Beruflich Dokumente
Kultur Dokumente
Objectives
Explain the operation and characteristics of junction
field effect transistors (JFET).
Understand JFET parameters
Discuss and analyze how JFETs are biased
Explain the operation and characteristics of
metal oxide semiconductor field effect transistors
(MOSFET)
Discuss and analyze how MOSFET are biased
Troubleshoot FET circuits.
Introduction
Let’s first take a look at the effects with a VGS of 0V. This is
produced by shorting the gate to source junction.
JFET Drain Curve
• Refer to JFET drain curve
from point A to B, ID
increases proportionally
with increases of VDD (VDS
increases as VDD increases).
• In this area, the channel
resistance is essentially
constant because the
depletion region is not large
enough to have significant
effect. [V=IR]
• This is called the ohmic
region (point A to B)
because VDS and ID are
related by Ohm’s Law.
• At point B, the curve levels off and
ID becomes constant.
Example 1:
Calculate RIN if IGSS=-2nA and VGS=-20V
Solution:
RIN=|VGS/IGSS|=|-20/-2n|=10G
JFET Biasing Circuit
=-IDRS
2 2
V V / 3 .4
I D I DSS 1 GS I DSS 1 0.5I DSS
GS ( off )
V V
GS ( off ) GS ( off )
JFET Midpoint Biasing-self bias-formula
method
The value of RS needed to establish VGS can be determined
by the relationship below.
RS = | VGS/ID |
LDMOSFET VMOSFET
POWER MOSFET
• Dual gate MOSFETs have two gates which
helps control unwanted capacitive effects at
high frequencies.
MOSFET Characteristics and
Parameters
The D-MOSFET operate in either +ve or –ve gate voltages. The point
on the curves where VGS=0 corresponds to IDSS. The point where
ID=0 corresponds to VGS(off). As with JFET, VGS(off)=-VP.
The equation to find drain current also the same as JFET:
ID = IDSS(1 - VGS/VGS(off) )2
Solution:
a) The device has a –ve VGS(off), this is an n-channel
MOSFET.
b) ID=IDSS(1-VGS/VGS(off))2=(10mA)(1- (-3/-8))2 =3.91mA
c) ID=(10mA)(1- (+3/-8))2=18.9mA
E-MOSFET Characteristics and
Parameters
The E-MOSFET for all practical
purposes does not conduct
until VGS reaches the threshold
voltage (VGS(th)). ID when
conducting can be determined
by the formulas below. The
constant K must first be
determined from data sheet
by taking ID(on) at any given
value of VGS on a particular
MOSFET.