EEE403

Power Electronics

Dr. Tapan Kumar Chakraborty

Professor
Department of EEE
University of Asia Pacific
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 Power Electronics ?
Power
Electrical Power Generation
Transmission
Distribution
Electronics
Deals with the study of power
semiconductor switching devices and their
V-I characteristics.
Circuits using these power Electronic
devices for power conversion and output
power control for Various applications.

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 History of Power Electronics

Mercury arc rectifier in 1900.

Metal tank rectifier.
Grid controlled vacuum tube rectifier.
SCR (Silicon Controlled Rectifier)
The 1st Thyristor developed by Bell labs in
1956.
1st Commercial grade SCR developed by
General Electric Co. in 1958.

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 Applications of Power Electronics

Air conditioning Cooking

Uninterruptible power equipments.
supply(UPS) Lighting systems
Elevators Refrigerators.
Emergency lamps Freezers.
Heating systems
Vacuum cleaners
Robot
Washing machines
Welding machines
Personal
Aircraft power supplies
Computers.

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 Applications of Power Electronics

Electronic Ignition in Electric vehicles.

Automobiles Battery chargers for
Generator Excitor Electric vehicles.
DC power supply High-speed Electric
Space power supplies Trains.
Solar power supplies Linear induction
Traffic signal controls motor controls
Welding machines Vending machines
Mobile cell phone Pumps and
battery chargers. compressors

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 Applications of Power Electronics

High voltage DC transmissions (HVDC).

Gas turbine starting.
Static VAR compensation.
Energy storage systems.
Boiler feed water control in Power Station.
Flexible AC Transmission Systems (FACTS).

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 Power Semiconductor Switching Devices

Diodes
Bipolar Junction Transistor (BJT)
Metal-Oxide-Semiconductor Field-Effect
Transistor (MOSFET)
Insulated Gate Bipolar Transistor (IGBT)
Silicon Controlled Rectifier (SCR)
Gate Turn off Thyristor (GTO)
TRIAC

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 Triggering Devices

Devices used to Trigger a SCR or a TRIAC

DIAC
UJT
PUT ( Programmable Unijunction Transistor )

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 Applications and Frequency Range of Power Devices

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 Power Semiconductor Diode

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 Diode Characteristics

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 Schockley Diode Equation

Forward-biased region
Reverse-biased region
Breakdown region

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 Power Diode Types
1.General purpose diodes
2.Fast Recovery Diodes
3.Schottky Diodes
Diode Ratings
Current Ratings: Less than 1A ~ 4500A
Voltage Ratings: 50 volt ~ 6000 volt
On state resistance: Around 0.32 m
Switching Time: 5 ~ 100 s
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 Power BJT

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 Cross Section of BJTs

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 BJT Characteristics

Cutoff mode
Active mode
Saturation mode

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 BJT Switching Characteristics

Internal capacitances

Turn-on time

Turn-off time

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 BJT Ratings
Ratings up to 1200V / 400A.
Normally operated as a switch in
CE configuration.
Max. operating Frequency: 400Hz.
Switching time: 200 to 400sec.
On state resistance: 3.6m.

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 Power MOSFET

Two types of MOSFETs (I) Depletion MOSFETs (II) Enhancement MOSFETs

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 n-channel Enhancement MOSFET Characteristics

Triode Saturation
Cutoff

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 MOSFET Switching Characteristics

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 Advantages of MOSFET

Input resistance is very high

MOSFETs require low gate energy
Very fast switching speed
Low switching losses

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 Power MOSFET Ratings
Used in high speed power converters
like inverters & choppers.
Ratings up to 1000V / 100A.
Max. Frequency: 100KHz.
Switching time: 1.6sec.
On state resistance: 1.2m.

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 IGBT ( Insulated Gate Bipolar Transistor)

Cross section of IGBT

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 Advantages of IGBT

Combines the advantages of BJT & MOSFET

High input impedance like MOSFET
Voltage controlled device like MOSFET
Simple gate drive, Lower switching loss
Low on state conduction power loss like BJT
Higher current capability
Higher switching speed than a BJT

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 Applications of IGBT

ac and dc motor controls.

General purpose inverters.
Uninterruptible Power Supply (UPS).
Welding Equipments.
Numerical control, Cutting tools.
Robotics & Induction heating.

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 IGBT Ratings

V & I ratings: 2500V / 2400A.

Max. Frequency: 20KHz.
Switching time: 5sec.
On state resistance: 2.3m.

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 SCR (Silicon Controlled Rectifier) / Thyristor

Three terminals switching

device
Anode, Cathode, Gate

Lower ON state conduction loss

Higher power handling capability

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SCR Symbol

PNPN Four layers

Three PN junctions

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 Cross section of PNPN structure

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Anode current

Two transistors equivalent circuit

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 I-V Characteristics of SCR

Latching current IL
Minimum anode current
to maintain ON state
immediately after SCR has
been turned ON.

Holding current IH
Minimum anode current
to maintain ON state

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 Thyristor Turn-ON

Thermals> high temperature..> increase

hole-electron pairs

Light
High voltage
dv/dt .> high
Gate current.> applying positive gate pulse

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 Thyristor Turn-OFF (Commutation )

1. Reducing anode
current below
holding current

2. Forced- commut
ation

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 SCR Ratings
Line Commutated Thyristors available
up to 6000V, 4500A.
Max. Frequency: 60Hz.
Switching time: 100 to 400sec.
On state resistance: 0.45m.

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 TRIAC (Triode AC )

A three-electrode power device that will

conduct in either direction when triggered by
a positive or negative signal at the gate
electrode.

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 I-V Characteristics of TRIAC

Turn-ON
Applying positive
or negative pulse
between Gate and
MT1

Turn-OFF
Reducing current
to zero

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 Example of TRIAC Ratings

Used in heat / light control, ac motor

control circuit
V / I rating: 1200V / 300A.
Max. Frequency: 400Hz.
Switching time: 200 to 400sec.
On state resistance: 3.6m.

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 Circuit diagram using TRIAC

is the triggering angle or

firing angle or delay angle

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 GTO (Gate turn off thyristor )
Gate turn off thyristor (GTO) is a four layer
PNPN power semiconductor switching device.

Special type of Thyristor

The device is turned on by a positive gate

pulse

It is turned off by a negative gate pulse.

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 Advantages of GTO
There is no need for an external commutation
circuit to turn it off.
Inverter circuits built by this device are
compact and low-cost.
GTO is turned off by a negative gate pulse
Reduction in acoustic and electro-magnetic
noise
Faster turn-off
Improved efficiency
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 DIAC ( Diode AC)
The DIAC is a diode that
conducts electrical current in
either direction only after its
breakover voltage, VBO, has
been reached momentarily.

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 UJT ( Unijunction Transistor)
A unijunction transistor (UJT) is
a three-lead electronic
semiconductor device with
only one junction that acts
exclusively as an electrically
controlled switch.

Used as free-running oscillators, synchronized or

triggered oscillators, and pulse generation circuits
at low to moderate frequencies (hundreds of
kilohertz). It is widely used in the triggering circuits
for SCR, TRIAC .
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 V-I Characteristic of UJT

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 = Intrinsic
stand off
ratio

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 PUT (Programmable Unijunction Transistor

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 Application of PUT

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 Different types of Power Converters

Uncontrolled Rectifiers (AC to DC )

DC choppers (DC to DC converters).
Inverters (DC to AC converters)
Controlled Rectifier ( AC to DC )
AC voltage controllers (AC to AC
Converters with constant frequency).
Cycloconverters (AC to AC
converters at low output frequency).

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