MOSFET AND IGBT, DRIVE

CIRCUITS
BY
R.LAVANYA
AP/EEE
 MOSFET
Power MOSFET
Power MOSFET has much higher current
handling capability in ampere range and drain
to source blocking voltage(50-100V) than
other MOSFETs.
Below fig., represents Repetitive pattern of
the cells structure in power MOSFET
 Power MOSFET: R-V Characteristics
An important parameter of a power MOSFET is
on resistance:

Fig. 3. Typical RDS versus ID characteristics of a

MOSFET.
 Thyristor: Structure

Thyristor is a general class of a four-layer

pnpn semiconducting device.

Fig.4 (a) The basic four-layer pnpn structure.

(b) Two two-transistor equivalent circuit.
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