THE HONG KONG POLYTECHNIC UNIVERSITY

Department of Electrical Engineering

EE2003C
Electronics
Lecture 9 – MOSFET Amplifier

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 Preview
• Basic characteristics of NMOSFET amplifier
• The complementary device of the n-channel
enhancement-mode MOSFET is the PMOSFET
(p-channel enhancement-mode MOSFET)
• CMOS device
• Analysis of linear amplifiers

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 The MOSFET amplifier
• A linear amplifier magnifies an input signal and
produces an output signal whose magnitude is larger
and directly proportional to the input signal
• Small signal means that we can linearize the ac
equivalent circuit
• Electronic circuits that process analog signals are
called analog circuits

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 NMOS common-source circuit with
time varying signal source

• A common-source circuit
with time-varying signal
source in series with gate dc
source
• Referring to Figure 4.1, vi
=vgs where vgs is the time
varying component of the
gate-to-source voltage
• For a linear amplifier, the
transistor must be biased in
the saturation region

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Summary of notation

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 Common-source transistor
characteristics with dc load line
• Attached Figure shows sinusoidal variations in the gate-to-
source voltage, drain current, and drain-to-source voltage, as
a result of the sinusoidal source vi
• The dc load line and Q-point are functions of vGS, VDD, RD, and
the transistor parameters

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P-Channel Enhancement-Mode
MOSFET

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 P-channel enhancement-mode
MOSFET (PMOSFET)
• The ideal current-voltage characteristics of the
PMOSFET are essentially the same as those of
the NMOSFET with the difference in the
convention stated as follows:
• The drain current is out of the drain and vDS is
replaced by vSD
• The saturation point is given by vSD(sat) = vSG+VTP

• The current is given by:

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Circuit symbol for PMOSFET

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Complementary MOSFETs (CMOS)
• CMOS technology uses both n-channel and p-
channel devices in the same circuit
• CMOS circuits, in general, are more
complicated to fabricate than circuits using
entirely NMOS or PMOS devices
• CMOS circuits have great advantages over just
NMOS or PMOS circuits

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Cross section of CMOS device

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Small-signal parameters

Figure 4.1

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Small-signal parameters (Cont’d 1)

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Small-signal parameters (Cont’d 2)

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Small-signal parameters (Cont’d 3)

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Small-signal parameters (Cont’d 4)

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Drain current versus gate-to-source
voltage characteristics

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Drain current versus gate-to-source
voltage characteristics

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 Drain current versus gate-to-source
voltage characteristics

• Which can written

• As shown in equation (4.8a), the
transconductance is directly
proportional to the conduction
parameter Kn, which in turn is a
function of the width-to-length ratio.
Therefore, increasing the width of
the transistor increases the
transconductance, or pain, of the
transistor

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Example: calculation of
transconductance

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Channel-length modulation
parameter λ

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Finite output resistance

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Simplified small-signal equivalent
circuit

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Small-signal equivalent circuit

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 Example: transistor equivalent circuit
• Referring to attached circuit, VDD=10V and RD=10kΩ .
The transistor parameters are: VTh =2V, kn=0.5mA/V2,
and λ=0.
• A) Determine DGSQ such that IDQ=0.4mA. Calculate
VDSQ
• B) Calculate gm and ro, and determine the small signal
voltage gain
• C) If vi =0.4sin ωt, find vds.
Does the transistor remain in the
saturation region?

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Exercise 9.1

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Exercise 9.2

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Source follower Circuit

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Small-signal equivalent circuit

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 Tutorial questions
• TQ4.1
• For an n-channel MOSFET biased in the
saturation region, the parameters are
kn=0.5mA/V2, VTh=0.8V, and λ=0.01V-1, and
IDQ=0.75mA. Determine gm and r0.
• (Ans. gm=0.22mA/V, r0=133 kΩ)

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• TQ4.2
• The parameters of an n-channel MOSFET are:
VTh =1V, ½ (µnCox)=18 µA/V2, and λ=0.015V-1.
The transistor is to be biased in the saturation
region with IDQ=2mA. Design the width-to-
length ratio such that the transconductance is
gm=3.4mA/V. Calculate r0 for this condition.
• (Ans. W/L =80.6, r0=33.3kΩ)

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