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BIPOLAR JUNCTION
TRANSISTORS (BJTs)
INTRODUCTION
What is transistor?
A three-terminal device whose output current,
voltage and/or power are controlled by its input.
I E I B IC
IB << IE or IC
The capital letter – dc value
Transistor is a current-controlled device - the value of collector and
emitter currents are determined by the value of base current.
An increase or decrease in value of IB causes similar change in values
of IC and IE.
Current gain (β) factor
I I
C
by which current increases
DC B from base of transistor to
its collector.
1. BJT STRUCTURE
Transistor Voltages:
VCC – collector supply voltage. This is a power supply voltage
applied directly to collector of transistor.
VBB – base supply voltage. this is dc voltage used to bias base
of transistor.
VEE – emitter supply voltage. dc biasing voltage and in many
cases, VEE is simply a ground connection.
1. BJT STRUCTURE
Transistor Voltages:
VC – dc voltage measured from collector terminal of
component to ground
VB – dc voltage measured from base terminal to ground.
VE – dc voltage measured from emitter terminal to ground.
1. BJT STRUCTURE
Transistor Voltages:
VCE – dc voltage measured from collector to emitter terminal
of transistor.
VBE – dc voltage measured from base to emitter terminal of
transistor.
VCB – dc voltage measured from collector to base terminal of
transistor.
2. BJT OPERATION
2. BJT OPERATION
To operate the transistor properly, the two pn
junction must be correctly biased with external dc
voltages.
The figure shown the proper bias arrangement for
both npn and pnp transistor for active operation as
an amplifier.
2. BJT OPERATION
Transistor is made of 3 separate semiconductor
materials that joined together to form two pn
junction.
Point at which emitter and base are joined forms a
single pn junction base-emitter junction
Collector-base junction point where base and
collector meet.
2. BJT OPERATION
Cutoff region
Both transistor
junctions are reverse
biased.
With large depletion
region between C-B
and E-B, very small
amount of reverse
current, ICEO passes
from emitter to
collector and can be
neglected.
So, VCE = VCC
2. BJT OPERATION
Saturation region
Both transistor junctions are
forward-biased.
IC reaches its maximum value
as determined by VCC and total
resistance in C-E circuit.
IC is independently from
relationship of β and IB.
VBE is approximately 0.7V and
VCE < VBE.
VCC
IC
RC RE
2. BJT OPERATION
Active region
BE junction is forward biased
and the BC junction is reverse
biased.
All terminal currents have
some measurable value.
The magnitude of IC depends
on the values of β and IB.
VCE is approximately near to
0.7V and VCE falls in ranges
VBE<VCE<VCC.
3. BJT CHARACTERISTICS &
PARAMETERS
3. BJT CHARACTERISTICS & PARAMETERS
IC
DC
IB
The ratio of the dc collector current (IC) to the dc emitter current (IE) is
the dc alpha ( DC ) – less used parameter in transistor circuits
Range value-> 0.95< DC <0.99 or greater , but << 1 (Ic< IE )
IC
DC
IE
3. BJT CHARACTERISTICS & PARAMETERS
Current and Voltage Analysis:
The current and voltage can be identified as follow:
Current: Voltage:
dc base current, IB dc voltage at base with respect to emitter, VBE
dc emitter current, I E dc voltage at collector with respect to base, VCB
dc collector current, I C dc voltage at collector with respect to emitter, VCE
forward-biased the
base-emitter junction reverse-biased the
base-collector junction
variable voltage
3. BJT CHARACTERISTICS & PARAMETERS
Collector characteristic curve:
3. BJT CHARACTERISTICS & PARAMETERS
Collector Characteristic Curve:
Assume that VBB is set to produce a certain value of IB and VCC is zero.
At this condition, BE junction and BC junction are forward biased
because the base is approximately 0.7V while the emitter and the
collector are zero.
IB is through the BE junction because of the low impedance path to
ground, therefore IC is zero.
When both junctions are forward biased – transistor operate in
saturation region.
As VCC increase, VCE is increase gradually, IC increase – indicated by
point A to B.
IC increase as VCC is increased because VCE remains less than 0.7V due
to the forward biased BC junction.
When VCE exceeds 0.7V, the BC becomes reverse biased and the
transistor goes into the active or linear region of its operation.
3. BJT CHARACTERISTICS & PARAMETERS
Collector Characteristic Curve:
Once BC junction is RB, IC levels off and remains constant for given
value of IB and VCE continues to increase.
Actually IC increases slightly as VCE increase due to widening of the BC
depletion region
This result in fewer holes for recombination in the base region which
effectively caused a slight increase in I C DC I B indicated in point
B and C.
When VCE reached a sufficiently high voltage, the reverse biased BC
junction goes into breakdown.
The collector current increase rapidly – as indicated at the right point C
The transistor cannot operate in the breakdown region.
When IB=0, the transistor is in the cutoff region although there is a very
small collector leakage current as indicated – exaggerated on the graph
for purpose of illustration.
3. BJT CHARACTERISTICS & PARAMETERS
DC Load Line:
Cutoff and saturation can be illustrated in relation to
the collector characteristic curves by the use of a load line.
DC load line drawn on the connecting cutoff and saturation point.
The bottom of load line is ideal
cutoff where IC=0 & VCE=VCC.
The top of load line is saturation
where IC=IC(sat) & VCE =VCE(sat)
In between cutoff and saturation
is the active region of transistor’s
operation.
Example 2
Determine whether or not the transistor in figure
below is in saturation. Assume VCE(sat) = 0.2V
Solution Example 2
First, determine IC(sat),
VCC VCE ( sat ) 10 0.2
I C ( sat ) 9.8mA
RC 1.0k
Vc IeRC RC
AV AV
Vb Ier ' e r' e
5. BJT AS A SWITCH
5. BJT AS A SWITCH
A transistor when used as a switch is simply being biased so
that it is in:
1. cutoff (switched off)
2. saturation (switched on)
5. BJT AS A SWITCH
Conditions in Cutoff
Conditions in Saturation