basis for separate optimization of the p- type and n-type transistors.
• One can optimize independently for
threshold voltage, body effect, and the gain associated with n- and p-devices. Contd… A. Starting material: an n+ or p+ substrate with lightly doped -> "epitaxial" or "epi" layer -> to protect "latch up" B. Epitaxy" a. Grow high-purity silicon layers of controlled thickness b. With accurately determined dopant concentrations c. Electrical properties are determined by the dopant and its concentration in Si C. Process sequence a. Tub formation b. Thin-Oxide construction c. Source & drain implantations d. Contact cut definition e. Metallization • The main advantage of this process is that the threshold voltage, body effect parameter and the transconductance can be optimized separately. The starting material for this process is p+ substrate with epitaxially grown p-layer which is also called as epilayer. Twin Tub Process: N-well / P-well
First place wells to provide properly-doped
substrate for n-type, p-type transistors: Twin Tub Process: Polysilicon
Pattern polysilicon before diffusion regions:
Twin Tub Process: N+/ P+ Diffusion
Add diffusions, performing self-masking:
Twin Tub Process: Contact / Via / Metal
Start adding metal layers:
Twin-well CMOS process cross section Twin Tub CMOS Process Cross Section ---Struggle gives Strength and Dignity....