Sie sind auf Seite 1von 34

Transistor Modeling

ENGI 242
ELEC 222
January 2004 ENGI 242/ELEC 222 2
Hybrid Equivalent Circuit for BJT

V1 h11 h12 I1
=
I2 h21 h22 V2

January 2004 ENGI 242/ELEC 222 3


h-parameter Model for Common Emitter

Parameters from the spec sheet (x = lead based on circuit configuration):


h11 = hix
h12 = hrx
h21 = hfx
h22 = hox
hrx and hfx are dimensionless ratios
hix is an impedance <>
hox is an admittance <S>
January 2004 ENGI 242/ELEC 222 4
Short Circuit Input Impedance

January 2004 ENGI 242/ELEC 222 5


Open Circuit Reverse Transfer Ratio

January 2004 ENGI 242/ELEC 222 6


Short Circuit Forward Transfer Ratio

January 2004 ENGI 242/ELEC 222 7


Open Circuit Output Admittance

January 2004 ENGI 242/ELEC 222 8


Transistor Modeling
Hybrid Model Pi

ENGI 242
ELEC 222
HYBRID MODEL PI

January 2004 ENGI 242/ELEC 222 10


HYBRID MODEL PI PARAMETERS
• Parasitic Resistances
• rb = rb’b = ohmic resistance – voltage drop in base region
caused by transverse flow of majority carriers, 50 ≤ rb ≤
500
• rc = rce = collector emitter resistance – change in Ic due to
change in Vc, 20 ≤ rc ≤ 500
• rex = emitter lead resistance
– important if IC very large, 1 ≤ rex ≤ 3

January 2004 ENGI 242/ELEC 222 11


HYBRID MODEL PI PARAMETERS
• Parasitic Capacitances
• Cje0 = Base-emitter junction (depletion layer) capacitance,
0.1pF ≤ Cje0 ≤ 1pF
• C0 = Base-collector junction capacitance, 0.2pF ≤ C0 ≤
1pF
• Ccs0 = Collector-substrate capacitance, 1pF ≤ Ccs0 ≤ 3pF
• Cje = 2Cje0 (typical)
• 0 =.55V (typical)
• F = Forward transit time of minority carriers, average of
lifetime of holes and electrons, 0ps ≤ F ≤ 530ps

January 2004 ENGI 242/ELEC 222 12


HYBRID MODEL PI PARAMETERS
• r = rb’e = dynamic emitter resistance – magnitude varies to
give correct low frequency value of Vb’e for Ib
• r = rb’c = collector base resistance – accounts for change in
recombination component of Ib due to change in Vc which
causes a change in base storage
• c = Cb’e = dynamic emitter capacitance – due to Vb’e
stored charge
• c = Cb’c = collector base transistion capacitance (CTC)
plus Diffusion capacitance (Cd) due to base width
modulation
• gmV = gmVb’e = Ic – equivalent current generator

January 2004 ENGI 242/ELEC 222 13


Hybrid Pi Relationships

IC
gm =
VT
kT
VT = = 26mV @ 300K
q
IC
gm =
26mV
(26mV) () 26mV
r = =
IC IB
 = gm r 
β vπ
ic = = gm vπ

January 2004 ENGI 242/ELEC 222 14
Hybrid Pi Relationships

January 2004 ENGI 242/ELEC 222 15


HYBRID MODEL PI MID BAND

January 2004 ENGI 242/ELEC 222 16


HYBRID MODEL PI HIGH FREQ.

January 2004 ENGI 242/ELEC 222 17


Common Emitter Amplifier

January 2004 ENGI 242/ELEC 222 18


Common Emitter Amplifier – DC Bias Model

January 2004 ENGI 242/ELEC 222 19


Common Emitter Amplifier - Complete Hybrid PI

January 2004 ENGI 242/ELEC 222 20


Mid Band Hybrid PI Common Emitter

January 2004 ENGI 242/ELEC 222 21


Equivalent Circuit to find ZO

January 2004 ENGI 242/ELEC 222 22


High Frequency Hybrid PI CE Amp

January 2004 ENGI 242/ELEC 222 23


Common Emitter Amplifier

January 2004 ENGI 242/ELEC 222 24


CE Amplifer Example output

January 2004 ENGI 242/ELEC 222 25


Common Emitter Amplifier

January 2004 ENGI 242/ELEC 222 26


CE Amplifer Example output

January 2004 ENGI 242/ELEC 222 27


Emitter Follower

January 2004 ENGI 242/ELEC 222 28


Emitter Follower

January 2004 ENGI 242/ELEC 222 29


Emitter Follower

January 2004 ENGI 242/ELEC 222 30


Emitter Follower

January 2004 ENGI 242/ELEC 222 31


Emitter Follower

January 2004 ENGI 242/ELEC 222 32


Common Base

January 2004 ENGI 242/ELEC 222 33


Common Base

January 2004 ENGI 242/ELEC 222 34

Das könnte Ihnen auch gefallen