Chapter 7:

BJT Transistor Modeling

Topic objectives

• At the end of the course you will be able to

– Understand about the small signal analysis of circuit
network using re model and hybrid equivalent model
– Understand the relationship between those two
available model for small signal analysis

2
 INTRODUCTION:TRANSISTOR MODELING

• To begin analyze of small-signal AC response of BJT

amplifier the knowledge of modeling the transistor is
important.
• The input signal will determine whether it’s a small
signal (AC) or large signal (DC) analysis.
• The goal when modeling small-signal behavior is to
make of a transistor that work for small-signal enough to
“keep things linear” (i.e.: not distort too much) [3]
• There are two models commonly used in the small signal
analysis:
a) re model
b) hybrid equivalent model 3
How does the amplification be
done?

• Conservation; output power

of a system cannot be large
than its input and the
efficiency cannot be greater
than 1
• The input dc plays the
important role for the
amplification to contribute its
level to the ac domain where
the conversion will become
as η=Po(ac)/Pi(dc)
• Simply speaking…
4
Disadvantages

• Re model
– Fails to account the output impedance level of device
and feedback effect from output to input
• Hybrid equivalent model
– Limited to specified operating condition in order to
obtain accurate result

5
 VCC

DC supply  • O/p coupling

“0” potential R1 RC capacitor  s/c
• Large values
•I/p coupling
C1
C2 +
• Block DC and
capacitor  s/c RS
pass AC signal
+ Vo
• Large values Vi R2 RE C3
• Block DC and VS -
-
pass AC signal • Bypass
capacitor  s/c
Voltage-divider configuration
under AC analysis
•Large values

R1 RC

Redraw the voltage-divider

+ configuration after removing dc
RS + Vo supply and insert s/c for the
Vi R2
capacitors
VS -
-
6
 Modeling of
BJT begin
HERE!

Ii Transistor small- Io
B signal ac C
R1 RC + equivalent cct
Zi +
E
RS Rc
+ Vi R1 R2
Zo Vo
RS + Vo
Vi R2
VS
- - -
VS
-

Redrawn for small-signal AC analysis

7
 AC bias analysis :

1) Kill all DC sources

2) Coupling and Bypass capacitors are short cct.

The effect of there capacitors is to set a lower cut-off
frequency for the cct.

3) Inspect the cct (replace BJTs with its small signal

model:re or hybrid).

4) Solve for voltage and current transfer function,

i/o and o/p impedances.
8
 IMPORTANT PARAMETERS

• Input impedance, Zi
• Output impedance, Zo
• Voltage gain, Av
• Current gain, Ai

Input Impedance, Zi(few ohms  M)

The input impedance of an amplifier is the value as a

load when connecting a single source to the I/p of
terminal of the amplifier.

9
Two port system
-determining input impedance Zi

Rsense
Vi
+
Ii
+ Zi 
VS Zi Vi Two-port Ii
- system
- Vs  Vi
Ii 
Rsense
Determining Zi

• The input impedance of transistor can be

approximately determined using dc biasing because it
doesn’t simply change when the magnitude of applied
ac signal is change. 10
 Demonstrating the impact of Zi
Rsource

+ 600 Ω +
Zi
VS=10mV 1.2 k Ω
Vi Two-port
- system
-

Ideal source, Rsource  0Ω

Full 10mV applied to the system

With source impedance, Rsource  600 Ω

ZiVs 1.2k (10 m)
Vi    6.6mV
Zi  Rsource 1.2k  600 11
Example 6.1: For the system of Fig. Below, determine
the level of input impedance
1k Ω

+ Rsense +
Zi
VS=2mV Two-port
Vi=1.2mV
- system
-

Solution:
Vs  Vi 2m  1.2m 0.8m
Ii     0.8A
Rsense 1k 1k
Vi 1.2m
Zi    1.5k
Ii 0.8
12
 Output Impedance, Zo (few ohms  2M)
The output impedance of an amplifier is determined at
the output terminals looking back into the system with
the applied signal set to zero.

Rsense
Rsource
V  Vo
+
Io +
Io 
Vo V
Rsense
Vs=0V Two-port Zo
system -
-
Vo
Zo 
Determining Zo
Io
Iamplifier
IL

IRo For Ro  RL
Zo  RL  Zo become open cct
Zo=Ro
RL
IL  IRo
13
Example 6.2: For the system of Fig. below, determine the
level of output impedance
Rsense

Two-port + 20 k Ω
system +
Zo
V=1 V
Vs=0V Vo=680mV -
-

Solution
:
V  Vo 1  680 m 320 m
Io     16A
Rsense 20 k 20 k
Vo 680 m
Zo    42.5k
Io 16 14
Example 6.3: For the system of Fig. below, determine Zo
if V=600mV, Rsense=10k and Io=10A
Rsense
Rsource
+
Io +
Vs=0V Two-port Vo V
Zo
system -
-

Solution:
V  Vo
Io 
Rsense Vo 500 m
Zo    50 k
Vo  V  IoRsense Io 10
 600 m  10  10 k
 500 mV
15
Example 6.4: Using the Zo obtained in example 6.3,
determine IL for the configuration of Fig below if
RL=2.2 k and Iamplifier=6 mA.

Solution :
Iamplifier
IL Current divider rule :
IRo Zo(Iamplifier )
IL 
Zo=Ro
RL
Zo  RL
50 k (6m)

50 k  2.2k
 5.747 mA

16
 Voltage Gain, AV

• DC biasing operate the transistor as an amplifier.

Amplifier is a system that having the gain behavior.
• The amplifier can amplify current, voltage and power.
• It’s the ratio of circuit’s output to circuit’s input.
• The small-signal AC voltage gain can be determined
by:

Vo
Av 
Vi

17
By referring the network below the analysis are:

no load
Rsource
Vo
+ + + AvNL  RL Ω (open cct)
VS Zi
AvNL Vo
Vi
Vi
-
- -

with source resistance:

Determining the no load voltage gain
Vo Zi
Avs   AvNL
Vs Zi  Rs

18
 Example 6.5: For the BJT amplifier of fig. below,
determine: a)Vi b) Ii c) Zi d) Avs
Rs Solution :
+ Vo
+ 1.2 kΩ
Zi
+
BJT amplifier a) AvNL 
VS=40mV AvNL=320 Vo=7.68V
Vi
Vi Vo 7.68
-
- - Vi    24 mV
AvNL 320

Vs - Vi 40 m  24 m
b) Ii    13 .33A
Rs 1.2k
Rs  Rsource

Vi 24 m
c) Zi    1.8k
Ii 13 .33

Zi 1.8k
d) Avs  AvNL  (320 )  192
Zi  Rs 1.8k  1.2k
19
 Current Gain, Ai

• This characteristic can be determined by:

Io
Ii

Vo
+
+
BJT
Io  
Zi
amplifier RL Vo
Vi

-
-
RL
Determining the loaded current gain

Io Vo / RL VoZi Zi
Ai    Ai  Av
Ii Vi / Zi ViRL RL
20
 re TRANSISTOR MODEL

• employs a diode and controlled current source to

duplicate the behavior of a transistor.
• BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

Common-base BJT transistor

re model
re equivalent cct.

21
 Ic Ie
E
C
26mV
re   IE is t heDC level of
IE(dc)
B B

Common-base BJT transistor - pnp

emit t er current

Therefore, the input impedance, Zi = re

Ie Ic that less than 50Ω.

e c
For the output impedance, it will be as
Ic  α Ie
follows;
b b Ie=0A Ic
re model for the pnp common-base e c
configuration

Vs=0V re Ic  0A
b b
Ie Ic
e c
isolation Determining Zo for common-base
re Ic  α Ie part,
b b Zi=re Zo   22
common-base re equivalent cct
The common-base
characteristics

23
 Ie BJT common-base
e transistor amplifier c Ic  α Ie Io
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Av=Vo/Vi for the common-base configuration

Vo  IoRL   Ic RL  IeRL

Vi  IeZi  Iere
Voltage gain,
Vo IeRL
Av   RL RL
Vi Iere Av  
re re
24
 Ie BJT common-base
e transistor amplifier c Ic  α Ie Io
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Ai=Io/Ii for the common-base configuration

Io Ic Ie
Ai   
Ii Ie Ie
Current gain,
Ai    1
25
Example 6.6: For a common-base configuration in figure
below with IE=4mA, =0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Zi b) Calculate Av if RL=0.56k
c) Find Zo and Ai

Ie Ic
e c

re Ic  α Ie
b b

common-base re equivalent cct

26
Solution:
26m 26 m
a) Zi  re    6.5
IE 4m

RL 0.98 (0.56 k )

b) Av    84 .43
re 6.5

c) Zo  Ω
Io
Ai      0.98
Ii

27
Ii  Ie Ic
e c

re Ic  α Ie
b b

common-base re equivalent cct

28
Example 6.7: For a common-base configuration in previous
example with Ie=0.5mA, =0.98 and AC signal of 10mV is
applied, determine:
a) Zi b) Vo if RL=1.2k c) Av d)Ai e) Ib

Solution :
d) Ai    0.98
Vi 10 m
a) Zi    20 e) Ib  Ie - Ic
Ie 0.5m
b) Vo  IcRL  IeRL  Ie - Ie
 0.98(0.5m)(1.2k)  0.5m(1  )
 0.5m(1  0.98 )
 588mV
 10 A
Vo 588 m
c) Av    58 .8
Vi 10 m

29
 Common-Emitter Configuration

Common-emitter BJT transistor

re model
re equivalent cct.
Still remain controlled-current source (conducted
between collector and base terminal)
Diode conducted between base and emitter terminal

Input Output
Base & Emitter terminal Collector & Emitter terminal

30
 c
C
Ic
Ic
Ic   Ib
Ib
b
Ib
B

E E
e e
common-emitter BJT transistor
re model npn common-emitter configuration
Vi
Zi  (1)
Ii
c
Vi  Vbe  I ere  I bre and
Ic
s ubt it ut eint o( 1)gives Ic   Ib
Ii=Ib
b
Vbe Ibre
Zi   + + Ie
Ib Ib Vi Vbe re

Zi  re -
e - e

Determining Zi using re equivalent model

Z i ranges bet w eenhundred t o6 ~ 7k
31
The output graph

32
 Output impedance Zo
Ii=Ib
b c

 Ib
re ro

e e
re model for the C-E transistor configuration

Ii=Ib = 0A
b c

Vs=0V Ib  0A
re ro Zo
e e

Zo  ro
if ro is ignored thus the
Zo  Ω (open cct, high impedance)
33
 Ii=Ib BJT common-emitter Io  Ic   Ib
transistor amplifier Io
e c
+
+
Vi re Zo   RL
Zi  re Vo
-
- b b

Determining voltage and current gain for the

common-emitter amplifier

Vo  IoRL  Ic RL  IbRL Current gain,

Vi  IiZi  Ibre Io Ic Ib
Ai   
Ii Ib Ib
Voltage gain,
Vo  IbRL Ai  
Av  
Vi Ib re

RL
Av  
re 34
Example 6.8: Given =120 and IE(dc)=3.2mA for a common-
emitter configuration with ro=  , determine:

a) Zi b)Av if a load of 2 k is applied c) Ai with the 2 k load

Solution :
26m 26 m
a) re    8.125 
IE 3.2m
Zi  re  120 (8.125 )  975 

RL 2k
b)Av      246 .15
re 8.125

Io
c) Ai     120
Ii

35
Example 6.9: Using the npn common-emitter configuration,
determine the following if =80, IE(dc)=2 mA and ro=40 k

a) Zi b) Ai if RL =1.2k  c) Av if RL=1.2k 
Ii=Ib
b c Solution :
Io
26m 26 m
 Ib a) re    13
re ro RL IE 2m
Zi  re  80 (13)  1.04 k
e
re model for the C-E transistor configuration

36
Solution (cont)
Io IL
b)Ai  
Ii Ib
ro(Ib)
IL 
ro  RL
ro(Ib)
Ai  ro  RL 
ro 40 k
  (80 )
Ib ro  RL 40 k  1.2k
 77 .67

RL ro 1.2k 40 k
c)Av      89 .6
re 13

37
Hybrid Equivalent Model

• re model is sensitive to the dc level of operation

that result input resistance vary with the dc
operating point
• Hybrid model parameter are defined at an
operating point that may or may not reflect the
actual operating point of the amplifier

38
 Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.

39
Determination of parameter

Vi  h11Ii  h12 Vo
Vi
h11 
Ii Vo  0V

Vi
h12 
Vo Vo  0V

IO  h21Ii  h22 Vo
Solving Vo  0V ,
Ii
h21 
Io Vo  0V

Io
h22 
Vo Io  0A
40
H22 is a conductance!
 General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
41
Common emitter hybrid
equivalent circuit

42
Common base hybrid equivalent
circuit

43
 Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified

44
 Common-Emitter re vs. h-Parameter Model

hie = re
hfe = 
hoe = 1/ro
45
Common-Emitter h-Parameters

hie  re [Formula 7.28]

h fe   ac [Formula 7.29]

46
 Common-Base re vs. h-Parameter Model

hib = re
hfb = -
47
Common-Base h-Parameters

hib  re [Formula 7.30]

h fb    1 [Formula 7.31]

48