Beruflich Dokumente
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DC Biasing Circuits
Pictures are redrawn (with some modifications) from
Introductory Electronic Devices and Circuits
By
Robert T. Paynter
1
Objectives
• State the purpose of dc biasing circuits.
• Plot the dc load line given the value of VCC and
the total collector-emitter circuit resistance.
• Describe the Q-point of an amplifier.
• Describe and analyze the operations of various
bias circuits:
– base-bias circuits
– voltage-divider bias circuits
– emitter-bias circuits
– collector-feedback bias circuits
– emitter-feedback bias circuits
2
Fig 7.1 Typical amplifier operation.
VCC
VB(ac)
IB(ac) RC
RB
Q1
VCE(ac)
IC(ac)
3
Fig 7.2 A generic dc load line.
IC VCC VCE
IC
RC
VCC
I C (sat)
RC
4
Fig 7.3 Example 7.1.
Plot the dc load line for the circuit
shown in Fig. 7.3a.
+12 V
IC
RC
2 k
8 IC(sat)
RB
6
Q1 4
VCE(off)
2
VCE
2 4 6 8 10 12
5
Fig 7.4 Example 7.2.
Plot the dc load line for the circuit shown in
Fig. 7.4. Then, find the values of VCE for IC =
1, 2, 5 mA respectively.
+10 V
IC
VCE VCC I C RC
RC
1 k
10 IC (mA) VCE (V)
RB
8 1 9
6 2 8
Q1
4 5 5
2
VCE
2 4 6 8 10
6
Fig 7.6-8 Optimum Q-point with
amplifier operation.
IC
IC(sat)
IB = 50 A IB
I C βI B
IB = 40 A
IC(sat)/2 Q-Point IB = 30 A
IB = 20 A
IB = 10 A
IB = 0 A
VCE
VCC/2 VCC
VCE VCC I C RC
7
Fig 7.9 Base bias (fixed bias).
VCC
VCC VBE
IB
RB
IC
RC
I C βI B
RB
Output
IB
VCE VCC I C RC
Input Q1
b = dc current gain = hFE
+0.7 V
IE
VBE
8
Fig 7.10 Example 7.3.
+8 V VCC 0.7V 8V 0.7V
IB
RB 360kΩ
20.28μA
RC
IC 2 k I C hFE I B 100 20.28μA
RB 2.028mA
360 k
IB VCE VCC I C RC
hFE = 100 8V 2.028mA 2kΩ
3.94V
+0.7 V
IE
The circuit is midpoint biased.
VBE
9
Fig 7.11 Example 7.4.
Construct the dc load line for the circuit shown in Fig. 7.10,
and plot the Q-point from the values obtained in Example
7.3. Determine whether the circuit is midpoint biased.
IC (mA)
VCC 8V
I C (sat ) 4mA
RC 2kΩ
4
2 Q
VCE (V)
2 4 6 8 10 10
Fig 7.12 Example 7.6. (Q-point shift.)
The transistor in Fig. 7.12 has values of hFE = 100 when T =
25 °C and hFE = 150 when T = 100 °C. Determine the Q-
point values of IC and VCE at both of these temperatures.
+8 V
IB
hFE = 100 (T = 25C)
hFE = 150 (T = 100C)
+0.7 V
IE
VBE
11
Fig 7.13 Base bias characteristics. (1)
VCC
Circuit recognition: A single resistor
(RB) between the base terminal and
VCC. No emitter resistor.
RC
IC
RB
Output
IB
Input Q1 Advantage: Circuit simplicity.
Disadvantage: Q-point shift with temp.
+0.7 V
IE Applications: Switching circuits only.
VBE
12
Fig 7.13 Base bias characteristics. (2)
VCC
Load line equations:
VCC
I C (sat )
RC RC
IC
RB VCE (off ) VCC
Output
IB
Input Q1
Q-point equations:
VCC VBE
+0.7 V
IE IB
VBE RB
I C hFE I B
VCE VCC I C RC
13
Fig 7.14 Voltage divider bias. (1)
+VCC
Assume that I2 > 10IB.
R2
VB VCC
R1 R2
IC RC
I1 R1 VE VB 0.7V
VE
IB
Output IE
RE
Input Assume that ICQ IE (or
I2 R2 hFE >> 1). Then
IE RE
VCEQ VCC ICQ RC RE
14
Fig 7.15 Example 7.7. (1)
Determine the values of ICQ and VCEQ for the circuit shown in Fig. 7.15.
+10 V R2
VB VCC
R1 R2
4.7kΩ
10V 2.07V
22.7kΩ
RC
R1
IC
3 k VE VB 0.7V
I1
18 k 2.07V 0.7V 1.37V
IB Because ICQ IE (or hFE >> 1),
hFE = 50 VE 1.37V
I CQ 1.25mA
RE 1.1kΩ
R2
I2
4.7 k
RE VCEQ VCC I CQ RC RE
1.1 k
IE 10V 1.25mA 4.1kΩ 4.87V
15
Fig 7.15 Example 7.7. (2)
Verify that I2 > 10 IB.
+10 V
VB 2.07V
I2 440.4μA
R2 4.7kΩ
IE 1.25mA
RC IB
R1
IC
3 k hFE 1 50+1
I1
18 k 24.51μA
IB I 2 10 I B
hFE = 50
R2
I2 RE
4.7 k
1.1 k
IE
16
Which value of hFE do I use?
Transistor specification sheet may list any
combination of the following hFE: max. hFE,
min. hFE, or typ. hFE. Use typical value if
there is one. Otherwise, use
17
Example 7.9
A voltage-divider bias circuit has the following values:
R1 = 1.5 k, R2 = 680 , RC = 260 , RE = 240 and
VCC = 10 V. Assuming the transistor is a 2N3904,
determine the value of IB for the circuit.
R2 680Ω
VB VCC 10V 3.12V
R1 R2 2180Ω
VE VB 0.7V 3.12V 0.7V 2.42V
VE 2.42V
I CQ IE 10mA
RE 240Ω
hFE ( ave ) hFE (min) hFE (max) 100 300 173
IE 10mA
IB 57.5μA
hFE (ave) 1 174
18
Stability of Voltage Divider
Bias Circuit
The Q-point of voltage divider bias circuit is less
dependent on hFE than that of the base bias (fixed
bias).
IE 10mA
At hFE 100, I B 100μA and I CQ I E I B 9.90mA
hFE 1 101
IE 10mA
At hFE 300, I B 33μA and I CQ I E I B 9.97mA
hFE 1 301
VCC 10V
25 I C (sat ) 20mA
RC RE 260Ω+240Ω
20
Circuit values are from
15
Example 7.9.
10
VCE (off ) VCC 10V
5
VCE (V)
2 4 6 8 10 12 20
Fig 7.19-20 Base input resistance. (1)
I2 R2 I2 R2 IB RIN(base)
RE
IE
RIN(base)
21
Fig 7.19-20 Base input resistance. (2)
22
Fig 7.21 Example 7.11.
REQ R2 // hFE RE
VCC=20V
10kΩ// 50 1.1kΩ 8.46kΩ
REQ
VB VCC
RC R1 REQ
IC
R1 6.2k 8.46kΩ
20V
I1
68k 2.21V
68kΩ 8.46kΩ
VE VB 0.7V
hFE = 50
I CQ I E
RE RE
IE 2.21V 0.7V
I2
R2
RE 1.37mA
10k 1.1kΩ
1.1k
VCEQ VCC I CQ RC RE
20V 1.37mA 7.3kΩ 9.99V
23
Fig 7.24 Voltage-divider bias
characteristics. (1)
+VCC
Circuit recognition: The
voltage divider in the base
circuit.
24
Fig 7.24 Voltage-divider bias
characteristics. (2)
+VCC VCC
Load line I
equations: C (sat ) RC RE
VCE (off ) VCC
IC RC
I1 R1 Q-point equations (assume
that hFERE > 10R2):
IB R2
Output VB VCC
R1 R2
Input VE VB 0.7V
I2 R2 VE
IE RE I CQ I E
RE
VCEQ VCC I CQ RC RE
25
Other Transistor Biasing
Circuits
• Emitter-bias circuits
• Feedback-bias circuits
– Collector-feedback bias
– Emitter-feedback bias
26
Fig 7.25-6 Emitter bias.
+VCC
Assume that the transistor
operation is in active region.
VEE 0.7V
IC RC IB
RB hFE 1 RE
IB IC hFE I B
Output
Q1 I E hFE 1 I B
Input
RB
VCE VCC IC RC I E RE VEE
RE
IE
Assume that hFE >> 1.
VCE VCC IC RC RE VEE
-VEE 27
Fig 7.27 Example 7.12.
+12 V
Determine the 12V 0.7V
IB
values of ICQ and RB (hFE 1) RE
VCEQ for the 11.3V
RC 37.47μA
amplifier shown in IC
Fig.7.27.
750 100Ω+2011.5kΩ
I CQ hFE I B 200 37.47μA
IB 7.49mA
Q1 Output
hFE = 200 VCEQ VCC IC RC RE (VEE )
Input
RB
24V 7.49mA 750Ω 1.5kΩ
100 RE 7.14V
IE 1.5k
-12 V
28
Load Line for
Emitter-Bias Circuit
IC
VCC (VEE ) VCC VEE
I C (sat )
RC RE RC RE
IC(sat)
VCE (off ) VCC VEE VCC VEE
VCE(off)
VCE
29
Fig 7.28 Emitter-bias
characteristics.
+V
(1)
CC
Circuit recognition: A split (dual-
polairty) power supply and the base
resistor is connected to ground.
IC RC
Advantage: The circuit Q-point
values are stable against changes in
hFE.
IB
Output Disadvantage: Requires the use of
Q1
dual-polarity power supply.
Input
Applications: Used primarily to bias
RB linear amplifiers.
RE
IE
-VEE 30
Fig 7.28 Emitter-bias
characteristics.
+V
(2)
CC
Load line equations:
VCC VEE
I C (sat )
IC RC RC RE
VCE (off ) VCC VEE
IB
Output Q-point equations:
Q1
VBE VEE
Input I CQ hFE
RB
RB hFE 1 RE
IE
RE
VCEQ VCC I CQ RC RE VEE
-VEE 31
Fig 7.29 Collector-feedback
bias.
+VCC VCC IC I B RC I B RB VBE
VCC VBE
IB
(hFE 1) RC RB
RC
I CQ hFE I B
RB
VCEQ VCC hFE 1 I B RC
IC
IB
VCC I CQ RC
IE
32
Fig 7.30 Example 7.14.
+10 V Determine the values of ICQ and VCEQ for the
amplifier shown in Fig. 7.30.
VCC VBE
IB
RC RB hFE 1 RC
1.5 k
10V 0.7V
RB 28.05μA
180kΩ 1011.5kΩ
180 k I CQ hFE I B 100 28.05μA
IC
IB
IB decreases
IE
IC does not increase that much.
Good Stability. Less dependent
on hFE and temperature.
34
Collector-Feedback
Characteristics (1)
+VCC
Circuit recognition: The base
resistor is connected between
the base and the collector
RC terminals of the transistor.
RB Advantage: A simple circuit
with relatively stable Q-point.
IC Disadvantage: Relatively poor
IB
ac characteristics.
Applications: Used primarily to
IE
bias linear amplifiers.
35
Collector-Feedback
Characteristics (2)
+VCC Q-point relationships:
VCC VBE
IB
(hFE 1) RC RB
RC
I CQ hFE I B
RB
VCEQ VCC I CQ RC
IC
IB
IE
36
Fig 7.31 Emitter-feedback bias.
+VCC VCC VBE
IB
RB hFE 1 RE
I CQ hFE I B
RB RC
IC
IB
I E hFE 1 I B
VCEQ VCC I C RC I E RE
VCC I CQ RC RE
IE RE
37
Fig 7.32 Example 7.15.
+VCC
VCC VBE 16V 0.7V
IB
RB hFE 1 RE 680kΩ 511.6kΩ
20.09μA
RB RC I CQ hFE I B 50 20.09μA 1mA
680k 6.2k
VCEQ VCC I CQ RC RE
16V 1mA 7.8kΩ 8.2V
hFE = 50
RE
1.6k
38
Circuit Stability of
Emitter-Feedback Bias
+VCC hFE increases
RB RC
IC VE increases
IB
IB decreases
IE RE
IC does not increase that much.
IC is less dependent on hFE and
temperature.
39
Emitter-Feedback
Characteristics (1)
+VCC
Circuit recognition: Similar to
voltage divider bias with R2
missing (or base bias with RE
added).
RB RC
IC
Advantage: A simple circuit
with relatively stable Q-point.
IB
Disadvantage: Requires more
components than collector-
feedback bias.
IE RE Applications: Used primarily to
bias linear amplifiers.
40
Emitter-Feedback
Characteristics (2)
+VCC
Q-point relationships:
VCC VBE
IB
RB (hFE 1) RE
RB
IC
RC
I CQ hFE I B
IB
VCEQ VCC ICQ RC RE
IE RE
41
Summary
• DC Biasing and the dc load line
• Base bias circuits
• Voltage-divider bias circuits
• Emitter-bias circuits
• Feedback-bias circuits
– Collector-feedback bias circuits
– Emitter-feedback bias circuits
42