also referred to as varicaps or
tuning diodes and they are commonly used in
Fig.3-1: Varactor diode symbol
communication systems.
3.3.1 Basic Operation
The capacitance of a reverse-biased varactor
junction is found as:
A
C
d
where, C = the total junction capacitance.
A = the plate area. FIG: Reverse-biased varactor
= the dielectric constant (permittivity). diode acts as a variable
d = the width of the depletion region capacitor.
(plate separation).
The ability of a varactor to act as a voltage-controlled capacitor is
demonstrated in Fig. 3-10.
1
fr (3-14)
2 LC
Anode Cathode
(b) (c)
LED characteristics:
characteristic curves are very similar to those for p-n junction diodes
higher forward voltage (VF)
lower reverse breakdown voltage (VBR).
The basic operation of LED is as illustrated in
Fig. 3-14:
When the device is forward-biased,
electrons cross the p-n junction from the n-
type material and recombine with holes in
the p-type material. These free electrons
are in the conduction band and at a higher
energy than the holes in the valence band.
When the recombination process takes
place, the recombining electrons release
energy in the form photons.
A large exposed surface area on one layer of
the semiconductive material permits the
photons to be emitted as visible light.
Fig.314:
This process is called electroluminescence. Electroluminescence in a
forward-biased LED.
Various impurities are added during the doping process to establish the
wavelength of the emitted light. The wavelength determines the color of visible
light.
LED Semiconductor
Materials
The color emitted by a given LED depends on the combination of elements used to
produce the component. Some common element combinations are identified in Table 3-1.
VBias VF
RLIMIT
IF
Application
The seven segment display is an example of LEDs use for
display of decimal digits.
VR
RR
I
Fig.3-17: Photodiode.
When its p-n junction is exposed to light, the reverse current increases with the light
intensity as shown by the graph in Fig. 3-18 expressed as irradiance (mW/cm2).
When there is no incident light, the reverse current is almost negligible and is called
the dark current.
A Schottky diode symbol is shown in Fig. 3-20(a). The Schottky diodes significant
characteristic is its fast switching speed. This is useful for high frequencies and digital
applications. It is not a typical diode in that it does not have a p-n junction. Instead, it
consists of a doped semiconductor (usually n-type) and metal bound together, as shown in
Fig. 3-20(b).
Fig.3-20: (a) Schottky diode symbol and (b) basic internal construction of a
Schottky diode.
The Laser Diode
The laser diode (light amplification by stimulated emission of radiation)
produces a monochromatic (single color) light. Laser diodes in conjunction
with photodiodes are used to retrieve data from compact discs.